• Visiting Professor, Microelectronics Research Center, The University of Texas at Austin, Austin, TX, USA (May 2022 to July 2022).
• Research Associate, Microelectronics Research Center, The University of Texas at Austin, Austin, TX, USA (July 2014 to October 2021).
• Postdoctoral Fellow, Microelectronics Research Center, The University of Texas at Austin, Austin, TX, USA (Feb 2012 to June 2014).
• Research Associate, Dept of Materials Science, Indian Association for the Cultivation of Science, Kolkata, India (Dec 2011 to Feb 2012).
• Visiting Research Fellow, Osaka Electro-Communication University, Japan (Jan 2010 to Feb 2010).
• Ph.D. (Physics), Indian Association for the Cultivation of Science Kolkata, Jadavpur University, Kolkata, & Institute of Physics Bhubaneswar, India (2011).

Surface Physics and Materials Science, Epitaxial Thin Films and Nanostructures, Two-Dimensional Layered Materials

For a full record:

Google Scholar: https://scholar.google.com/citations?user=8XRGQwwAAAAJ&hl=en&oi=ao

ResearchGate: https://www.researchgate.net/profile/Anupam-Roy-9

• Book Chapter

[1] Devices and defects in two-dimensional materials: outlook and perspectives, Amritesh Rai, Anupam Roy, Amithraj Valsaraj, Sayema Chowdhury, Deepyanti Taneja, Yaguo Wang, Leonard Frank Register and Sanjay K Banerjee, Chapter in Book Defects in two-dimensional materials, Editors: Rafik Addou and Luigi Colombo (Elsevier, 2022, ISBN: Print: 9780128202920, eBook: 9780323903103).

[2] Progress in contact, doping and mobility engineering of MoS₂: An atomically thin 2D semiconductor, Amritesh Rai, Hema C P Movva, Anupam Roy, Deepyanti Taneja, Sayema Chowdhury and Sanjay K Banerjee, Chapter in Book Integration of 2D Materials for Electronics Applications, Special Issue Editors: Filippo Giannazzo, Samuel Lara Avila, Jens Eriksson, Sushant Sonde (MDPI, Switzerland, 2019, ISBN: Print: 9783038976066, eBook: 9783038976073).

• Research publications in peer reviewed journals

[1] Ultra-fast switching memristors based on two-dimensional materials, SS Teja Nibhanupudi*, Anupam Roy*, Dmitry Veksler, Matthew Coupin, Kevin C Matthews, Matthew Disiena, Ansh, Jatin V Singh, Ioana R Gearba-Dolocan, Jamie Warner, Jaydeep P Kulkarni, Gennadi Bersuker and Sanjay K Banerjee*, Nat. Commun. 15, 2334 (2024)

[1] Role of hydrogen in suppressing secondary nucleation in chemical vapor-deposited MoS₂, Sayema Chowdhury*, Anupam Roy*, Md Hasibul Alam, Tanmoy Pramanik, Jessica Depoy, Robert Chrostowski, Filippo Mangolini, Deji Akinwande and Sanjay K Banerjee*, ACS Appl. Electron. Mater. 4, 6133-6141 (2022)

[2] Phase-field modeling of chemical vapor-deposited 2D MoS₂ domains with varying morphology for electronic devices and catalytic applications, Anupam Roy*, Tanmoy Pramanik*, Sayema Chowdhury* and Sanjay K Banerjee, ACS Appl. Nano Mater. 5, 15488-15497 (2022)

[3] Wafer-scalable single-layer amorphous molybdenum trioxide, Md Hasibul Alam, Sayema Chowdhury, Anupam Roy, Xiaohan Wu, Ruijing Ge, Michael A Rodder, Jun Chen, Yang Lu, Chen Stern, Lothar Houben, Robert Chrostowski, Scott R Burlison, Sung Jin Yang, Martha I Serna, Ananth Dodabalapur, Filippo Mangolini, Doron Naveh, Jack C Lee, Sanjay K Banerjee, Jamie H Warner and Deji Akinwande, ACS Nano 16, 3756-3767 (2022)

[4] Intermediate Cu-O-Si phase in the Cu-SiO₂/Si(111) system: growth, elemental and electrical studies, Reshmi Sreedharan, Manu Mohan, Sonia Saini, Anupam Roy and K. Bhattacharjee, ACS Omega 6, 23826-23836 (2021)

[5] Recent progresses on measurement of spin-charge interconversion in topological insulators using ferromagnetic resonance (Invited Review), Rik Dey, Anupam Roy, Leonard F Register and Sanjay K Banerjee, APL Materials 9, 060702 (2021)

[6] Direct growth of MoS₂ on electrolytic substrate and realization of high-mobility transistors, Md Hasibul Alam, Sayema Chowdhury, Anupam Roy, Maria Helena Braga, Sanjay K. Banerjee and Deji Akinwande, Phys. Rev. Materials 5, 054003 (2021)

[7] Two-step growth of uniform monolayer MoS₂ nanosheets by metal–organic chemical vapor deposition, Sayema Chowdhury*, Anupam Roy*, Chison Liu, Md Hasibul Alam, Rudresh Ghosh, Harry Chou, Deji Akinwande and Sanjay K. Banerjee*, ACS Omega 6, 10343-10351 (2021)

[8] Inhomogeneous superconductivity in high-density nonmagnetic cobalt in a polycrystalline Co film, Nasrin Banu, M Aslam, Arpita Paul, Sanjib Banik, S Das, S Datta, A Roy, I Das, G Sheet, U V Waghmare, S Ramakrishnan and B N Dev, Europhys. Lett. 131, 47001 (2020)

[9] Stacking Order Driven Optical Properties and Carrier Dynamics in ReS₂, Yongjian Zhou, Nikhilesh Maity, Amritesh Rai, Rinkle Juneja, Xianghai Meng, Anupam Roy, Xiaochuan Xu, Jung-Fu Lin, Sanjay Banerjee, Abhishek K Singh and Yaguo Wang, Adv. Mater. 32, 1908311 (2020)

[10] Two-dimensional to three-dimensional growth of transition metal diselenides by chemical vapor deposition: Interplay between fractal, dendritic and compact morphologies, Sayema Chowdhury*, Anupam Roy*, Isaac Bodemann and Sanjay K. Banerjee*, ACS Appl. Mater. Interfaces 12, 15885-15892 (2020)

[11] Structural and magnetic properties of molecular beam epitaxy grown chromium selenide thin films, Anupam Roy*, Rik Dey, Tanmoy Pramanik, Amritesh Rai, Ryan Schalip, Sarmita Majumder, Samaresh Guchhait and Sanjay K. Banerjee, Phys. Rev. Materials 4, 025001 (2020)

[12] Nonpolar resistive switching of multilayer-hBN-based memories, Pingping Zhuang, Weiyi Lin, Jaehyun Ahn, Massimo Catalano, Harry Chou, Anupam Roy, Manuel Quevedo-Lopez, Luigi Colombo, Weiwei Cai, Sanjay K Banerjee, Adv. Electron. Mater. 6, 1900979 (2019)

[13] Stress-induced bandgap renormalization in atomic crystals, Zheng Sun, Jonathan Beaumariage, Hema C P Movva, Sayema Chowdhury, Anupam Roy, Sanjay K Banerjee and David W Snoke, Solid State Commun. 288, 18-21 (2019)

[14] Growth of lateral graphene/h-BN heterostructure on copper foils by chemical vapor deposition, Pingping Zhuang, Weiyi Lin, Harry Chou, Anupam Roy, Weiwei Cai and Sanjay K Banerjee, Nanotechnology 30, 03LT01 (2019)

[15] Dependence of h-BN film thickness as grown on nickel single crystal substrates of different orientation, Harry Chou, Sarmita Majumder, Anupam Roy, Massimo Catalano, Pingping Zhuang, Manuel Quevedo-Lopez, Luigi Colombo and Sanjay K Banerjee, ACS Appl. Mater. Interfaces 10, 44862-44870 (2018)

[16] Progress in contact, doping and mobility engineering of MoS₂: An atomically thin 2D semiconductor, Amritesh Rai, Hema C P Movva, Anupam Roy, Deepyanti Taneja, Sayema Chowdhury and Sanjay K Banerjee, Crystals 8, 316 (2018) [Invited Review Article]

[17] Accelerated carrier recombination by grain boundary/edge defects in MBE grown transition metal dichalcogenides, Ke Chen, Anupam Roy, Amritesh Rai, Hema C P Movva, Xianghai Meng, Feng He, Sanjay K Banerjee and Yaguo Wang, APL Materials 6, 056103 (2018)

[18] High density nonmagnetic cobalt in thin films, Nasrin Banu, Surendra Singh, Saibal Basu, Anupam Roy, Hema C P Movva, V Lauter, B Satpati and B N Dev, Nanotechnology 29, 195703 (2018)

[19] Carrier trapping by oxygen impurities in molybdenum diselenide, Ke Chen, Anupam Roy, Amritesh Rai, Amithraj Valsaraj, Xianghai Meng, Feng He, Xiaochuan Xu, Leonard F Register, Sanjay Banerjee and Yaguo Wang, ACS Appl. Mater. Interfaces 10, 1125-1131 (2018)

[20] Tailored MoS₂ nanorods: A simple microwave assisted synthesis, S Reshmi, M V Akshaya, Biswarup Satpati, Anupam Roy, Palash Kumar Basu and K Bhattacharjee, Mater. Res. Express 4, 115012 (2017)

[21] Versatile large-area custom-feature van der Waals epitaxy of topological insulators, Tanuj Trivedi, Anupam Roy, Hema C P Movva, Emily S Walker, Seth R Bank, Dean P Neikirk and Sanjay K Banerjee, ACS Nano 11, 7457-7467 (2017)

[22] Short-term relaxation in HfO_x/CeO_x resistive random access memory with selector, Cheng-Chih Hsieh, Yao-Feng Chang, Yoocharn Jeon, Anupam Roy, Davood Shahrjerdi and Sanjay K Banerjee, IEEE Electron Device Letters 38, 871-874 (2017)

[23] Experimental evidence of exciton capture by mid-gap defects in CVD grown monolayer MoSe₂, Ke Chen, Rudresh Ghosh, Xianghai Meng, Anupam Roy, Joon-Seok Kim, Feng He, Sarah Mason, Xiaochuan Xu, Jung-Fu Lin, Deji Akinwande, Sanjay Banerjee and Yaguo Wang, npj 2D Mater. Appl. 1, 15 (2017)

[24] Intra-domain periodic defects on monolayer MoS₂, Anupam Roy*, Rudresh Ghosh*, Amritesh Rai, Atresh Sanne, Kyounghwan Kim, Hema C P Movva, Rik Dey, Tanmoy Pramanik, Sayema Chowdhury, Emanuel Tutuc and Sanjay K Banerjee, Appl. Phys. Lett. 110, 201905 (2017)

[25] Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy, Tanmoy Pramanik*, Anupam Roy*, Rik Dey*, Amritesh Rai, Samaresh Guchhait, Hema C P Movva, Cheng-Chih Hsieh and Sanjay K Banerjee, J. Magn. Magn. Mater. 437, 72-77 (2017)

[26] Detection of current induced spin polarization in epitaxial Bi₂Te₃ thin film, Rik Dey, Anupam Roy, Tanmoy Pramanik, Amritesh Rai, Seung Heon Shin, Sarmita Majumdar, Leonard F Register and Sanjay K Banerjee, Appl. Phys. Lett. 110, 122403 (2017)

[27] Evidence of formation of superdense nonmagnetic cobalt, Nasrin Banu, Surendra Singh, B Satpati, A Roy, S Basu, P Chakraborty, Hema C P Movva, V Lauter and B N Dev, Scientific Reports 7, 41856 (2017)

[28] Laser spike annealing for shallow junctions in Ge CMOS, William Hsu, Feng Wen, Xiaoru Wang, Yun Wang, Andrei Dolocan, Anupam Roy, Taegon Kim, Emanuel Tutuc and Sanjay K. Banerjee, IEEE Transactions on Electron Devices 64, 346-352 (2017)

[29] A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems, Cheng-Chih Hsieh, Anupam Roy, Yao-Feng Chang, Davood Shahrjerdi and Sanjay K Banerjee, Appl. Phys. Lett. 109, 223501 (2016)

[30] Localization and interaction effects of epitaxial Bi₂Se₃ bulk states in two-dimensional limit, Rik Dey, Anupam Roy, Tanmoy Pramanik, Samaresh Guchhait, Sushant Sonde, Amritesh Rai, Leonard F Register and Sanjay K Banerjee, J. Appl. Phys. 120, 164301 (2016)

[31] First-principles simulation of oxygen vacancy migration in HfOx, CeOx, and at their interfaces for applications in resistive random-access memories, Aqyan A Bhatti, Cheng-Chih Hsieh, Anupam Roy, Leonard F Register and Sanjay K Banerjee, J. Comput. Electron. 15, 741-748 (2016)

[32] Structural and electrical properties of MoTe₂ and MoSe₂ grown by molecular beam epitaxy, Anupam Roy*, Hema C P Movva*, Biswarup Satpati, Kyounghwan Kim, Rik Dey, Amritesh Rai, Tanmoy Pramanik, Samaresh Guchhait, Emanuel Tutuc and Sanjay K Banerjee, ACS Appl. Mater. Interfaces 8, 7396-7402 (2016)

[33] Large area chemical vapor deposition growth of monolayer MoSe₂ and its controlled sulfurization to MoS₂, Rudresh Ghosh, Joon-Seok Kim, Anupam Roy, Harry Chou, Mary Vu, Sanjay K Banerjee and Deji Akinwande, J. Mater. Res. 31, 917-922 (2016)

[34] Nanoscale doping of compound semiconductors by solid phase dopant diffusion, Jaehyun Ahn, Harry Chou, Donghyi Koh, Taegon Kim, Anupam Roy, Jonghan Song and Sanjay K Banerjee, Appl. Phys. Lett. 108, 122107 (2016)

[35] Air stable doping and intrinsic mobility enhancement in monolayer MoS₂ enabled by amorphous titanium sub-oxide encapsulation, Amritesh Rai, Amithraj Valsaraj, Hema C P Movva, Anupam Roy, Rudresh Ghosh, Sushant Sonde, Sangwoo Kang, Jiwon Chang, Rik Dey, Tanuj Trivedi, Samaresh Guchhait, Stefano Larentis, Leonard F Register, Emanuel Tutuc and Sanjay K Banerjee, Nano Letters 15, 4329-4336 (2015)

[36] Characteristics and mechanism study of cerium oxide based random access memories, Cheng-Chih Hsieh, Anupam Roy, Amritesh Rai, Yao-Feng Chang and Sanjay K Banerjee, Appl. Phys. Lett. 106, 173108 (2015)

[37] Perpendicular magnetic anisotropy and spin glass-like behavior in molecular beam epitaxy grown chromium telluride thin films, Anupam Roy*, Samaresh Guchhait, Rik Dey, Tanmoy Pramanik, Cheng-Chih Hsieh, Amritesh Rai and Sanjay K Banerjee, ACS Nano 9, 3772-3779 (2015)

[38] Thin, relaxed Si_1-xGe_x virtual substrates on Si grown using C-doped Ge buffers, William Hsu, Jason Mantey, Cheng-Chih Hsieh, Anupam Roy and Sanjay K Banerjee, Appl. Phys. Lett. 105, 152107 (2014)

[39] Strong spin orbit coupling and Zeeman spin splitting in angle-dependent magnetoresistance of Bi₂Te₃, Rik Dey, Tanmoy Pramanik, Anupam Roy, Amritesh Rai, Samaresh Guchhait, Sushant Sonde, Hema C P Movva, Luigi Colombo, Leonard F Register and Sanjay K Banerjee, Appl. Phys. Lett. 104, 223111 (2014)

[40] The effect of exclusion on nonlinear reaction diffusion system in inhomogeneous media, Trilochan Bagarti, Anupam Roy, K Kundu and B N Dev, Physica A 405, 52-62 (2014)

[41] Self-organized trench-island structures in epitaxial cobalt silicide growth on Si(111), J C Mahato, Debolina Das, R Batabyal, Anupam Roy and B N Dev, Surface Science 620, 23-29 (2014)

[42] Self-organized one-atom thick fractal nanoclusters via field-induced atomic transport, R Batabyal, J C Mahato, Debolina Das, Anupam Roy and B N Dev, J. Appl. Phys. 114, 064304 (2013)

[43] Two-dimensional weak anti-localization in Bi₂Te₃ thin film grown on Si(111)-(7×7) surface by molecular beam epitaxy, Anupam Roy*, Samaresh Guchhait, Sushant Sonde, Rik Dey, Tanmoy Pramanik, Amritesh Rai, Hema C P Movva, Luigi Colombo and Sanjay K Banerjee, Appl. Phys. Lett. 102, 163118 (2013)

[44] Uniformity of epitaxial nanostructures of CoSi₂ via defect control of the Si(111) surface, J C Mahato, Debolina Das, Anupam Roy, R Batabyal, R R Juluri, P V Satyam and B N Dev, Thin Solid Films 534, 296-300 (2013)

[45] Negative differential resistance in electron tunneling in ultrathin films near the two-dimensional limit, R Batabyal, A H M Abdul Wasey, J C Mahato, Debolina Das, A Roy, G P Das and B N Dev, J. Appl. Phys. 113, 034308 (2013)

[46] A reaction diffusion model of pattern formation in clustering of adatoms on silicon surfaces, T Bagarti, Anupam Roy, K Kundu and B N Dev, AIP Advances 2, 042101 (2012)

[47] Nanodot to nanowire: A strain-driven shape transition in self-organized endotaxial CoSi₂ on Si(100), J C Mahato, Debolina Das, R R Juluri, R Batabyal, Anupam Roy, P V Satyam and B N Dev, Appl. Phys. Lett. 100, 263117 (2012)

[48] Fractal pattern formation in thermal grooving at grain boundaries in Ag films on Si(111) surfaces, A Roy, B Sundaravel, R Batabyal and B N Dev, Thin Solid Films 520, 5086-5090 (2012)

[49] Epitaxy-like orientation of nanoscale Ag islands grown on air-oxidized Si(110)-(5×1) surfaces, Anupam Roy, J K Dash, A Rath and B N Dev, Surf. Interface Anal. 44, 513-518 (2012)

[50] Patterns in Ge cluster growth on clean and oxidized Si(111)-(7×7) surfaces, Anupam Roy, Trilochan Bagarti, K Bhattacharjee, K Kundu and B N Dev, Surface Science 606, 777-783 (2012)

[51] Growth of epitaxially oriented Ag nanoislands on air-oxidized Si(111)-(7×7) surfaces: Influence of short range order on the substrate, Anupam Roy, K Bhattacharjee, J Ghatak and B N Dev, Appl. Surf. Sci. 258, 2255-2265 (2012)

[52] Growth of oriented Ag nanocrystals on air-oxidized Si surfaces: An in-situ reflection high energy electron diffraction study, Anupam Roy, K Bhattacharjee, J K Dash and B N Dev, Thin Solid Films 520, 853-860 (2011)

[53] Lateral straggling and its influence on lateral diffusion in implantation with a focused ion beam, R Batabyal, J C Mahato, A Roy, S Roy, L Bischoff and B N Dev, Nucl. Instr. and Meth. B 269, 856-860 (2011)

[54] Growth mechanisms for wire-like epitaxial gold silicide islands on Si(110) surfaces, R Batabyal, S Patra, A Roy and B N Dev, Appl. Surf. Sci. 257, 3248-3252 (2011)

[55] Growth of (√3×√3)-Ag and (111) oriented Ag islands on Ge/Si(111) surfaces, A Roy, K Bhattacharjee and B N Dev, Appl. Surf. Sci. 256, 508-512 (2009)

[56] Ge growth on self-affine fractal Si surfaces: influence of surface roughness, Anupam Roy, K Bhattacharjee, H P Lenka, D P Mahapatra, and B N Dev, J. Phys. D: Appl. Phys. 42, 145303 (2009)

[57] Growth of oriented crystalline Ag nanoislands on air-exposed Si(001) surfaces, A Roy, K Bhattacharjee, J K Dash and B N Dev, Appl. Surf. Sci. 256, 361-364 (2009)

[58] Formation of aligned nanosilicide structures in a MBE-grown Au/Si(110) system: a real-time temperature-dependent TEM study, Umananda M. Bhatta, J K Dash, Anupam Roy, A Rath and P V Satyam, J. Phys.: Condens. Matter 21, 205403 (2009)

[59] Ultrasmall Ge islands with low diameter-to-height aspect ratio on Si(100)-(2×1) surfaces, K Bhattacharjee, Anupam Roy, Jay Ghatak, P V Satyam and B N Dev, Appl. Surf. Sci. 256, 356-360 (2009)

[60] Estimation of diffusion coefficient by photoemission electron microscopy in ion-implanted nanostructures, R Batabyal, S Patra, A Roy, S Roy, L Bischoff and B N Dev, Appl. Surf. Sci. 256, 536-540 (2009)

[61] Surface roughness of ion-bombarded Si(100) surfaces: Roughening and smoothing with the same roughness exponent, Anupam Roy, K Bhattacharjee, H P Lenka, D P Mahapatra and B N Dev, Nucl. Instr. and Meth. B 266, 1276-1281 (2008)

[62] Electronic structure of Ag-adsorbed nanowire-like stripes on Si(110)-16×2 surfaces. I. An in-situ STM and STS experiment, K Bhattacharjee, A Roy, K Kundu and B N Dev, Phys. Rev. B 77, 115430 (2008)

[63] Electronic structure of Ag-adsorbed nanowire-like stripes on Si(110)-16×2 surfaces. II. A one-dimensional tight-binding model with Green’s function approach, K Bhattacharjee, A Roy, K Kundu and B N Dev, Phys. Rev. B 77, 115431 (2008)

• Research publications in Conference/Symposium Proceedings

[1] Experimental demonstration of sub-nanosecond switching in 2D hexagonal Boron Nitride resistive memory devices, SS Teja Nibhanupudi, Dmitry Veksler, Anupam Roy, Matthew Coupin, Kevin C Matthews, Jamie Warner, Gennadi Bersuker, Jaydeep P Kulkarni and Sanjay K Banerjee, Proceedings of 80^th IEEE Device Research Conference at Ohio State University, Columbus, Ohio, USA (June 26-29, 2022) Page 1-2.

[2] Silicon nanodots via sputtering of Si(111)-7×7 surfaces and post-annealing, J C Mahato, D Das, R Batabyal, Anupam Roy and B N Dev, Materials Today: Proceedings 47, 1617-1620 (2021). Proceedings of National Conference on Recent Advances in Functional Materials (RAFM-2020) at Atma Ram Sanatan Dharma College, University of Delhi, New Delhi, India (Nov 5-6, 2020) pp. 1-4.

[3] Memory and logic soft error improvement using phase transition material assisted transistors, SS Teja Nibhanupudi, Amritesh Rai, Anupam Roy, Sanjay K Banerjee and Jaydeep P Kulkarni, Proceedings of 4^th IEEE International Conference on Emerging Electronics (ICEE 2018) at Indian Institute of Science Bangalore, India (Dec 17-19, 2018) pp. 1-4.

[4] MoTe₂/MoS₂ van der Waals heterostructures with diode-like behavior and negative differential transconductance, Amritesh Rai, Hema C P Movva, Sangwoo Kang, Stefano Larentis, Anupam Roy, Emanuel Tutuc and Sanjay K Banerjee, Proceedings of TECHCON 2017 Conference (Semiconductor Research Corporation) at Austin, Texas, USA (September 10-12, 2017) Publication ID P091510.

[5] Weak antilocalization, electron-electron interaction, and universal conductance fluctuations in van der Waals epitaxially grown Bismuth Telluro-Sulfide topological insulators, Tanuj Trivedi, Sushant Sonde, Hema C P Movva, Anupam Roy and Sanjay K Banerjee, Proceedings of TECHCON 2016 Conference (Semiconductor Research Corporation) at Austin, Texas, USA (September 11-13, 2016) Publication ID P088271.

[6] Cerium oxide based bipolar resistive switching memory with low operation voltage and high resistance ratio, Cheng-Chih Hsieh, Anupam Roy, Yao-Feng Chang, Amritesh Rai and Sanjay Banerjee, Proceedings of 73^rd IEEE Device Research Conference at Ohio State University, Columbus, Ohio, USA (June 21-24, 2015) Page 101-102.

[7] Interfacial-oxygen-vacancy mediated doping of MoS₂ by high-κ dielectrics, A Rai, A Valsaraj, H C P Movva, A Roy, E Tutuc, L F Register and S K Banerjee, Proceedings of 73^rd IEEE Device Research Conference at Ohio State University, Columbus, Ohio, USA (June 21-24, 2015) Page 189-190.

[8] Quantum size effects in electronic and magnetic behaviour in epitaxial nanostructures, B N Dev, Anupam Roy, R Batabyal, M Suzuki, T Koshikawa, T Yasue, M Hasimoto and K Umezawa, Proceedings of 8^th International Symposium on Atomic Level Characterizations for New Materials and Devices 2011 (ALC ’11) at Olympic Parktel, Seoul, South Korea (May 22-27, 2011) Index no. 26BA02, Page 382-384.

[9] Tip-voltage induced modifications and real-time growth observation of adlayer on ultrathin Ag nanoislands on Si(111)-(7×7) surfaces, R Batabyal, J C Mahato, D Das, A Roy, A S Bhattacharyya and B N Dev, Proceedings of 8^th International Symposium on Atomic Level Characterizations for New Materials and Devices 2011 (ALC ’11) at Olympic Parktel, Seoul, South Korea (May 22-27, 2011) Index no. 27AM07, Page 592-594.

[10] Desorption of Ag from grain boundaries in Ag film on Br and H-passivated Si(111) surfaces, Anupam Roy, B Sundaravel, R Batabyal, J C Mahato and B N Dev, AIP Conf. Proc. 1349, 691-692 (2011), Proceedings of 55^th DAE Solid State Physics Symposium (DAE-SSPS ‘10) at Manipal University, Karnataka, India (Dec 26-30, 2010).

[11] Self-organized growth of cobalt nanostructures on Ag/Si(111)-(7×7) surfaces, R Batabyal, J C Mahato, A Roy and B N Dev, AIP Conf. Proc. 1349, 741-742 (2011), Proceedings of 55^th DAE Solid State Physics Symposium (DAE-SSPS ‘10) at Manipal University, Karnataka, India (Dec 26-30, 2010).

[12] Reaction diffusion problems on two dimensional flat surfaces with reaction centers: Diagrammatic techniques, Trilochan Bagarti, Anupam Roy, K Kundu and B N Dev, Proceedings of 3^rd National Conference on Mathematical Techniques: Emerging Paradigms for electronics and IT industries at University of Delhi, New Delhi, India (Jan 30-31, 2010) pp. ts-2.1.1 - ts-2.1.4.

[13] An in-situ scanning tunneling spectroscopy study on Ag films on Si(111): Correlation between height preference and electronic structure, K Bhattacharjee, A Roy and B N Dev, Solid State Physics (India) 49, 207 (2004), Proceedings of 49^th DAE Solid State Physics Symposium (DAE-SSPS ‘04) at Guru Nanak Dev University, Amritsar, India (Dec 26-30, 2004).

1. Funding Agency: Science and Engineering Research Board (SERB), Department of Science & Technology, Govt. of India. Title of the Project: Exploring Resistive Random Access Memory Devices based on Two-Dimensional Materials for Non-Volatile Memory Applications (SRG/2022/000788).