|
S. No.
|
Name of the Instrument
|
|
1.
|
Raman Spectrometer
|
|
2.
|
Nano indenter
|
|
3.
|
RF sputtering system (for thin film deposition of Carbon, Copper, Aluminium, Titanium, HfC, TiAl)
|
|
4.
|
RF/DC Magnetron Co-Sputtering system
|
|
5.
|
DC Magnetron Sputtering System
|
|
6.
|
Anodic Vacuum Arc (for thin film deposition of Copper, Iron, Nickel, Cobalt, Aluminium)
|
|
7.
|
Thermal CVD system (for the growth of CNT & Graphene)
|
|
8.
|
Nitriding System (only for Nitriding of SS Samples)
|
|
9.
|
DC-PECVD System
|
|
10.
|
RF-PECVD System (only for the deposition of DLC films)
|
|
11.
|
Microwave PECVD System (only for the deposition of NCD and DLC films)
|
|
12.
|
Atmospheric Pressure Plasma Jet
|
|
13.
|
Plasma Torch
|
|
14.
|
Cryogenic Setup (min 10 K)
|
|
15.
|
UV-Vis spectrometer
|
|
16.
|
Ferroelectric Loop Tracer
|
|
17.
|
Ball Milling
|
|
18.
|
Sample Polishing Machine
|
|
19.
|
Workstation
|
|
20.
|
Lock-in Amplifier
|
|
21.
|
Digital Storage Oscilloscope (4 channel)
|
|
22.
|
Source Meter (2 Nos.)
|
|
23.
|
Triple Output Power Supply
|
|
24.
|
Cryogenic Setup
|
|
25.
|
Electromagnet (2 Tesla)
|
|
26.
|
Vacuum Furnace
|
|
27.
|
Box type Furnace (max. 1200 °C)
|
|
28.
|
High Temperature Box Furnace (max. 1700 °C)
|
|
29.
|
High Temperature Box Furnace (max. 1700 °C)
|
|
30.
|
Tube Furnace (max. 1700 °C)
|