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Aminul Islam

Contact Us

Email - aminulislam@bitmesra.ac.in
Phone - +91-7632909146

Only SCI and SCIE Journal Papers

 Entire publication list is here

PUBLICATION BRIEF:

Journal

116

69 in SCI/SCIE (including 19 in IEEE Transactions & 6 IET), 07 in ESCI, 21 in SCOPUS and 19 in other journals

Conference

135

 

Book chapter

43

 

Total publication

294

 

Total impact factor

158.051

 

h-index

≥17

Can be seen from: https://scholar.google.com/citations?hl=en&user=pCdh75UAAAAJ&view_op=list_works&cstart=20

i-10 index

≥34

------do------

Total citation

≥1395

------do------

 

SCI/SCIE papers published in:

IEEE

19

IET

6

Elsevier

8

T & F

2

Wiley

3

IOP publishing Ltd. (Physica Scripta)

1

Springer (AmitSarika, AmitSant, Sudip, Indrajit + 22 in MST)

26

Journal of Semiconductor Technology and Science

1

Indian Journal of Engineering and Materials Sciences

1

Total

67

 

LIST OF PUBLICATIONS

 

JOURNAL

 

Sl.No.

Date

Authors/title with journal name/page nos./vol. /no.  date/year of Publication

ISSN/ ISBN No.

Whether indexed

and indexing agency

Impact factor
  1.  

Sep. 22

Pratik Kumar Singh, Rohit Raj, Vivek Kumar, Monalisa Pandey, Santashraya Prasad and Aminul Islam, “Comparative Analysis and Robustness Study of Logic Styles,” in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems. Publisher: Springer. DOI: https://doi.org/10.1007/s00542-022-05378-6

ISSN:

0946-7076

SCI

2.276
  1.  

Jun. 22

Santashraya Prasad and Aminul Islam, “Characterization of AlInN/GaN Based HEMT for Radiofrequency Applications” in Micro and Nanosystems, vol. 14, May 2018. Publisher: Bentham Science Publishers B.V., DOI:  10.2174/1876402914666220510112625

ISSN: 1876-4037

SCOPUS

0.81
  1.  

Feb. 22

Jyothi Prakash Kotni, Monalisa Pandey, Santrashraya Prasad, and Aminul Islam, “Design of Radiation-Hardened High-Speed 12T-SRAM Cell for Satellite Applications,” in
International Journal of High Speed Electronics and Systems. Publisher: World Scientific Publishing Co. Pte Ltd.

ISSN: 0129-1564

SCOPUS

0.552
  1.  

Oct. 22

Santashraya Prasad, and Aminul Islam, “Y-shaped double-gate high electron mobility transistor for radio frequency applications,” Int. J. Nanoparticles, Vol. 14, No. 2/3/4, pp. 181-201, Oct 2022. Publisher: Inderscience.   DOI:   https://doi.org/10.1504/IJNP.2022.126356

ISSN:

1753-2515

SCOPUS

0.512
  1.  

Aug. 22

Shashank Kumar Dubey, and Aminul Islam, “Impact of gate recessing on DC, RF and noise parameters of 6H-SiC-based Al0.30Ga0.70N/GaN HEMT for RF and low noise applications,” in  Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems.  Publisher: Springer.   DOI:  https://doi.org/10.1007/s00542-022-05362-0

ISSN:

0946-7076

SCIE

2.276
  1.  

Jun. 22

Ravi Teja Yekula, Monalisa Pandey and Aminul Islam, “A Highly Reliable Radiation Tolerant 13T SRAM Cell for Deep Space Applications,” in Microelectronics reliability, vol. 1330, pp. 1–14, Jun. 2022. Publisher: Elsevier, DOI:  https://doi.org/10.1016/j.microrel.2022.114527

ISSN: 0026-2714

SCI

1.589
  1.  

Mar. 22

Soumitra Pal, Subhankar Bose, and A. Islam, “Design of Memristor Based Low Power and Highly Reliable ReRAM Cell,” in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems.  vol. 28, no. 3, pp. 793 - 807, Mar. 2022, Publisher: Springer.   DOI: https://doi.org/10.1007/s00542-019-04582-1   

ISSN:

0946-7076

SCIE

2.276
  1.  

Mar. 22

Soumitra Pal, Subhankar Bose, and A. Islam, “Design of SRAM Cell for Low Power Portable Healthcare Applications,” in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems, vol.  28, no. 3, pp.  833–844, Mar. 2022, Publisher: Springer. DOI: https://doi.org/10.1007/s00542-020-04809-6

ISSN:

0946-7076

SCIE

2.276
  1.  

Feb. 22

Shashank Kumar Dubey, and Aminul Islam, “Al0.30Ga0.70N /GaN MODFET with triple-teeth metal for RF and high-power applications,” in Physica Scripta, vol. 97, No. 3, pp. 034003, Feb. 2022. Publisher: IOP publishing Ltd. DOI:10.1088/1402-4896/ac50c3, url: https://doi.org/10.1088/1402-4896/ac50c3

ISSN: 1402-4896

SCIE

3.08
  1.  

Jan. 22

Shashank Kumar Dubey, Meena Mishra, and Aminul Islam, “Characterization of AlGaN/GaN Based HEMT for Low Noise and High Frequency Application" in International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, vol.  35, no. 1, pp.  1–12, Jan-Feb. 2022, Publisher: Wiley. DOI: https://doi.org/10.1002/jnm.2932

ISSN: 1099-1204

SCIE

1.436
  1.  

Oct. 21

S. Pal, S. Mohapatra, W. -H. Ki and A. Islam, "Soft-Error-Aware Read-Decoupled SRAM With Multi-Node Recovery for Aerospace Applications," in IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 68, no. 10, pp. 3336-3340, Oct. 2021, doi: 10.1109/TCSII.2021.3073947. https://doi.org/10.1109/TCSII.2021.3073947

Print ISSN: 1549-7747

SCIE

3.691
  1.  

Aug. 21

S. Pal, S. Mohapatra, W. -H. Ki and A. Islam, "Soft-Error-Immune Read-Stability-Improved SRAM for Multi-Node Upset Tolerance in Space Applications," in IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 68, no. 8, pp. 3317-3327, Aug. 2021, doi: 10.1109/TCSI.2021.3085516. https://doi.org/10.1109/TCSI.2021.3085516

Print ISSN: 1549-8328

 

SCIE

4.14
  1.  

Jul. 21

S. Pal, D. D. Sri, W. -H. Ki and A. Islam, “Radiation-hardened read-decoupled low-power 12T SRAM for space applications,” in International Journal of Circuit Theory and Applications, vol. 49, pp. 3583–3596, Jul. 2021. Publisher: Wiley. DOI: 10.1002/cta.3093. https://doi.org/10.1002/cta.3093

ISSN: 1097-007X

SCIE

1.444
  1.  

Jun. 21

S. Pal, S. Mohapatra, W. -H. Ki and A. Islam, "Design of Soft-Error-Aware SRAM With Multi-Node Upset Recovery for Aerospace Applications," in IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 68, no. 6, pp. 2470-2480, June 2021, doi: 10.1109/TCSI.2021.3064870.  https://doi.org/10.1109/TCSI.2021.3064870

Print ISSN: 1549-8328

 

SCIE

4.14
  1.  

Jun. 21

S. Pal, D. D. Sri, W. -H. Ki and A. Islam, "Highly Stable Low Power Radiation Hardened Memory-by-Design SRAM for Space Applications," in IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 68, no. 6, pp. 2147-2151, June 2021, doi: 10.1109/TCSII.2020.3042520. https://doi.org/10.1109/TCSII.2020.3042520

Print ISSN: 1549-7747

SCIE

3.691
  1.  

May 21

S. Pal, D. D. Sri, W. -H. Ki and A. Islam, "Soft-Error Resilient Read Decoupled SRAM With Multi-Node Upset Recovery for Space Applications," in IEEE Transactions on Electron Devices, vol. 68, no. 5, pp. 2246-2254, May 2021, doi: 10.1109/TED.2021.3061642, https://doi.org/10.1109/TED.2021.3061642

ISSN: 0018-9383

SCIE

3.221
  1.  

May 21

Chandramauleshwar Roy, Aminul Islam, “Design of low power, variation tolerant single bitline 9T SRAM cell in 16-nm technology in subthreshold region,” in Microelectronics reliability, vol. 120, pp. 1–12, May 2021. Publisher: Elsevier, DOI:  https://doi.org/10.1016/j.microrel.2021.114126

ISSN: 0026-2714

SCIE

1.589
  1.  

Feb. 21

Soumitra Pal, Vivek Gupta, Aminul Islam, “Variation resilient low-power memristor-based synchronous flip-flops: design and analysis” in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems, vol. 27, no. 2, pp. 525-538, Feb. 2021, Publisher: Springer. DOI:   https://doi.org/10.1007/s00542-018-4044-6 Vol & No. is here:  https://link.springer.com/journal/542/volumes-and-issues/27-2

ISSN: 

0946-7076

SCIE

2.276
  1.  

Oct. 20

Chandramauleshwar Roy, Aminul Islam, “Design of differential TG based 8T SRAM cell for ultralow-power applications” in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems, vol. 26, no. 10, pp.   3299 - 3310, Oct 2020, DOI: 10.1007/s00542-017-3570-y, Publisher: Springer. https://link.springer.com/article/10.1007/s00542-018-4035-7

ISSN:

0946-7076

SCIE

2.276
  1.  

Oct. 20

Aminul Islam, N. S. Ranjan, Amit Krishna Dwivedi, “Compact design of an MTJ-based non-volatile CAM cell with read/write operations,” in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems, vol. 26, no. 10, pp.   3259 - 3270, Oct. 2020, Publisher: Springer. DOI:  https://doi.org/10.1007/s00542-018-4008-x

ISSN: 

0946-7076

SCIE

2.276
  1.  

Oct. 20

Vikash Kumar and Aminul Islam, “Study of Variability Performance of CMOS Active Inductors,” in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems, vol. 26, no. 10, pp.  3101 - 3111, Oct. 2020. Publisher: Springer, DOI:   https://doi.org/10.1007/s00542-017-3693-1

ISSN:

0946-7076

SCIE

2.276
  1.  

Sep. 20

Amresh Kumar, Amit Krishna Dwivedi and Aminul Islam, “Variation resilient reliable design of trigger pulse generator,” in in IET Circuits, Devices & Systems, vol. 14, no. 6, pp.  860-868, Sep. 2020. Publisher: IET. https://onlinelibrary.wiley.com/doi/10.1049/iet-cds.2019.0362

ISSN: 1751-858X

SCIE

1.395
  1.  

Jul. 20

Indrajit Pal, Vikash Kumar, Nilay Aishwarya, Abhijeet Nayak, Aminul Islam, “A VDTA-based robust electronically tunable memristor emulator circuit,” in Analog Integrated Circuits and Signal Processing, vol. 99, no. 1, pp. 95–109, Jul. 2020. Publisher: Springer, DOI: https://doi.org/10.1007/s10470-019-01575-y

ISSN: 0925-1030

SCIE

0.823
  1.  

Jul. 20

S. Pal, S. Bose, and A. Islam, “A low power SRAM cell design for wireless sensor network applications,” in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems, vol. 26, no. 7, pp. 2325 – 2335, Jul. 2020, Publisher: Springer. DOI:    https://doi.org/10.1007/s00542-019-04708-5

ISSN:

0946-7076

SCIE

2.276
  1.  

Jul. 20

Nilay Aishwarya, Abhijeet Nayak, Indrajit Pal, Vikash Kumar, Aminul Islam, “A novel CNFET based tunable memristor emulator,” in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems.  vol. 26, no. 7, pp. 2173 – 2181, Jul. 2020, DOI: 10.1007/s00542-019-04486-0, Publisher: Springer.  https://doi.org/10.1007/s00542-019-04486-0

ISSN:

0946-7076

SCIE

2.276
  1.  

Jul. 20

Shashank Kumar Dubey, Krishnpriya Sinha, Pawan Kumar Sahu, Ritesh Ranjan, Atandra Pal and Aminul Islam, “Characterization of InP-based pseudomorphic HEMT with T-gate,” in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems.  vol. 26, no. 7, pp. 2183 – 2191, Jul. 2020, DOI: 10.1007/s00542-019-04491-3, Publisher: Springer.  https://doi.org/10.1007/s00542-019-04491-3

ISSN:

0946-7076

SCIE

2.276
  1.  

Jul. 20

Krishnpriya Sinha, Shashank Kumar Dubey, Aminul Islam, “Study of high Al fraction in AlGaN barrier HEMT and GaN and InGaN channel HEMT with In0.17Al0.83N barrier,” in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems.  vol. 26, no. 7, pp. 2145 – 2158, Jul. 2020, DOI: 10.1007/s00542-019-04466-4, Publisher: Springer.  https://doi.org/10.1007/s00542-019-04466-4

ISSN:

0946-7076

SCIE

2.276
  1.  

May 20

Shubham Kumar, Satyam Saraiyan, Shashank Kumar Dubey, S. Pal, Aminul Islam, “A 2.4 GHz Double Balanced Downconversion Mixer with Improved Conversion Gain in 180-nm Technology nversion Mixer with Improved Conversion Gain in 180-nm Technology,”  in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems, vol. 26, no. 5, pp. 1721–1731, May 2020, Publisher: Springer. DOI:    https://doi.org/10.1007/s00542-019-04718-3  

ISSN:

0946-7076

SCIE

2.276
  1.  

May 20

Chandramauleshwar Roy, Aminul Islam, “Characterization of Single-Ended 9T SRAM Cell,” in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems, vol. 26, no. 5, pp. 1591–1604, May. 2020, Publisher: Springer. DOI:   https://doi.org/10.1007/s00542-019-04700-z

ISSN:

0946-7076

SCIE

2.276
  1.  

Apr. 20

Shashank Kumar Dubey, Aminul Islam, “Design of Resistive Random Access Memory Cell and Its Architecture,” in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems, vol. 26, no. 4, pp. 1325−1332, Apr. 2020, Publisher: Springer. DOI:   https://doi.org/10.1007/s00542-019-04663-1

ISSN:

0946-7076

SCIE

2.276
  1.  

Mar. 20

Shashank Kumar Dubey, A. Reddy, Rashi Patel, Master Abz, Avireni Srinivasulu, Aminul Islam, “Architecture of resistive RAM with write driver,” in Solid State Electronics Letters, vol. 2, pp. 10-22, Mar. 2020, Publisher: KeAi. DOI: https://doi.org/10.1016/j.ssel.2020.01.001  

ISSN: 2589-2088

INSPEC

 

0
  1.  

Mar. 20

S. Pal, S. Bose, W. Ki and A. Islam, “A Reliable Write Assist Low Power SRAM Cell for Wireless Sensor Network Applications,” in IET Circuits, Devices & Systems, vol. 14, no. 2, pp.  137-147, Mar. 2020. Publisher: IET. https://onlinelibrary.wiley.com/doi/abs/10.1049/iet-cds.2019.0050

ISSN: 1751-858X

SCIE

1.395
  1.  

Feb. 20

S. Pal, S. Bose, W. Ki and A. Islam, "A Highly Stable Reliable SRAM Cell Design for Low Power Applications," in Microelectronics reliability, vol. 105, pp. 1-11, Feb. 2020. Publisher: Elsevier, DOI:  https://doi.org/10.1016/j.microrel.2019.113503

ISSN: 0026-2714

SCIE

1.589
  1.  

Jan. 20

S. Pal, S. Bose, W. Ki and A. Islam, “Half-Select Free Low Power Dynamic Loop-Cutting Write Assist SRAM Cell for Space Applications,” in IEEE Transactions on Electron Devices, vol. 67, no. 1, pp. 80-89, Jan. 2020. doi: https://doi.org/10.1109/TED.2019.2952397 

ISSN: 0018-9383

SCIE

3.221
  1.  

Nov. 19

S. Pal, S. Bose, W. Ki and A. Islam, "Characterization of Half-select Free Write Assist 9T SRAM Cell," in IEEE Transactions on Electron Devices, vol. 66, no. 11, pp. 4745-4752, Nov. 2019. doi: 10.1109/TED.2019.2942493, https://doi.org/10.1109/TED.2019.2942493

ISSN: 0018-9383

SCIE

3.221
  1.  

Aug. 19

Soumitra Pal, Vivek Gupta and A. Islam, "A Transmission Gate Based 9T SRAM cell For Variation Resilient Low Power and Reliable Internet of Things Applications," in IET Circuits, Devices & Systems, vol. 13, no. 5, pp. 584-595, Aug. 2019. Publisher: IET.  https://onlinelibrary.wiley.com/doi/10.1049/iet-cds.2018.5283

ISSN: 1751-858X

SCIE

1.395
  1.  

Jul. 19

S. Pal, S. Bose, W. Ki and A. Islam, "Design of Power-and Variability-Aware Nonvolatile RRAM Cell Using Memristor as a Memory Element," in IEEE Journal of the Electron Devices Society, vol. 7, no. 1, pp. 701-709, Jul. 2019. doi: 10.1109/JEDS.2019.2928830, https://doi.org/10.1109/JEDS.2019.2928830

Online ISSN: 2168-6734

SCIE

2.696
  1.  

Jul. 19

Soumitra Pal, Vivek Gupta, Wing Hung Ki and A. Islam, "Design and Development of Memristor-Based RRAM," in IET Circuits, Devices & Systems, vol. 13, no. 4, pp.  548-557, Jul. 2019. Publisher: IET.   https://onlinelibrary.wiley.com/doi/10.1049/iet-cds.2018.5388#:~:text=A%20power%E2%80%90%20and%20variability%E2%80%90aware,tremendous%20robustness%20against%20process%20variation

ISSN: 1751-858X

SCIE

1.395
  1.  

May 19

Vikash Kumar,  Rishab Mehra, Aminul Islam, " A CMOS active inductor based digital and analog dual tuned voltage-controlled oscillator," in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems, vol. 25, no. 5, pp.  1571–1583 , May 2019. DOI  10.1007/s00542-017-3457-y, Publisher: Springer.

http://www.springer.com/-/4/AVxwDRPGlsZN9k3Li7zk

ISSN: 0946-7076

SCIE

2.276
  1.  

May 19

Manisha Guduri, Amit Krishna Dwivedi, Sananya Majumder, Riya, and Aminul Islam, “An efficient circuit-level power reduction technique for ultralow power applications,” in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems, vol. 25, no. 5, pp. 1689–1697, May 2019. DOI: 10.1007/s00542-018-4103-z, Publisher: Springer. https://doi.org/10.1007/s00542-018-4103-z

ISSN:

0946-7076

SCIE

2.276
  1.  

May 19

Chandramauleshwar Roy, Aminul Islam, “Power-aware sourse feedback single-ended 7T SRAM cell at nanoscale regime,” in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems, vol. 25, no. 5, pp.  1783–1791, May 2019. DOI: 10.1007/s00542-017-3570-y, Publisher: Springer.  https://doi.org/10.1007/s00542-017-3570-y  

ISSN:

0946-7076

SCIE

2.276
  1.  

May 19

Manisha Guduri Vishesh Dokania, Richa Verma, and Aminul Islam, “Minimum Energy Solution for Ultra-Low Power Applications,” in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems, vol. 25, no. 5, pp. 1823–1831, May 2019. DOI: 10.1007/s00542-018-3785-6, Publisher: Springer. https://link.springer.com/article/10.1007%2Fs00542-018-3785-6

ISSN: 

0946-7076

SCIE

2.276
  1.  

May 19

Rishab Mehra, Aminul Islam, “A Low Power, Temperature Compensated, Robust Design of CS Amplifier in Nanoscale Regime,” in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems,  vol. 25, no. 5, pp. 1841–1852, May 2019, Publisher: Springer. DOI:  https://doi.org/10.1007/s00542-018-3851-0

ISSN: 

0946-7076

SCIE

2.276
  1.  

May 19

Anumita Sengupta, Aminul Islam, “Comparative analysis of AlGaN/GaN high electron mobility transistor with sapphire and 4H-SiC substrate,” in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems,  vol. 25, no. 5, pp. 1927–1935, May 2019, Publisher: Springer. DOI:  https://doi.org/10.1007/s00542-018-3903-5

ISSN: 

0946-7076

SCIE

2.276
  1.  

Apr. 19

Sudip Kundu, Siddhartha Sarkar, Pradip Mandal, Aminul Islam, “Modeling and Sizing of Non-linear CMOS Analog Circuits used in Mixed Signal Systems,” in Analog Integrated Circuits and Signal Processing, vol. 99, no. 1, pp. 95–109, Apr. 2019. Publisher: Springer, DOI: https://doi.org/10.1007/s10470-018-1310-6

ISSN: 0925-1030

SCI

0.823
  1.  

Apr. 19

Soumitra Pal, Vivek Gupta, Aminul Islam, “Design of CNFET based power- and variability-aware nonvolatile RRAM cell,” Microelectronics Journal vol. 86, pp. 7–14, Apr. 2019. Publisher: Elsevier, https://doi.org/10.1016/j.mejo.2019.02.009

ISSN: 0026-2692

SCIE

1.322
  1.  

Oct. 18

Vikash Kumar, Rishab Mehra, A. Islam, "Design and Analysis of MISO Bi-quad Active Filter," in International Journal of Electronics, vol. 106, no. 2, pp. 287 - 304, Oct. 2018. Publisher: Taylor & Francis, DOI:  https://doi.org/10.1080/00207217.2018.1525769, https://www.tandfonline.com/doi/full/10.1080/00207217.2018.1525769

Print ISSN: 0020-7217

SCIE

0.939
  1.  

Sep. 18

R. Mehra, V. Kumar and A. Islam, "Reliable and Q-Enhanced Floating Active Inductors and Their Application in RF Bandpass Filters," in IEEE Access, vol. 6, pp. 48181-48194, Sep. 2018. doi: 10.1109/ACCESS.2018.2868181,  https://doi.org/10.1109/ACCESS.2018.2868181

Print ISSN: 2169-3536

SCIE

3.476
  1.  

Jun. 18

Indrajit Pal, Aminul Islam, “Circuit-Level Technique to Design Variation- and Noise-Aware Reliable Dynamic Logic Gates,” in IEEE Transactions on Device and Materials Reliability,  vol. 18, no. 2, pp. 224-239, Jun. 2018.  DOI:  10.1109/TDMR.2018.2819019,  https://doi.org/10.1109/TDMR.2018.2819019

ISSN: 1530-4388

SCIE

1.886
  1.  

Apr. 18

Amit Krishna Dwivedi, Sarika Tyagi, Aminul Islam, “Compact versatile noise suppressed programmable trigger pulse generator for Industrial applications,” National Academy Science Letters, vol. 41, no. 2, pp. 97-101, Apr. 2018. Publisher: Springer, DOI:  https://doi.org/10.1007/s40009-018-0626-1

ISSN:  0250-541X

SCIE

0.519
  1.  

Feb. 18

D. Bharti and A. Islam, "Optimization of SiC UMOSFET Structure for Improvement of Breakdown Voltage and ON-Resistance," in IEEE Transactions on Electron Devices, vol. 65, no. 2, pp. 615-621, Feb. 2018.
doi: 10.1109/TED.2017.2779482, https://doi.org/10.1109/TED.2017.2779482

ISSN: 0018-9383

SCIE

3.221
  1.  

Jan. 18

Vikash Kumar and Aminul Islam, “Performance Analysis of Two Novel CMOS Active Grounded and Floating Inductors Suitable for RF Bandpass Filter Applications” in Recent Advances in Electrical & Electronic Engineering, vol. 11, no. 4, pp. 487 – 498, 2018. Publisher: Bentham Science,  https://doi.org/10.2174/2352096511666180116155417

ISSN: 2352-0965

 

ESCI

Unpaid SCOPUS

0
  1.  

Jan. 18

Rishab Mehra, Vikash Kumar, Aminul Islam, “Floating active inductor based Class-C VCO with 8 digitally tuned sub-bands,” in International Journal of Electronics and Communications (AEÜ), vol. 83, pp. 1-10, Jan. 2018, Publisher: Elsevier, DOI:  https://doi.org/10.1016/j.aeue.2017.08.018

ISSN:  1434-8411

SCIE

2.115
  1.  

Dec. 17

Vishesh Dokania, Richa Verma,  Manisha Guduri, Aminul Islam, “Design of 10T Full Adder Cell for Ultralow-Power Applications,” in Ain Shams Engineering Journal, vol. 9, no. 4, pp. 2363-2372, Dec. 2018, Publisher: Elsevier, DOI:  https://doi.org/10.1016/j.asej.2017.05.004

ISSN: 2090-4479

SCIE

 

 

0.589
  1.  

Sep. 17

Anubhav Sinha, Aminul Islam, "Low-Power Half-Select Free Single-Ended 10 Transistor SRAM Cell," in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems, vol. 23, no. 9, pp. 4133–4144, Sep. 2017, DOI: 10.1007/s00542-016-3032-y, Publisher: Springer.

http://link.springer.com/article/10.1007/s00542-016-3032-y

ISSN: 

0946-7076

SCIE

2.276
  1.  

Sep. 17

Amresh Kumar, Aminul Islam, "Multi-Gate Device and Summing-Circuit Co-design Robustness Studies @ 32-nm Technology Node," in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems, vol. 23, no. 9, pp. 4099–4109, Sep. 2017. DOI 10.1007/s00542-016-3055-4, Publisher: Springer. http://link.springer.com/article/10.1007/s00542-016-3055-4

ISSN: 

0946-7076

SCIE

2.276
  1.  

Sep. 17

Manisha Guduri, Rishab Mehra, Pragya Srivastava, Aminul Islam, "Current-Mode Circuit-Level Technique to Design Variation-Aware Nanoscale Summing Circuit for Ultra-Low Power Applications," in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems, vol. 23, no. 9, pp. 4045–4056, Sep. 2017. Publisher: Springer, http://link.springer.com/article/10.1007/s00542-016-2994-0 

ISSN:

 0946-7076

SCIE

2.276
  1.  

Jun. 17

Chandramauleshwar Roy, Arundhati Bhattacharya, Aminul Islam, "Modeling of MTJ and its validation using nanoscale MRAM bitcell," in Journal of Engineering Science and Technology, vol. 12, no. 6, pp. 1525 – 1540, Jun. 2017. Publisher: Taylor’s University, http://jestec.taylors.edu.my/V12Issue6.htm

ISSN: 1823-4690

ESCI

Unpaid SCOPUS

0.37
  1.  

May 17

Rishab Mehra, Vikash Kumar, Aminul Islam, and Brajesh Kumar Kaushik, “Variation-Aware Nanoscale Design of CMOS Active Inductor Based RF Bandpass Filter,” in International Journal of Circuit Theory and Applications, vol. 45, no. 12, pp. 2181-2200, May 2017. Publisher: Wiley. doi: 10.1002/cta.2364. https://doi.org/10.1002/cta.2364,

http://onlinelibrary.wiley.com/doi/10.1002/cta.2364/full

ISSN: 1097-007X

SCIE

1.444
  1.  

Apr. 17

Manisha Guduri, Aminul Islam, “Novel Pass-Transistor Logic Based Ultralow Power Variation Resilient CMOS Full Adder,” in Journal of Semiconductor Technology and Science, vol. 17, no. 2, pp. 302 – 317, Apr. 2017, DOI: https://doi.org/10.5573/JSTS.2017.17.2.302, http://www.jsts.org/html/main.htm,    http://www.jsts.org/html/journal/journal_files/2017/04/Year2017Volume17_02_22.pdf

ISSN:  1598-1657

SCIE

0.374
  1.  

Mar. 17

Vikash Kumar, Rishab Mehra, Aminul Islam, “A 2.5GHz Low Power, High-Q, Reliable Design of Active Bandpass Filter,” in IEEE Transactions on Device and Materials Reliability, vol. 17, no. 1, pp. 229-244, Mar. 2017. DOI: 10.1109/TDMR.2017.2652142, https://doi.org/10.1109/TDMR.2017.2652142

ISSN: 1530-4388

SCIE

1.886
  1.  

Nov. 16

Swapnil Sourav, Rishab Mehra, Aminul Islam, "Robust Design of Differential Amplifier with Diode-Connected Voltage Reference," in Indian Journal of Science and Technology, vol. 9, no. 44, pp. 1-7, Nov. 2016. DOI  10.17485/ijst/2016/v9i44/105278, Publisher: Indian Society for Education and Environment. http://www.indjst.org/index.php/indjst/article/view/105278  

ISSN: 0974-6846. 
0974-5645

SCOPUS

0.86
  1.  

Nov. 16

Swapnil Sourav, Aminul Islam, "Robustness Study and Comparison Between P-channel and N-channel Input Single-Stage OTA," in Indian Journal of Science and Technology, vol. 9, no. 44, pp. 1-6, Nov. 2016. DOI   10.17485/ijst/2016/v9i44/105277, Publisher: Indian Society for Education and Environment. http://www.indjst.org/index.php/indjst/article/view/105277

ISSN: 0974-6846. 
0974-5645

SCOPUS

0.86
  1.  

Nov. 16

Sarita Kumari, Rishab Mehra, Aminul Islam, "Impact of Process Variations on Open Circuit Voltage Gain of CMOS Inverting Amplifiers," in Indian Journal of Science and Technology, vol. 9, no. 44, pp. 1-8, Nov. 2016. DOI: 10.17485/ijst/2016/v9i44/105274, Publisher: Indian Society for Education and Environment.  http://www.indjst.org/index.php/indjst/article/view/105274

ISSN: 0974-6846. 
0974-5645

SCOPUS

0.86
  1.  

Nov. 16

Vikash Kumar, Prashant Gupta, Shashank Kumar Ranu, Manish Kumar Pandey, Aminul Islam, "Design of Reversible Number Generator using Finite State Automaton Realization," in Indian Journal of Science and Technology, vol. 9, no. 44, pp. 1-5, Nov. 2016. DOI: 10.17485/ijst/2016/v9i44/99518, Publisher: Indian Society for Education and Environment.  http://www.indjst.org/index.php/indjst/article/view/99518

ISSN: 0974-6846. 
0974-5645

SCOPUS

0.86
  1.  

Nov. 16

Vikash Kumar, Manish Kumar Pandey, Shashank Kumar Ranu, Prashant Gupta, Aminul Islam, "A New Robust and Reliable Sub-threshold XOR Circuit with Full Output Swing," in Indian Journal of Science and Technology, vol. 9, no. 44, pp. 1-6, Nov. 2016. DOI: 10.17485/ijst/2016/v9i44/99517, Publisher: Indian Society for Education and Environment.  http://www.indjst.org/index.php/indjst/article/view/99517

ISSN: 0974-6846. 
0974-5645

SCOPUS

0.86
  1.  

Nov. 16

Vikash Kumar, Yashdeep Singh, Ravi Kumar Prinshu, Aminul Islam, "Low Voltage Charge Pump for RF Energy Harvesting Applications," in Indian Journal of Science and Technology, vol. 9, no. 44, pp. 1-5, Nov. 2016. DOI: 10.17485/ijst/2016/v9i44/99512, Publisher: Indian Society for Education and Environment.  http://www.indjst.org/index.php/indjst/article/view/99512

ISSN: 0974-6846. 
0974-5645

SCOPUS

0.86
  1.  

Oct. 16

Soumitra Pal, Aminul Islam, "Low Power and High Variation Tolerant 9T-SRAM cell at 16-nm Technology Node," in Indian Journal of Science and Technology, vol. 9, no. 40, pp. 1-7, Oct. 2016. DOI: 10.17485/ijst/2016/v9i40/99586, Publisher: Indian Society for Education and Environment.  http://www.indjst.org/index.php/indjst/article/view/99586

ISSN: 0974-6846. 
0974-5645

SCOPUS

0.86
  1.  

Oct. 16

Manisha Guduri, Aminul Islam, "Analysis of XOR Circuits for Ultralow-Power Applications in Deep Subthreshold Region," in Indian Journal of Science and Technology, vol. 9, no. 40, pp. 1-6, Oct. 2016. DOI: 10.17485/ijst/2016/v9i40/99510, Publisher: Indian Society for Education and Environment.  http://www.indjst.org/index.php/indjst/article/view/99510

ISSN: 0974-6846. 
0974-5645

SCOPUS

0.86
  1.  

Oct. 16

V. Karthik Reddy, Manisha Guduri, N Lakshmi Dheshik Reddy, Peddi Dharani, Santashraya Prasad, A. Islam, "Threshold Voltage Extraction of 220 nm FDSOI Device Using Linear Extrapolation Method," in Indian Journal of Science and Technology, vol. 9, no. 40, pp. 1-4, Oct. 2016. DOI: 10.17485/ijst/2016/v9i40/99511, Publisher: Indian Society for Education and Environment.  http://www.indjst.org/index.php/indjst/article/view/99511

ISSN: 0974-6846. 
0974-5645

SCOPUS

0.86
  1.  

Oct. 16

Chandramauleshwar Roy, Aminul Islam, "Design of 10T SRAM Cell using Column-Line Assist and DTMOS Techniques," in Indian Journal of Science and Technology, vol. 9, no. 40, pp. 1-6, Oct. 2016. DOI: 10.17485/ijst/2016/v9i40/99509, Publisher: Indian Society for Education and Environment.  http://www.indjst.org/index.php/indjst/article/view/99509

ISSN: 0974-6846. 
0974-5645

SCOPUS

0.86
  1.  

Sep. 16

Manisha Guduri, Amit Krishna Dwivedi, Aminul Islam, "High Vt-Low Leakage FDSOI Device for Ultra-Low Power Operation," in Indian Journal of Science and Technology, vol. 9, no. 33, pp. 1-5, Sep. 2016. DOI: 10.17485/ijst/2016/v9i33/99516, Publisher: Indian Society for Education and Environment. http://www.indjst.org/index.php/indjst/article/view/99516

ISSN: 0974-6846. 
0974-5645

SCOPUS

0.86
  1.  

Sep. 16

Chandramauleswar Roy, Aminul Islam, "TG Based 2T2M RRAM Using Memristor as Memory Element," in Indian Journal of Science and Technology, vol. 9, no. 33, pp. 1-5, Sep. 2016. DOI: 10.17485/ijst/2016/v9i33/99508, Publisher: Indian Society for Education and Environment.  http://www.indjst.org/index.php/indjst/article/view/99508

ISSN: 0974-6846. 
0974-5645

SCOPUS

0.86
  1.  

Sep. 16

Shrey Khanna, Debosmit Majumder, Vikash Kumar, Santashraya Prasad, Aminul Islam, "Impact of Temperature Variation on Resonant Frequency of Active Grounded Inductor-Based Bandpass Filter,” in Indian Journal of Science and Technology, vol. 9, no. 33, pp. 1-4, Sep. 2016. DOI: 10.17485/ijst/2016/v9i33/99505, Publisher: Indian Society for Education and Environment.  http://www.indjst.org/index.php/indjst/article/view/99505

ISSN: 0974-6846. 
0974-5645

SCOPUS

0.86
  1.  

Aug. 16

V. Dokania, A. Islam, V. Dixit and S. P. Tiwari, "Analytical Modeling of Wrap-Gate Carbon Nanotube FET With Parasitic Capacitances and Density of States," in IEEE Transactions on Electron Devices, vol. 63, no. 8, pp. 3314-3319, Aug. 2016. DOI:10.1109/TED.2016.2581119,   http://dx.doi.org/10.1109/TED.2016.2581119

ISSN: 0018-9383

SCIE

2.62
  1.  

Jul. 16

Swapnil Sourav, Amit Krishna Dwivedi, Aminul Islam, “Investigating Phase Transform Behavior in Indium Selenide Based RAM and Its Validation as a Memory Element,” in Journal of Materials, vol. 2016 (2016), Article ID 6123268, pp. 1-7, DOI: http://dx.doi.org/10.1155/2016/6123268

-

Google Scholar

0.0
  1.  

Jun. 16

S. Pal and A. Islam, "9-T SRAM Cell for Reliable Ultralow-Power Applications and Solving Multibit Soft-Error Issue," in IEEE Transactions on Device and Materials Reliability, vol. 16, no. 2, pp. 172-182, June 2016. doi: 10.1109/TDMR.2016.2544780, https://doi.org/10.1109/TDMR.2016.2544780

ISSN: 1530-4388

SCIE

1.886
  1.  

Apr. 16

S. Pal and A. Islam, "Variation Tolerant Differential 8T SRAM Cell for Ultralow Power Applications," in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. 35, no. 4, pp. 549-558, April 2016. doi: 10.1109/TCAD.2015.2474408, https://doi.org/10.1109/TCAD.2015.2474408

ISSN: 

0278-0070

SCIE

2.089
  1.  

Mar. 16

Manisha Guduri, Shruti Agrawal, Vikash Kumar, Aminul Islam, "Study of FinFET Based Circuit for Ultra-Low Power Operation," in Communications on Applied Electronics (CAE) Journal   Published by Foundation of Computer Science, New York, USA, Series: CCSN2015, No. 1, pp. 25–28, Mar. 2016.  http://www.caeaccess.org/proceedings/ccsn2015/number1/554-1529

ISSN: 2394-4714

Google Scholar and CiteSeer

0
  1.  

Mar. 16

A. K. Dwivedi and A. Islam, "Design of magnetic tunnel junction-based tunable spin torque oscillator at nanoscale regime," in IET Circuits, Devices & Systems, vol. 10, no. 2, pp. 121-129,  3 2016.
doi: 10.1049/iet-cds.2015.0104, https://ietresearch.onlinelibrary.wiley.com/doi/epdf/10.1049/iet-cds.2015.0104

ISSN: 1751-858X

SCIE

1.395
  1.  

Mar 16

Santashraya Prasad, Amit Krishna Dwivedi, Aminul Islam, "Characterization of AlGaN/GaN and AlGaN/AlN/GaN HEMTs in Terms of Mobility and Subthreshold Slope," in Journal of Computational Electronics, vol. 15, no. 1, pp. 172-180, Mar. 2016, Publisher: Springer US. DOI: 10.1007/s10825-015-0751-8, http://link.springer.com/article/10.1007%2Fs10825-015-0751-8#/page-1

ISSN: 1569-8025

SCIE

1.431
  1.  

Dec. 15

Amit Krishna Dwivedi, A. Islam, “Nonvolatile and robust design of content addressable memory cell using magnetic tunnel junction at nanoscale regime,” in IEEE Transactions on Magnetics, vol. 51, no. 12, 17 Dec. 2015, article no.  3402013, DOI:  10.1109/TMAG.2015.2454477, http://dx.doi.org/10.1109/TMAG.2015.2454477  

ISSN: 0018-9464

SCIE

1.467
  1.  

Jul. 15

Arko Mukherjee, Abhijeet Pasumarthy, Aminul Islam, “Design of MEMS Single Pole Double Throw Switch based on PZT,” in International Journal of Scientific and Engineering Research, vol. 6, No. 7, pp. 248 – 251, Jul. 2015. http://www.ijser.org/research-paper-publishing-july-2015_page2.aspx,

ISSN: 2229-5518

DOJ, Google Scholar etc.

0
  1.  

Jul. 15

A. Tyagi, C. Gopi, P. Baldi and A. Islam, "CNFET-Based 0.1- to 1.2-V DC/DC Boost Converter with Voltage Regulation for Energy Harvesting Applications," in IEEE Transactions on Nanotechnology, vol. 14, no. 4, pp. 660-667, July 2015, DOI: 10.1109/TNANO.2015.2427292, http://dx.doi.org/10.1109/TNANO.2015.2427292

ISSN: 1536-125X

SCIE

2.857
  1.  

Jun. 15

Manisha Guduri, A. Islam, “Design of 4×4 Wallace Tree Multiplier for Ultralow Power Applications with Hybrid Compressors” in International Journal of Applied Engineering Research, vol. 10, no. 55, pp. 3584–3589, Jun. 2015, Publisher: Research India Publications. http://www.ripublication.com/Volume/ijaerv10n55spl.htm

ISSN: 0973-4562

SCOPUS

0
  1.  

Jun. 15

Soumitra Pal, Roshani Nipane, Aminul Islam, “Fully differential 10T SRAM Cell,” in International Journal of Applied Engineering Research, vol. 10, no. 55, pp. 502–506, Jun. 2015, Publisher: Research India Publications. http://www.ripublication.com/Volume/ijaerv10n55spl.htm

ISSN 0973-4562

SCOPUS

0
  1.  

Jun. 15

Soumitra Pal, Shivali Nath, Aminul Islam, “Characterization of Read Decoupled 7T SRAM Cell @ 16-nm Technology Node,” in International Journal of Applied Engineering Research, vol. 10, no. 55, pp. 384–388, Jun. 2015, Publisher: Research India Publications. http://www.ripublication.com/Volume/ijaerv10n55spl.htm

ISSN: 0973-4562

SCOPUS

0
  1.  

Jun. 15

Pragya Srivastava, A. Islam, "CNFET-based design of resilient MCML XOR/XNOR circuit at 16-nm technology node," in Indian Journal of Engineering and Materials Sciences (IJEMS), vol. 22, no. 3, pp. 261 – 267, Jun. 2015. Publisher: National Institute of Science Communication and Information Resources (NISCAIR). http://nopr.niscair.res.in/handle/123456789/31744

ISSN:

0971-4588

SCIE

0.543
  1.  

May 15

Soumitra Pal, Malreddy Shekar Reddy, Aminul Islam, “Variation-Tolerant Sub-threshold SRAM Cell Design Technique,” in ARPN Journal of Engineering and Applied Sciences, vol. 10, no. 8, pp. 3597-3603, May. 2015. Publisher:  Asian Research Publishing Network (ARPN)  http://www.arpnjournals.com/jeas/research_papers/rp_2015/jeas_0515_1969.pdf

ISSN: 1819-6608

SCOPUS

0.38
  1.  

May 15

Amit Krishna Dwivedi, Abhijeet Pasumarthy, Rishab Mehra, Aminul Islam, “Versatile Noise Suppressed Variable Pulse Voltage Controlled Oscillator,” in International Journal of Applied Engineering Research (IJAER), vol. 10, no. 20, pp. 18633-18638, May. 2015. Research India Publications,  http://www.ripublication.com/Volume/ijaerv10n20spl.htm

ISSN: 0973-4562

SCOPUS

0
  1.  

May 15

V. Dokania and A. Islam, "Circuit-level design technique to mitigate impact of process, voltage and temperature variations in complementary metal-oxide semiconductor full adder cells," in IET Circuits, Devices & Systems, vol. 9, no. 3, pp. 204-212, 5 2015. doi: 10.1049/iet-cds.2014.0167, https://ietresearch.onlinelibrary.wiley.com/doi/epdf/10.1049/iet-cds.2014.0167

ISSN: 1751-858X

SCIE

1.395
  1.  

May 15

Manish Kumar Pandey, Shashank Kumar Ranu, Aminul Islam, "A new robust and high-performance subthreshold XOR/XNOR circuit," in Journal of Semiconductor Devices and Circuits, vol. 1, no. 1, pp. 1-10, May 2015.

http://stmjournals.com/tech/index.php?journal=JoSDC&page=article&op=view&path%5B%5D=218

ISSN: 2455-3379

Google Scholar, etc.

0
  1.  

Mar. 15

Manisha Guduri, Vivek Kumar Agarwal, A. Islam, "Which is the Best 10T Static CMOS Full Adder for Ultralow-Power Applications?" in Journal of VLSI Design Tools & Technology (JoVDTT), vol. 5. No. 1, pp. 45-50, Mar. 2015.   

http://stmjournals.com/index.php?journal=JoVDTT&page=article&op=view&path%5B%5D=5351

ISSN: 2249-474X

Google Scholar, etc. SJIF 3.035

0
  1.  

Mar. 15

Prashant Gupta, Shashank Kumar Ranu, Manish Kumar Pandey, Aminul Islam, "Hybrid CMOS-SET Inverter Design for Improved Performance Using Tied Body-Backgate Technique," in Journal of VLSI Design Tools & Technology (JoVDTT), vol. 5. No. 1, pp. 24-29, Mar. 2015. http://stmjournals.com/index.php?journal=JoVDTT&page=article&op=view&path%5B%5D=5330

ISSN: 2249-474X, 2321–6492.

Google Scholar, etc. SJIF 3.035.

0
  1.  

Jan. 15

Soumitra Pal, Aminul Islam, “8T Double-Ended Read-Decoupled SRAM Cell,” in International Journal of Computer Applications in Engineering Sciences, vol. 5, no. special issue, pp. 47 – 54, Jan. 2015,

http://www.caesjournals.org/conf-issues.php

ISSN: 2231-4946

DOAJ, Google Scholar, etc.

0
  1.  

Jan. 15

Amit Krishna Dwivedi, Kumar Abhijeet Urma, A. Islam, "Trigger Pulse Generator Using Proposed Buffered Delay Model and its Application,” in Active and Passive Electronic Components, vol. 2015, Article ID 920508, pp. 1-9, Jan 2015. Publisher: Hindawi Publishing Corporation, http://dx.doi.org/10.1155/2015/920508

ISSN:  0882-7516

ESCI

Unpaid SCOPUS

0
  1.  

Aug. 14

Amit Krishna Dwivedi, A. Islam, "Triangular Waveform Generation Using Mixed Signal Modeling," in Journal of VLSI Design Tools & Technology (JoVDTT), vol. 4. No. 2, pp. 8-17, Aug. 2014. Publisher: STM, http://stmjournals.com/index.php?journal=JoVDTT&page=article&op=view&path%5B%5D=4637

ISSN: 2249-474X, 2321–6492

Google Scholar, etc.). SJIF 3.035.

0
  1.  

Jul. 14

A. Bhattacharya, A. Islam, "Implementation of MRAM-Based Full Adder for Sleep Mode Applications," Int. J. of Recent Trends in Engineering and Technology, vol. 11, no. 02, pp. 396–403, Jul. 2014. Publisher: ACEEE.

ISSN: 2158-5563

IET INSPEC, etc.

0
  1.  

Jun. 14

A. Bhattacharya and A. Islam, “Design and Analysis of Robust Spin Transfer Torque Magnetic Random Access Memory Bitcell Using FinFET,” in Journal of Low Power Electronics, vol. 10, no. 2, pp. 220-227, Jun. 2014. Publisher: American Scientific Publishers. DOI: https://doi.org/10.1166/jolpe.2014.1319, http://www.aspbs.com/jolpe/

ISSN: 1546-1998

Unpaid SCOPUS

0
  1.  

Feb. 14

Pragya Srivastava, A. Islam, "Robust and Power-Aware Design of CNFET-Based XOR Circuit at 16-nm Technology Node," in International Journal of Advances in Computer Science and Technology (IJACST), vol. 3, no. 2, pp. 23 – 28, Feb. 2014. http://warse.org/special-issue-iccdie-2014.html

ISSN: 

2320-2602

Google Scholar, etc.

0
  1.  

Jul. 13

Mohd. Ajmal Kafeel, Mohd. Hasan, Mohd. Shah Alam, Aminul Islam, “Performance Evaluation of CNFET Based Single-Ended 6T SRAM Cell,” in Wulfenia, vol. 20, no. 7, pp. 364–383, Jul. 2013. http://www.multidisciplinarywulfenia.org

ISSN: 1561-882X

Google Scholar, etc.

0
  1.  

May 13

A. Islam, “A Technique for Designing Variation Resilient Subthreshold SRAM Cell,” in IIUM Engineering Journal, vol. 14, no. 1, pp. 52–65, May. 2013. http://journals.iium.edu.my/ejournal/index.php/iiumej/issue/view/45

ISSN: 1511-788X

ESCI

Unpaid SCOPUS

0
  1.  

Mar. 13

D. Roy, A. K. Singh, R. Anand, A. Islam, “Bit line and storage node decoupled 13T SRAM cell in 22-nm technology node,” in Wulfenia, vol. 20, no. 3, pp. 40–55, Mar. 2013. http://www.multidisciplinarywulfenia.org

ISSN: 1561-882X

Google Scholar, etc..

0
  1.  

Jan. 13

S. Kushwaha, D. Kumar, M. Saw, A. Islam, “MTJ-Based Nonvolatile 9T SRAM Cell,” in ACEEE Int. J. of Recent Trends in Engineering and Technology, vol. 8, no. 2, pp. 26–30, Jan. 2013. Publisher: ACEEE.

ISSN: 2158-5563

IET INPEC, etc.

0
  1.  

Nov. 12

A. Imran, M. Hasan, A. Islam and S. A. Abbasi, "Optimized Design of a 32-nm CNFET-Based Low-Power Ultrawideband CCII," in IEEE Transactions on Nanotechnology, vol. 11, no. 6, pp. 1100-1109, Nov. 2012. DOI: 10.1109/TNANO.2012.2212248, http://dx.doi.org/10.1109/TNANO.2012.2212248

ISSN: 1536-125X.

SCIE

2.857
  1.  

Sep. 12

A. Islam, Mohd. Hasan, Tughrul Arslan, "Variation Resilient Subthreshold SRAM Cell Design Technique," in International Journal of Electronics, vol. 99, no. 9, pp. 1223-1227, Sep. 2012. Publisher: Taylor & Francis, DOI: 10.1080/00207217.2012.669708, http://dx.doi.org/10.1080/00207217.2012.669708

Print ISSN: 0020-7217

SCIE

0.939
  1.  

Jun. 12

A. Islam. Mohd. Hasan, "Variability Aware Low Leakage Reliable SRAM Cell Design Technique," in Microelectronics reliability, vol. 52, no. 6, pp. 1247 – 1252, Jun. 2012. Publisher: Elsevier, DOI: doi:10.1016/j.microrel.2012.01.003, http://dx.doi.org/10.1016/j.microrel.2012.01.003

ISSN: 0026-2714

SCIE

1.589
  1.  

Mar. 12

A. Islam, Mohd. Hasan, “Leakage characterization of 10T SRAM cell,” in IEEE Transactions on Electron Devices, vol. 59, no. 3, pp. 631 – 638, Mar. 2012. DOI: 10.1109/TED.2011.2181387, http://dx.doi.org/10.1109/TED.2011.2181387

ISSN:  0018-9383

SCIE

3.221
  1.  

Feb. 12

A. Islam and Mohd. Hasan, “A Technique to Mitigate Impact of Process, Voltage and Temperature Variations on Design Metrics of SRAM Cell,” in Microelectronics Reliability, vol. 52, no. 2, pp. 405 – 411, Feb. 2012. Publisher: Elsevier, DOI: doi:10.1016/j.microrel.2011.09.034, http://dx.doi.org/10.1016/j.microrel.2011.09.034

ISSN: 0026-2714

SCIE

1.589
  1.  

Jul. 11

A. Islam, Mohd. Hasan, “Design and Analysis of Power and Variability Aware Digital Summing Circuit,” in Int. J. on Communication, vol. 2, no. 2, pp. 6-14, Jul. 2011.  Publisher: ACEEE.

ISSN: 2158-7558

IET INPEC, etc.

0
  1.  

Jun. 11

Islam, Mohd. Hasan, “Variability Analysis of 6T and 7T SRAM Cell in Sub-45nm Technology,” in IIUM Engineering Journal, vol. 12, no. 1, pp. 13–30, Jun. 2011.

http://journals.iium.edu.my/ejournal/index.php/iiumej/issue/view/23

ISSN: 1511-788X

ESCI

Unpaid SCOPUS

0
  1.  

Mar. 11

A. Islam, M. W. Akram, Mohd. Hasan, “Energy Efficient and Process Tolerant Full Adder in Technologies Beyond CMOS,” in Int. J. of Recent Trends in Engineering and Technology, vol. 05, no. 01, pp. 1–7, Mar. 2011.  Publisher: ACEEE

ISSN: 2158-5563

IET INPEC, etc.

0
  1.  

Feb. 11

A. Islam, Mohd. Hasan, “Dual-Diameter Variation –Immune CNFET-based 7T SRAM Cell,” in Nanosciences and Nanotechnologies: An International Journal (NIJ), vol. 1, no. 1, pp. 1-14, Feb. 2011, Publisher: CSC Journals, Kuala Lumpur Malaysia, http://www.cscjournals.org/library/manuscriptinfo.php?mc=NIJ-3

ISSN: 2180-1304

iSEEK, Google Scholar, etc.),

0
  1.  

Feb. 11

Islam, Mohd. Hasan, “Power optimized variation aware dual-threshold SRAM cell design technique,” in Nanotechnology, Science and Applications, vol. 4, pp. 25 – 33, Feb. 2011. Publisher: Dove Medical Press Limited. DOI: 10.2147/NSA.S15719, http://dx.doi.org/10.2147/NSA.S15719

ISSN: 1177-8903

ESCI

Paid SCOPUS

0
  1.  

Jan. 11

A. Islam, Mohd. Hasan, “Single-Ended 6T SRAM Cell to Improve Dynamic Power Dissipation by Decreasing Activity Factor,” in The Mediterranean Journal of Electronics and Communications, vol. 7, no. 1, pp. 172–181, Jan. 2011.  Publisher: SoftMotor Ltd. http://www.medjec.com/papers%20archive/index.html

ISSN: 1744-2400

IET INSPEC, etc.).

0
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Dec. 10

A. Islam, Mohd. Hasan, “Process Variation and Radiation-Immune Single Ended 6T SRAM Cell,” in Int. J. on Signal & Image Processing, vol. 01, no. 03, pp. 37-45, Dec. 2010, Publisher: ACEEE.

ISSN: 2152-5056

IET INSPEC, etc.

0
  1.  

 

 

 

Total Impact factor

158.051