Birla Institute of Technology, Mesra

Faculty Image

Aminul Islam

Joined Institute on : 1-Nov-2006

  • Professor
  • Electronics and Communication Engg
  • M.E. (BIT, MESRA), PhD (AMU, Aligarh)
Contact Address

Dr. Aminul Islam, Professor, Qtr. No. CI/6, Inner campus, BIT, MESRA, Ranchi - 835215.

Dr. Aminul Islam, S/o- Fereshtulla Shake, Village - Polladanga, P.O. - Faridpur, P.S. - Jalangi, District - Murshidabad, West Bengal, Pin-742303.

  • Phone Office - 9471559180
  • Phone Residence - 8969977926
  • Email - aminulislam@bitmesra.ac.in
Work Experience

Teaching : 20 Years

Research : 20 Years

Individual: 21.5 Years

Professional Background

Served in Indian Air Force (IAF) for about 21.5 years before joining BIT, MESRA on 01 November 2006.

Award and Honours

ACHIEVEMENTS:

  1. Received congratulations on 23 Apr 2024 for the top cited article during 2022-2023 for the paper titled “Characterization of AlGaN/GaN based HEMT for low noise and high frequency application”. vol.  35, no. 1, pp.  1–12, Jan-Feb. 2022, by International Journal of Numerical Modelling: Electronic Networks, Devices and Fields.
  2. Received the IET Premium Best Paper Awards 2021 (awarded in December 2021) for the paper titled “Transmission gate-based 9T SRAM cell for variation resilient low power and reliable internet of things applications”, Volume 13, Issue 5, August 2019, p. 584 – 595” from The Institution of Engineering and Technology.
  3. Received the IET Premium Best Paper Awards 2020 (awarded in December 2020) for paper titled “Design and development of memristor-based RRAM’, Volume 13, Issue 4, July 2019, p. 548 – 557” from The Institution of Engineering and Technology

  4. Received Distinguished Alumni Award from IEI Alumni Association, at The Institution of Engineers (India), West Bengal State Centre on 17th December 2017.
  5. Elevated to IEEE Senior Member for significant achievements during last few years on 9 Jul. 2015.
  6. National Scholarship (Govt. of India) for three years during study in high school in 1983.

BEST PAPER AWARDS:

  1. The paper entitled, “Single Event Upset Mechanism in SRAM Latch and Its Circuit-Level Prevention Technique” received the best paper award in the 2022 IEEE Electron Device Kolkata Conference on (IEEE EDKCON 2022), organized by IEEE EDS Kolkata Chapter held at Vedic Village, Kolkata, India during 26-27 November 2022.
  2. The paper entitled, “Development of CNN-Based Mask Detection Technique Using Python and TensorFlow” received the best paper award in the 1st International Conference on Cyber Physical Systems and Assistive Technologies 2022 (CCPSAT2022), organized by KG Reddy College of Engineering & Technology, Hyderabad, Telangana, India, on 23-24 Sep. 2022 @ KG Reddy College of Engineering & Technology, Hyderabad, Telangana, India.
  3. The paper entitled, “Circuit-Level Technique to Design Robust SRAM Cell Against Radiation Strike” received the best paper award in the 11th International Conference on ‘Computing, Communication and Sensor Networks (CCSN 2022), organized by Department of CSA, Utkal University, Bhubaneswar, Odisha, India and co-organizer by Applied Computer Technology, Kolkata, in association with International Association of Science, Technology and Management on 23-24 Sep. 2022 @ Utkal University, Bhubaneswar, Odisha, India.
  4. The paper entitled, “Al0.30Ga0.70N/GaN Based HEMT with n-GaN Cap Layer for Satellite Communication System” received the best paper award in the International Conference on Energy System, Drives and Automation (ESDA-2021), organized by Applied Computer Technology, Kolkata, in association with International Association of Science, Technology and Management on 30-31 Dec 2021 @ hotel The Maureen, VIP Road, Kolkata, India
  5. The paper entitled, “Influence of AlN Spacer Layer SiN Passivated AlGaN/GaN HEMT” received the best paper award in 5th International Conference on Microelectronics, Circuits and Systems (Micro-2018), organized by Applied Computer Technology, Kolkata, in association with International Association of Science, Technology and Management on 20 May 2018 @ hotel The New Marrion, Bhubaneswar, Odisha, India.
  6. The paper entitled, "Analysis and Characterization of a Titanium Oxide Memristor” received the best paper award in International Conference on Computing, Communication and Sensor Network (CCSN-2016) organized by International Association of Science, Technology and Management on 25 Dec. 2016 @ Hotel Golden Park, Kolkata, West Bengal, India.
  7. The paper entitled "Development of HEMT Device for Higher Breakdown Voltage” received the best paper award in International Conference on Advanced Computing (ICAC-2016, 26-27 Oct. 2016) organized by Maulana Abul Kalam Azad University of technology (formerly West Bengal University of technology) @ CII-Suresh Neotia Centre of Excellence for Leadership, Salt Lake City, Kolkata, West Bengal, India.
  8. The paper entitled "Design of a Low-delay-write Model of a TMCAM” received the best paper award in 3rd International Conference on Information Systems Design and Intelligent Applications (INDIA-2016, 8-9 Jan. 2016) organized by Dept. of CSE, Anil Neerukonda Institute of Technology and Sciences, @ Visakhapatnam, Andhra Pradesh, India.
  9. The paper entitled "Which is the Best 2-to-1 Line Multiplexer for Ultralow-Power Applications?” received the best paper award in International Conference on Computational Intelligence & Communication Technology (ICCICT-2015, 13-14 Feb. 2015), organized by ABES Engineering College @ ABES Engineering College, Ghaziabad, Uttar Pradesh, India.
  10. The paper entitled "Performance Evaluation of Op Amp Using Emerging Device" received the best paper award in Diamond Jubilee Zonal Seminar on “Advances of Electronics, Information and Communication Technology in India” (13-14 Jul. 2013) organized by The Institute of Electronics and Telecommunication Engineers (IETE) @ ARTTC, BSNL Ranchi, Jharkhand, India.
  11. The paper entitled “Design of 2:1 Multiplexer and 1:2 Demultiplexer Using Magnetic Tunnel Junction Elements” received the best paper award in IEEE International Conference on Engineering Trends in VLSI, Embedded Systems, Nanoelectronics and Telecommunication Systems (ICEVENT-2013, 7-9 Jan. 2013) organized by SKP Engineering College @ Tiruvannamalai, Tamil Nadu, India.
Publications

 JOURNAL PAPERS

S. No.

Date

Authors/title with journal name/page nos./vol. /no.  date/year of Publication

 

 

 

  1.  

Feb. 26

Mukesh Kumar, Kalyan Koley  and Aminul Islam  "Hetero-Dielectric Step-Shaped Double-Gate TFET on SELBOX Substrate with SiGe Pocket: Suppressed Ambipolarity, Comprehensive DC, RF, and Noise Performance Evaluation under Thermal variation, ” in Semiconductor Science and Technology, vol. 41, no. 2, p. 025017, Dec. 2025, doi: 10.1088/1361-6641/ae42e1, https://doi.org/10.1088/1361-6641/ae42e1 

  1.  

Dec. 25

Utkarsh, Mukesh Kumar, Sahil, Harsh Ranjan, Swapnendu, Soumak Nandi, Shashank kumar Dubey and Aminul Islam, “Analysis of an extended source C-pocket TFET with fully overlapping dual metal gate for enhanced low-power and high-frequency performance,” in Semiconductor Science and Technology, vol. 41, no. 1, p. 015002, Dec. 2025, doi: 10.1088/1361-6641/ae2ef5, https://iopscience.iop.org/article/10.1088/1361-6641/ae2ef5

  1.  

Nov. 25

Mukesh Kumar, Gautam Bhaskar, Monalisa Pandey, Chhavi Rani, Tanishka Paira, Rekha Chaudhary, and Aminul Islam, "“A comprehensive study of junctionless TFETs as a low power device,” in Analog Integrated Circuits and Signal Processing, vol. 126, no. 1, Nov. 2025, doi: 10.1007/s10470-025-02534-6, https://doi.org/10.1007/s10470-025-02534-6

  1.  

Sep. 25

Shagufta Parveen Asif Akhtar, Santashraya Prasad, and Aminul Islam, “Performance Analysis of Reconfigurable Magnetic Tunnel Junction Based on SGS and HMM materials under Bias Voltages in VSe2/hBN/MnSe2,”  in Physica B: Condensed Matter, Publisher: Elsevier,  https://doi.org/10.1016/j.physb.2025.417806

  1.  

Sep. 25

Shagufta Parveen Asif Akhtar, Santashraya Prasad, and Aminul Islam, “Excellent spin-filtering and giant tunneling magnetoresistance in a van der Waals magnetic tunnel junction based on full-Heusler alloys Co?FeX (X=Si/Al) and 2D vdW materials WSe?/MoS?” in Physica E: Low-dimensional Systems and Nanostructures, vol. 173, no. 116299, pp. 1–15, Sep. 2025, DOI: https://doi.org/10.1016/j.physe.2025.116299

  1.  

May 25

Soumak Nandi, Shashank Kumar Dubey, Mukesh Kumar and Aminul Islam, "Design and Electrical Modelling of a Depletion-Mode P-type Triple Field-Plated AlGaN/GaN on SiC HEMT with 2.45 kV Breakdown Voltage," in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems,  Microsyst Technol 31, 1041–1056 (2025). vol. 31, no. 5, pp. 1041–1056, May. 2025, Publisher: Springer,    DOI:   https://doi.org/10.1007/s00542-024-05609-y, SharedIt: https://rdcu.be/dJCA3 

  1.  

Apr. 25

Mukesh Kumar, Gautam Bhaskar, Aditya Chotalia, Chhavi Rani, P Ghosh, Soumak Nandi, Shashank Kumar Dubey, Kalyan Koley and Aminul Islam, "Design, Simulation and Analog/RF Performance Evaluation of a Hetero- Stacked Source Dual Metal T-shaped Gate Tunnel-FET in Thermally Variable Environments" in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems,  Microsyst Technol 31, 859–875 (2025). vol. 31, no. 4, pp. 859–875, Apr. 2025, Publisher: Springer. https://doi.org/10.1007/s00542-024-05677-0, SharedIt:  https://link.springer.com/article/10.1007/s00542-024-05677-0, put into Vidwan and ORCID

  1.  

Oct. 24

Shagufta Parveen Asif Akhtar,  Santashraya Prasad, and Aminul Islam,“First principle atomistic modelling of magnetic tunnel junction (MTJ) to enhance its tunnelmagneto-resistance (TMR) ratio, ” in Engineering Research Express, vol. 6, no. 4, pp. 1-18, Nov. 2024, Article No. 045329, Publisher:  IOP Science, DOI: 10.1088/2631-8695/ad8338, SharedIt: https://doi.org/10.1088/2631-8695/ad8338 

  1.  

Oct. 24

Umayia Mushtaq, Md. Waseem Akram, Dinesh Prasad, and Aminul Islam, “An Energy and Area-Efficient Spike Frequency Adaptable LIF Neuron for Spiking Neural Networks,” in  Computers & Electrical Engineering,  vol. 119, no. 109562, pp. 1–13, Oct. 2024, Publisher: Elsevier, DOI:  https://doi.org/10.1016/j.compeleceng.2024.109562

  1.  

Sep. 24

Trivikram Chand Rachakonda, Shagufta Parveen Asif Akhtar, Aminul Islam, “High Tunneling Magneto-Resistance Ratio in Co2FeAl Heusler Alloy and WSe2 2D Material Tunnel Barrier-Based Magnetic Tunnel Junctions,” in Journal of Magnetism and Magnetic Materials, vol. 606, no. 172365, pp. 1–10, Sep. 2024, Publisher: Elsevier, DOI:  https://doi.org/10.1016/j.jmmm.2024.172365

  1.  

June 24

Mushtaq, U., Akram, M.W., Prasad, D., Islam, A., “INDIDO: A Novel Low-Power Approach for Domino Logic Circuits,” in Physica Scripta, vol. 99, No. 7, pp. 075914, June. 2024. Publisher: IOP Science. DOI: 10.1088/1402-4896/ad5061, URL:  https://iopscience.iop.org/article/10.1088/1402-4896/ad5061, SharedIt:  

  1.  

Mar. 24

Soumak Nandi, Shashank Kumar Dubey, Mukesh Kumar and Aminul Islam, “Composite Channel 100 nm InP HEMT with Ultrathin Barrier for Millimetre Wave Applications” in Engineering Research Express, vol. 6, no. 1, pp. 015316, Mar. 2024, Publisher:  IOP Science, DOI: 10.1088/2631-8695/ad2efa, SharedIt:  https://iopscience.iop.org/article/10.1088/2631-8695/ad2efa/pdf

  1.  

Feb. 24

M. Pandey and A. Islam, "Radiation Tolerant by Design 12-Transistor Static Random Access Memory," in Journal of Semiconductor Technology and Science. vol. 24, no. 3, pp. 165 - 178, June. 2024, Publisher: IEEK (Institute Electronic Engineers of Korea Society) Publication Center, DOI: https://doi.org/10.5573/JSTS.2024.24.3.165

  1.  

Feb. 24

Monalisa Pandey and Aminul Islam, “Circuit-Level Design of Radiation Tolerant Memory Cell,” in  AEÜ - International Journal of Electronics and Communications, vol. 175, pp.  155103, Feb. 2024, Publisher: Elsevier, DOI:  https://doi.org/10.1016/j.aeue.2023.155103, SharedIt: https://s100.copyright.com/AppDispatchServlet?publisherName=ELS&contentID=S1434841123005794&orderBeanReset=true

  1.  

Feb. 24

Shashank Kumar Dubey, and Aminul Islam, “Effect of High-k Dielectric HfO2 on Performance of AlGaN/GaN Based MOSHEMT for RF Applications,” in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems, vol. 30, no. 4, pp. 163 - 175, Feb. 2024, Publisher: Springer.   DOI:   https://doi.org/10.1007/s00542-023-05576-w, SharedIt: https://rdcu.be/dEtT2  

  1.  

Jan. 24

Mushtaq, U., Akram, M.W., Prasad, D., Islam, A., Nagar, B.C., “Impact of Variability on Novel Transistor Configurations in Adder Circuits at 7 nm FinFET Technology,” in Journal of Circuits, Systems and Computers, vol. 33, no. 13, pp. 2450237 (1-20), Jan. 2024, Publisher: World Scientific, DOI: https://doi.org/10.1142/S0218126624502372, SharedIt: https://www.worldscientific.com/doi/epdf/10.1142/S0218126624502372

  1.  

Nov. 23

S. Nandi, S. K. Dubey, M. Kumar, A. K. Dwivedi, M. Guduri and A. Islam, "Design and Investigation of a Metamorphic InAs Channel Inset InP HEMT for Cryogenic Low-Noise Amplifiers," in IEEE Access, vol. 11, pp. 133115-133130, 2023, doi: 10.1109/ACCESS.2023.3337036. https://ieeexplore.ieee.org/document/10328869, SharedIt:  https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10328869

  1.  

Nov. 23

Monalisa Pandey and Aminul Islam, “Circuit-level technique to design robust SRAM cell against radiation strike,” in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems, vol. 30, no. 5, pp. 545 - 564, Nov. 2023, Publisher: Springer.   DOI:   https://doi.org/10.1007/s00542-023-05544-4, SharedIt:  https://rdcu.be/dIGa5

  1.  

Apr. 23

Shashank Kumar Dubey, and Aminul Islam, “Impact of gate recessing on DC, RF and noise parameters of 6H-SiC-based Al0.30Ga0.70N/GaN HEMT for RF and low noise applications,” in  Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systemsvol. 29, no. 4, pp. 515 - 525, Apr. 2023, Publisher: Springer.   DOI:  https://doi.org/10.1007/s00542-022-05362-0, SharedIt:  https://rdcu.be/dEtOg 

  1.  

Mar. 23

Santashraya Prasad and Aminul Islam, “Characterization of AlInN/GaN based HEMT for Radio Frequency Applications” in Micro and Nanosystems, vol. 15, No. 1, pp.  55 – 64,  2023. Publisher: Bentham Science Publishers, DOI: 10.2174/1876402914666220510112625,    https://doi.org/10.2174/1876402914666220510112625

  1.  

Dec. 22

A. Sinha, M. Guduri, P. Srivastava, and A. Islam “Non-volatile binary content addressable memory cell with read/write scheme using spin-polarized current mode magnetic tunnel junction,” in  Journal of Engineering Science and Technology (JESTEC),  vol. 17, no. 6, pp. 4005–4021, Dec. 2022, Publisher:  School of Engineering. Taylor’s University. SharedIt: https://jestec.taylors.edu.my/Vol%2017%20Issue%206%20December%202022/17_6_19.pdf,  DOI: https://jestec.taylors.edu.my/V17Issue6.htm

  1.  

Sep. 22

Pratik Kumar Singh, Rohit Raj, Vivek Kumar, Monalisa Pandey, Santashraya Prasad and Aminul Islam, “Comparative Analysis and Robustness Study of Logic Styles,” in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems.  vol. 28, no. 12, pp. 2807–2820, Dec. 2022, Publisher: Springer. DOI: https://doi.org/10.1007/s00542-022-05378-6, Vol. & No. is here:   https://link.springer.com/journal/542/volumes-and-issues/28-12, SharedId: https://rdcu.be/dEtGL 

  1.  

Oct. 22

Santashraya Prasad, and Aminul Islam, “Y-shaped double-gate high electron mobility transistor for radio frequency applications,” Int. J. Nanoparticles, Vol. 14, No. 2/3/4, pp. 181-201, Oct 2022. DOI: https://doi.org/10.1504/IJNP.2022.126356, SharedIt:  https://www.inderscience.com/info/inarticle.php?artid=126356,  Publisher: Inderscience.

  1.  

Jun. 22

Ravi Teja Yekula, Monalisa Pandey and Aminul Islam, “A Highly Reliable Radiation Tolerant 13T SRAM Cell for Deep Space Applications,” in Microelectronics reliability, vol. 133, pp. 1–14, Jun. 2022. Publisher: Elsevier, DOI:  https://doi.org/10.1016/j.microrel.2022.114527, SharedIt:  https://www.sciencedirect.com/getaccess/pii/S0026271422000518/purchase

  1.  

Mar. 22

Soumitra Pal, Subhankar Bose, and A. Islam, “Design of Memristor Based Low Power and Highly Reliable ReRAM Cell,” in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems.  vol. 28, no. 3, pp. 793 - 807, Mar. 2022, Publisher: Springer.   DOI: https://doi.org/10.1007/s00542-019-04582-1, SharedIt: https://rdcu.be/dEq78  

  1.  

Mar. 22

Soumitra Pal, Subhankar Bose, and A. Islam, “Design of SRAM Cell for Low Power Portable Healthcare Applications,” in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems, vol.  28, no. 3, pp.  833–844, Mar. 2022, Publisher: Springer. DOI: https://doi.org/10.1007/s00542-020-04809-6, SharedIt: https://rdcu.be/dEq6n  

  1.  

Feb. 22

Shashank Kumar Dubey, and Aminul Islam, “Al0.30Ga0.70N /GaN MODFET with triple-teeth metal for RF and high-power applications,” in Physica Scripta, vol. 97, No. 3, pp. 034003, Feb. 2022. Publisher: IOP Science. DOI:10.1088/1402-4896/ac50c3, URL: https://doi.org/10.1088/1402-4896/ac50c3, SharedIt:  https://www.reprintsdesk.com/login/login.aspx

  1.  

Jan. 22

Shashank Kumar Dubey, Meena Mishra, and Aminul Islam, “Characterization of AlGaN/GaN Based HEMT for Low Noise and High Frequency Application" in International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, vol.  35, no. 1, pp.  1–12, Jan-Feb. 2022, Publisher: Wiley. DOI: https://doi.org/10.1002/jnm.2932, SharedIt:  https://onlinelibrary.wiley.com/doi/epdf/10.1002/jnm.2932 

  1.  

Oct. 21

S. Pal, S. Mohapatra, W. -H. Ki and A. Islam, "Soft-Error-Aware Read-Decoupled SRAM With Multi-Node Recovery for Aerospace Applications," in IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 68, no. 10, pp. 3336-3340, Oct. 2021, doi: 10.1109/TCSII.2021.3073947. https://doi.org/10.1109/TCSII.2021.3073947, SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9406943 

  1.  

Aug. 21

S. Pal, S. Mohapatra, W. -H. Ki and A. Islam, "Soft-Error-Immune Read-Stability-Improved SRAM for Multi-Node Upset Tolerance in Space Applications," in IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 68, no. 8, pp. 3317-3327, Aug. 2021, doi: 10.1109/TCSI.2021.3085516. https://doi.org/10.1109/TCSI.2021.3085516, SharedId:  https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9472876  

  1.  

Jul. 21

S. Pal, D. D. Sri, W. -H. Ki and A. Islam, “Radiation?hardened read?decoupled low?power 12T SRAM for space applications,” in International Journal of Circuit Theory and Applications, vol. 49, no. 11, pp. 3583–3596, Jul. 2021. Publisher: Wiley. DOI: 10.1002/cta.3093. https://doi.org/10.1002/cta.3093, SharedIt: https://onlinelibrary.wiley.com/doi/epdf/10.1002/cta.3093

  1.  

Jun. 21

S. Pal, S. Mohapatra, W. -H. Ki and A. Islam, "Design of Soft-Error-Aware SRAM With Multi-Node Upset Recovery for Aerospace Applications," in IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 68, no. 6, pp. 2470-2480, June 2021, doi: 10.1109/TCSI.2021.3064870.  https://doi.org/10.1109/TCSI.2021.3064870,  SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9429940  

  1.  

Jun. 21

S. Pal, D. D. Sri, W. -H. Ki and A. Islam, "Highly Stable Low Power Radiation Hardened Memory-by-Design SRAM for Space Applications," in IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 68, no. 6, pp. 2147-2151, June 2021, doi: https://doi.org/10.1109/TCSII.2020.3042520, SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9281113

  1.  

May 21

S. Pal, D. D. Sri, W. -H. Ki and A. Islam, "Soft-Error Resilient Read Decoupled SRAM With Multi-Node Upset Recovery for Space Applications," in IEEE Transactions on Electron Devices, vol. 68, no. 5, pp. 2246-2254, May 2021, DOI: https://doi.org/10.1109/TED.2021.3061642, SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9385706 

  1.  

May 21

Chandramauleshwar Roy, Aminul Islam, “Design of low power, variation tolerant single bitline 9T SRAM cell in 16-nm technology in subthreshold region,” in Microelectronics reliability, vol. 120, pp. 1–12, May 2021. Publisher: Elsevier, DOI:  https://doi.org/10.1016/j.microrel.2021.114126,  SharedIt:  https://www.sciencedirect.com/journal/microelectronics-reliability/vol/120/suppl/C  

  1.  

Feb. 21

Soumitra Pal, Vivek Gupta, Aminul Islam, “Variation resilient low-power memristor-based synchronous flip-flops: design and analysis” in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems, vol. 27, no. 2, pp. 525-538, Feb. 2021, Publisher: Springer. DOI:   https://doi.org/10.1007/s00542-018-4044-6, Vol. & No. is here:  https://link.springer.com/journal/542/volumes-and-issues/27-2, SharedIt: https://rdcu.be/dEqkP  

  1.  

Oct. 20

Chandramauleshwar Roy, Aminul Islam, “Design of differential TG based 8T SRAM cell for ultralow-power applications in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems, vol. 26, no. 10, pp.   3299 - 3310, Oct 2020, DOI: 10.1007/s00542-017-3570-y, Publisher: Springer. https://link.springer.com/article/10.1007/s00542-018-4035-7,  SharedIt:  https://rdcu.be/dEqjt

  1.  

Oct. 20

Aminul Islam, N. S. Ranjan, Amit Krishna Dwivedi, “Compact design of an MTJ-based non-volatile CAM cell with read/write operations,” in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems, vol. 26, no. 10, pp.   3259 - 3270, Oct. 2020, Publisher: Springer. DOI:  https://doi.org/10.1007/s00542-018-4008-x,  SharedIt: https://rdcu.be/dEqiO

  1.  

Oct. 20

Vikash Kumar and Aminul Islam, “Study of Variability Performance of CMOS Active Inductors,” in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems, vol. 26, no. 10, pp.  3101 - 3111, Oct. 2020. Publisher: Springer, DOI:   https://doi.org/10.1007/s00542-017-3693-1, SharedIt: https://rdcu.be/dElYu  

  1.  

Sep. 20

Amresh Kumar, Amit Krishna Dwivedi and Aminul Islam, “Variation resilient reliable design of trigger pulse generator,” in IET Circuits, Devices & Systems , vol. 14, no. 6, pp.  860-868, Sep. 2020. Publisher: IET. https://onlinelibrary.wiley.com/doi/10.1049/iet-cds.2019.0362, SharedIt: https://ietresearch.onlinelibrary.wiley.com/doi/epdf/10.1049/iet-cds.2019.0362 

  1.  

Jul. 20

Indrajit Pal, Vikash Kumar, Nilay Aishwarya, Abhijeet Nayak, Aminul Islam, “A VDTA-based robust electronically tunable memristor emulator circuit,” in Analog Integrated Circuits and Signal Processing, vol. 99, no. 1, pp. 95–109, Jul. 2020. Publisher: Springer, DOI: https://doi.org/10.1007/s10470-019-01575-y, SharedIt: https://rdcu.be/dElQ3

  1.  

Jul. 20

S. Pal, S. Bose, and A. Islam, “A low power SRAM cell design for wireless sensor network applications,” in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems, vol. 26, no. 7, pp. 2325 – 2335, Jul. 2020, Publisher: Springer. DOI:    https://doi.org/10.1007/s00542-019-04708-5, SharedIt: https://rdcu.be/dElKX

  1.  

Jul. 20

Nilay Aishwarya, Abhijeet Nayak, Indrajit Pal, Vikash Kumar, Aminul Islam, “A novel CNFET based tunable memristor emulator,” in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems.  vol. 26, no. 7, pp. 2173 – 2181, Jul. 2020, DOI: 10.1007/s00542-019-04486-0, Publisher: Springer.  https://doi.org/10.1007/s00542-019-04486-0, SharedIt: https://rdcu.be/dElJn  

  1.  

Jul. 20

Shashank Kumar Dubey, Krishnpriya Sinha, Pawan Kumar Sahu, Ritesh Ranjan, Atandra Pal and Aminul Islam, “Characterization of InP-based pseudomorphic HEMT with T-gate,” in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems.  vol. 26, no. 7, pp. 2183 – 2191, Jul. 2020, DOI: 10.1007/s00542-019-04491-3, Publisher: Springer.  https://doi.org/10.1007/s00542-019-04491-3,  SharedIt: https://rdcu.be/dElHc

  1.  

Jul. 20

Krishnpriya Sinha, Shashank Kumar Dubey, Aminul Islam, “Study of high Al fraction in AlGaN barrier HEMT and GaN and InGaN channel HEMT with In0.17Al0.83N barrier,” in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems.  vol. 26, no. 7, pp. 2145 – 2158, Jul. 2020, DOI: 10.1007/s00542-019-04466-4, Publisher: Springer.  DOI: https://doi.org/10.1007/s00542-019-04466-4, SharedIt: https://rdcu.be/dElFt

  1.  

May 20

Shubham Kumar, Satyam Saraiyan, Shashank Kumar Dubey, S. Pal, Aminul Islam, “A 2.4 GHz Double Balanced Downconversion Mixer with Improved Conversion Gain in 180-nm Technology,”  in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems, vol. 26, no. 5, pp. 1721–1731, May 2020, Publisher: Springer. DOI:    https://doi.org/10.1007/s00542-019-04718-3, SharedIt: https://rdcu.be/dElEw   

  1.  

May 20

Chandramauleshwar Roy, Aminul Islam, “Characterization of Single-Ended 9T SRAM Cell,” in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems, vol. 26, no. 5, pp. 1591–1604, May. 2020, Publisher: Springer. DOI:   https://doi.org/10.1007/s00542-019-04700-z,  SharedIt: https://rdcu.be/dElDe

  1.  

Apr. 20

Shashank Kumar Dubey, Aminul Islam, “Design of Resistive Random Access Memory Cell and Its Architecture,” in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems, vol. 26, no. 4, pp. 13251332, Apr. 2020, Publisher: Springer. DOI:   https://doi.org/10.1007/s00542-019-04663-1,  SharedIt: https://rdcu.be/dElBF

  1.  

Mar. 20

Shashank Kumar Dubey, A. Reddy, Rashi Patel, Master Abz, Avireni Srinivasulu, Aminul Islam, “Architecture of resistive RAM with write driver,” in Solid State Electronics Letters, vol. 2, pp. 10-22, Mar. 2020, Publisher: KeAi. DOI: https://doi.org/10.1016/j.ssel.2020.01.001   

  1.  

Mar. 20

S. Pal, S. Bose, W. Ki and A. Islam, “Reliable Write Assist Low Power SRAM Cell for Wireless Sensor Network Applications,” in IET Circuits, Devices & Systems, vol. 14, no. 2, pp.  137-147, Mar. 2020. DOI: https://doi.org/10.1049/iet-cds.2019.0050, Publisher: IET. URL: https://onlinelibrary.wiley.com/doi/abs/10.1049/iet-cds.2019.0050, SharedIt:  https://ietresearch.onlinelibrary.wiley.com/doi/epdf/10.1049/iet-cds.2019.0050

  1.  

Feb. 20

S. Pal, S. Bose, W. Ki and A. Islam, "A Highly Stable Reliable SRAM Cell Design for Low Power Applications," in Microelectronics reliability, vol. 105, pp. 1-11, Feb. 2020. Publisher: Elsevier, DOI:  https://doi.org/10.1016/j.microrel.2019.113503

  1.  

Jan. 20

S. Pal, S. Bose, W. Ki and A. Islam,Half-Select-Free Low-Power Dynamic Loop-Cutting Write Assist SRAM Cell for Space Applications,” in IEEE Transactions on Electron Devices, vol. 67, no. 1, pp. 80-89, Jan. 2020. doi: https://doi.org/10.1109/TED.2019.2952397,  SharedIt:  https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8935501  

  1.  

Nov. 19

S. Pal, S. Bose, W. Ki and A. Islam, "Characterization of Half-select Free Write Assist 9T SRAM Cell," in IEEE Transactions on Electron Devices, vol. 66, no. 11, pp. 4745-4752, Nov. 2019. doi: https://doi.org/10.1109/TED.2019.2942493, SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8863651 

  1.  

Aug. 19

Soumitra Pal, Vivek Gupta, Wing Hung Ki, Aminul Islam, "Transmission gate-based 9T SRAM cell for variation resilient low power and reliable internet of things applications," in IET Circuits, Devices & Systems, vol. 13, no. 5, pp. 584-595, Aug. 2019. Publisher: IET, URL:  https://ietresearch.onlinelibrary.wiley.com/doi/epdf/10.1049/iet-cds.2018.5283, DOI:  https://doi.org/10.1049/iet-cds.2018.5283

  1.  

Jul. 19

S. Pal, S. Bose, W. Ki and A. Islam, "Design of Power-and Variability-Aware Nonvolatile RRAM Cell Using Memristor as a Memory Element," in IEEE Journal of the Electron Devices Society, vol. 7, no. 1, pp. 701-709, Jul. 2019. doi: 10.1109/JEDS.2019.2928830, https://doi.org/10.1109/JEDS.2019.2928830, SharedIt:  https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8764438

  1.  

Jul. 19

Soumitra Pal, Vivek Gupta, Wing Hung Ki, Aminul Islam, “Design and development of memristor-based RRAM” in IET Circuits, Devices & Systems, vol. 13, no. 4, pp. 548-557, Jul. 2019,  Publisher: IET,  SharedIt:  https://ietresearch.onlinelibrary.wiley.com/doi/epdf/10.1049/iet-cds.2018.5388, DOI: https://doi.org/10.1049/iet-cds.2018.5388

  1.  

May 19

Vikash Kumar,  Rishab Mehra, Aminul Islam, " A CMOS active inductor based digital and analog dual tuned voltage-controlled oscillator," in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems, vol. 25, no. 5, pp.  1571–1583 , May 2019. DOI  10.1007/s00542-017-3457-y, Publisher: Springer.

https://doi.org/10.1007/s00542-017-3457-y, SharedIt:  https://rdcu.be/dEv9r   

  1.  

May 19

Manisha Guduri, Amit Krishna Dwivedi, Sananya Majumder, Riya, and Aminul Islam, “An efficient circuit-level power reduction technique for ultralow power applications,” in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems, vol. 25, no. 5, pp. 1689–1697, May 2019. DOI: 10.1007/s00542-018-4103-z, Publisher: Springer. https://doi.org/10.1007/s00542-018-4103-z,  SharedIt: https://rdcu.be/dEjpG

  1.  

May 19

Chandramauleshwar Roy, Aminul Islam, “Power-aware sourse feedback single-ended 7T SRAM cell at nanoscale regime,” in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems, vol. 25, no. 5, pp.  1783–1791, May 2019. DOI: 10.1007/s00542-017-3570-y, Publisher: Springer.  https://doi.org/10.1007/s00542-017-3570-y,  SharedIt: https://rdcu.be/dEjnS    

  1.  

May 19

Manisha Guduri Vishesh Dokania, Richa Verma, and Aminul Islam, “Minimum Energy Solution for Ultra-Low Power Applications,” in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems, vol. 25, no. 5, pp. 1823–1831, May 2019. DOI: 10.1007/s00542-018-3785-6, Publisher: Springer. https://link.springer.com/article/10.1007%2Fs00542-018-3785-6,  SharedIt: https://rdcu.be/dEjjf   

  1.  

May 19

Rishab Mehra, Aminul Islam, “A Low Power, Temperature Compensated, Robust Design of CS Amplifier in Nanoscale Regime,” in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems,  vol. 25, no. 5, pp. 1841–1852, May 2019, Publisher: Springer. DOI:  https://doi.org/10.1007/s00542-018-3851-0,  SharedIt: https://rdcu.be/dEjch

  1.  

May 19

Anumita Sengupta, Aminul Islam, “Comparative analysis of AlGaN/GaN high electron mobility transistor with sapphire and 4H-SiC substrate,” in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems,  vol. 25, no. 5, pp. 1927–1935, May 2019, Publisher: Springer. DOI:  https://doi.org/10.1007/s00542-018-3903-5,   SharedIt: https://rdcu.be/dFRpb   

  1.  

Apr. 19

Sudip Kundu, Siddhartha Sarkar, Pradip Mandal, Aminul Islam, “Modeling and Sizing of Non-linear CMOS Analog Circuits used in Mixed Signal Systems,” in Analog Integrated Circuits and Signal Processing, vol. 99, no. 1, pp. 95–109, Apr. 2019. Publisher: Springer, DOI: https://doi.org/10.1007/s10470-018-1310-6

  1.  

Apr. 19

Soumitra Pal, Vivek Gupta, Aminul Islam, “Design of CNFET based power- and variability-aware nonvolatile RRAM cell,” Microelectronics Journal vol. 86, pp. 7–14, Apr. 2019. Publisher: Elsevier, https://doi.org/10.1016/j.mejo.2019.02.009

  1.  

Oct. 19

Vikash Kumar, Rishab Mehra, A. Islam, "Design and Analysis of MISO Bi-quad Active Filter," in International Journal of Electronics, vol. 106, no. 2, pp. 287 - 304, Oct. 2018. Publisher: Taylor & Francis, DOI:  https://doi.org/10.1080/00207217.2018.1525769, https://www.tandfonline.com/doi/full/10.1080/00207217.2018.1525769

  1.  

Sep. 18

R. Mehra, V. Kumar and A. Islam, "Reliable and Q-Enhanced Floating Active Inductors and Their Application in RF Bandpass Filters," in IEEE Access, vol. 6, pp. 48181-48194, Sep. 2018. doi: 10.1109/ACCESS.2018.2868181,  https://doi.org/10.1109/ACCESS.2018.2868181

SharedIt:  https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8452884

  1.  

Jun. 18

Indrajit Pal, Aminul Islam, “Circuit-Level Technique to Design Variation- and Noise-Aware Reliable Dynamic Logic Gates,” in IEEE Transactions on Device and Materials Reliability,  vol. 18, no. 2, pp. 224-239, Jun. 2018.  DOI:  https://doi.org/10.1109/TDMR.2018.2819019, SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8323211

  1.  

Apr. 18

Amit Krishna Dwivedi, Sarika Tyagi, Aminul Islam, “Compact versatile noise suppressed programmable trigger pulse generator for Industrial applications,” National Academy Science Letters, vol. 41, no. 2, pp. 97-101, Apr. 2018. Publisher: Springer, DOI:  https://doi.org/10.1007/s40009-018-0626-1

  1.  

Feb. 18

D. Bharti and A. Islam, "Optimization of SiC UMOSFET Structure for Improvement of Breakdown Voltage and ON-Resistance," in IEEE Transactions on Electron Devices, vol. 65, no. 2, pp. 615-621, Feb. 2018.
doi: 10.1109/TED.2017.2779482,
https://doi.org/10.1109/TED.2017.2779482, SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8219389

  1.  

Jan. 18

Vikash Kumar and Aminul Islam, “Performance Analysis of Two Novel CMOS Active Grounded and Floating Inductors Suitable for RF Bandpass Filter Applications” in Recent Advances in Electrical & Electronic Engineering, vol. 11, no. 4, pp. 487 498, 2018. Publisher: Bentham Science,  https://doi.org/10.2174/2352096511666180116155417

  1.  

Jan. 18

Rishab Mehra, Vikash Kumar, Aminul Islam, “Floating active inductor based Class-C VCO with 8 digitally tuned sub-bands,” in AEÜ - International Journal of Electronics and Communications, vol. 83, pp. 1-10, Jan. 2018, Publisher: Elsevier, DOI:  https://doi.org/10.1016/j.aeue.2017.08.018

  1.  

Dec. 18

Vishesh Dokania, Richa Verma,  Manisha Guduri, Aminul Islam, “Design of 10T Full Adder Cell for Ultralow-Power Applications,” in Ain Shams Engineering Journal, vol. 9, no. 4, pp. 2363-2372, Dec. 2018, Publisher: Elsevier, SharedIt: and DOI:  https://doi.org/10.1016/j.asej.2017.05.004

  1.  

Sep. 17

Anubhav Sinha, Aminul Islam, "Low-Power Half-Select Free Single-Ended 10 Transistor SRAM Cell," in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems, vol. 23, no. 9, pp. 4133–4144, Sep. 2017, Publisher: Springer.

DOI: http://link.springer.com/article/10.1007/s00542-016-3032-y, SharedIt: https://rdcu.be/dEwnE

  1.  

Sep. 17

Amresh Kumar, Aminul Islam, "Multi-Gate Device and Summing-Circuit Co-design Robustness Studies @ 32-nm Technology Node," in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems, vol. 23, no. 9, pp. 4099–4109, Sep. 2017. DOI 10.1007/s00542-016-3055-4, Publisher: Springer. http://link.springer.com/article/10.1007/s00542-016-3055-4,  SharedIt:  https://rdcu.be/dEwqX

  1.  

Sep. 17

Manisha Guduri, Rishab Mehra, Pragya Srivastava, Aminul Islam, "Current-Mode Circuit-Level Technique to Design Variation-Aware Nanoscale Summing Circuit for Ultra-Low Power Applications," in Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems, vol. 23, no. 9, pp. 4045–4056, Sep. 2017. Publisher: Springer, http://link.springer.com/article/10.1007/s00542-016-2994-0 

  1.  

Jun. 17

Chandramauleshwar Roy, Arundhati Bhattacharya, Aminul Islam, "Modeling of MTJ and its validation using nanoscale MRAM bitcell," in Journal of Engineering Science and Technology, vol. 12, no. 6, pp. 1525 – 1540, Jun. 2017. Publisher: Taylor’s University, http://jestec.taylors.edu.my/V12Issue6.htm, SharedIt: https://jestec.taylors.edu.my/Vol%2012%20issue%206%20June%202017/12_6_8.pdf

  1.  

May 17

Rishab Mehra, Vikash Kumar, Aminul Islam, and Brajesh Kumar Kaushik, “Variation-Aware Nanoscale Design of CMOS Active Inductor Based RF Bandpass Filter,” in International Journal of Circuit Theory and Applications, vol. 45, no. 12, pp. 2181-2200, May 2017. Publisher: Wiley. doi: 10.1002/cta.2364. https://doi.org/10.1002/cta.2364, SharedIt:

http://onlinelibrary.wiley.com/doi/10.1002/cta.2364/full

  1.  

Apr. 17

Manisha Guduri, Aminul Islam, “Novel Pass-Transistor Logic Based Ultralow Power Variation Resilient CMOS Full Adder,” in Journal of Semiconductor Technology and Science, vol. 17, no. 2, pp. 302 – 317, Apr. 2017,  Publisher: IEEK (Institute Electronic Engineers of Korea Society) Publication Center, DOI: https://doi.org/10.5573/JSTS.2017.17.2.302, SharedIt: https://www.medsci.cn/sci/show_paper.asp?id=6c0b1115a4636133

  1.  

Mar. 17

Vikash Kumar, Rishab Mehra, Aminul Islam, “A 2.5GHz Low Power, High-Q, Reliable Design of Active Bandpass Filter,” in IEEE Transactions on Device and Materials Reliability, vol. 17, no. 1, pp. 229-244, Mar. 2017. DOI: https://doi.org/10.1109/TDMR.2017.2652142, SharedIt:  https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7814293

  1.  

Nov. 16

Swapnil Sourav, Rishab Mehra, Aminul Islam, "Robust Design of Differential Amplifier with Diode-Connected Voltage Reference," in Indian Journal of Science and Technology, vol. 9, no. 44, pp. 1-7, Nov. 2016. DOI  10.17485/ijst/2016/v9i44/105278, Publisher: Indian Society for Education and Environment. http://www.indjst.org/index.php/indjst/article/view/105278, SharedIt: https://indjst.org/articles/robustness-study-and-comparison-between-p-channel-and-n-channel-input-single-stage-ota  

  1.  

Nov. 16

Swapnil Sourav, Aminul Islam, "Robustness Study and Comparison Between P-channel and N-channel Input Single-Stage OTA," in Indian Journal of Science and Technology, vol. 9, no. 44, pp. 1-6, Nov. 2016.  DOI   10.17485/ijst/2016/v9i44/105277  Publisher: Indian Society for Education and Environment. SharedIt:  http://www.indjst.org/index.php/indjst/article/view/105277,

  1.  

Nov. 16

Sarita Kumari, Rishab Mehra, Aminul Islam, "Impact of Process Variations on Open Circuit Voltage Gain of CMOS Inverting Amplifiers," in Indian Journal of Science and Technology, vol. 9, no. 44, pp. 1-8, Nov. 2016. SharedIt: and DOI: 10.17485/ijst/2016/v9i44/105274, Publisher: Indian Society for Education and Environment.  http://www.indjst.org/index.php/indjst/article/view/105274

  1.  

Nov. 16

Vikash Kumar, Prashant Gupta, Shashank Kumar Ranu, Manish Kumar Pandey, Aminul Islam, "Design of Reversible Number Generator using Finite State Automaton Realization," in Indian Journal of Science and Technology, vol. 9, no. 44, pp. 1-5, Nov. 2016. SharedIt: and DOI: 10.17485/ijst/2016/v9i44/99518, Publisher: Indian Society for Education and Environment.  http://www.indjst.org/index.php/indjst/article/view/99518

  1.  

Nov. 16

Vikash Kumar, Manish Kumar Pandey, Shashank Kumar Ranu, Prashant Gupta, Aminul Islam, "A New Robust and Reliable Sub-threshold XOR Circuit with Full Output Swing," in Indian Journal of Science and Technology, vol. 9, no. 44, pp. 1-6, Nov. 2016. SharedIt: and DOI: 10.17485/ijst/2016/v9i44/99517, Publisher: Indian Society for Education and Environment.  http://www.indjst.org/index.php/indjst/article/view/99517

  1.  

Nov. 16

Vikash Kumar, Yashdeep Singh, Ravi Kumar Prinshu, Aminul Islam, "Low Voltage Charge Pump for RF Energy Harvesting Applications," in Indian Journal of Science and Technology, vol. 9, no. 44, pp. 1-5, Nov. 2016. SharedIt: and DOI: 10.17485/ijst/2016/v9i44/99512, Publisher: Indian Society for Education and Environment.  http://www.indjst.org/index.php/indjst/article/view/99512

  1.  

Oct. 16

Soumitra Pal, Aminul Islam, "Low Power and High Variation Tolerant 9T-SRAM cell at 16-nm Technology Node," in Indian Journal of Science and Technology, vol. 9, no. 40, pp. 1-7, Oct. 2016. SharedIt: and DOI: 10.17485/ijst/2016/v9i40/99586, Publisher: Indian Society for Education and Environment.  http://www.indjst.org/index.php/indjst/article/view/99586

  1.  

Oct. 16

Manisha Guduri, Aminul Islam, "Analysis of XOR Circuits for Ultralow-Power Applications in Deep Subthreshold Region," in Indian Journal of Science and Technology, vol. 9, no. 40, pp. 1-6, Oct. 2016. SharedIt: and DOI: 10.17485/ijst/2016/v9i40/99510, Publisher: Indian Society for Education and Environment.  http://www.indjst.org/index.php/indjst/article/view/99510

  1.  

Oct. 16

V. Karthik Reddy, Manisha Guduri, N Lakshmi Dheshik Reddy, Peddi Dharani, Santashraya Prasad, A. Islam, "Threshold Voltage Extraction of 220 nm FDSOI Device Using Linear Extrapolation Method," in Indian Journal of Science and Technology, vol. 9, no. 40, pp. 1-4, Oct. 2016. SharedIt: and DOI: 10.17485/ijst/2016/v9i40/99511, Publisher: Indian Society for Education and Environment.  http://www.indjst.org/index.php/indjst/article/view/99511

  1.  

Oct. 16

Chandramauleshwar Roy, Aminul Islam, "Design of 10T SRAM Cell using Column-Line Assist and DTMOS Techniques," in Indian Journal of Science and Technology, vol. 9, no. 40, pp. 1-6, Oct. 2016. SharedIt: and DOI DOI: 10.17485/ijst/2016/v9i40/99509, Publisher: Indian Society for Education and Environment.  http://www.indjst.org/index.php/indjst/article/view/99509

  1.  

Sep. 16

Manisha Guduri, Amit Krishna Dwivedi, Aminul Islam, "High Vt-Low Leakage FDSOI Device for Ultra-Low Power Operation," in Indian Journal of Science and Technology, vol. 9, no. 33, pp. 1-5, Sep. 2016. SharedIt: and DOI: 10.17485/ijst/2016/v9i33/99516, Publisher: Indian Society for Education and Environment. http://www.indjst.org/index.php/indjst/article/view/99516

  1.  

Sep. 16

Chandramauleswar Roy, Aminul Islam, "TG Based 2T2M RRAM Using Memristor as Memory Element," in Indian Journal of Science and Technology, vol. 9, no. 33, pp. 1-5, Sep. 2016. SharedIt: and DOI: 10.17485/ijst/2016/v9i33/99508, Publisher: Indian Society for Education and Environment.  http://www.indjst.org/index.php/indjst/article/view/99508

  1.  

Sep. 16

Shrey Khanna, Debosmit Majumder, Vikash Kumar, Santashraya Prasad, Aminul Islam, "Impact of Temperature Variation on Resonant Frequency of Active Grounded Inductor-Based Bandpass Filter,” in Indian Journal of Science and Technology, vol. 9, no. 33, pp. 1-4, Sep. 2016. SharedIt: and DOI: 10.17485/ijst/2016/v9i33/99505, Publisher: Indian Society for Education and Environment.  http://www.indjst.org/index.php/indjst/article/view/99505

  1.  

Aug. 16

V. Dokania, A. Islam, V. Dixit and S. P. Tiwari, "Analytical Modeling of Wrap-Gate Carbon Nanotube FET With Parasitic Capacitances and Density of States," in IEEE Transactions on Electron Devices, vol. 63, no. 8, pp. 3314-3319, Aug. 2016,    DOI: http://dx.doi.org/10.1109/TED.2016.2581119, SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7502183

  1.  

Jul. 16

Swapnil SouravAmit Krishna DwivediAminul Islam, “Investigating Phase Transform Behavior in Indium Selenide Based RAM and Its Validation as a Memory Element,in Journal of Materials, vol. 2016, pp. 1-7, Jul. 2016, Article ID 6123268, SharedIt: and DOI: http://dx.doi.org/10.1155/2016/6123268

  1.  

Jun. 16

S. Pal and A. Islam, "9-T SRAM Cell for Reliable Ultralow-Power Applications and Solving Multibit Soft-Error Issue," in IEEE Transactions on Device and Materials Reliability, vol. 16, no. 2, pp. 172-182, June 2016. doi: 10.1109/TDMR.2016.2544780, https://doi.org/10.1109/TDMR.2016.2544780, SharedIt:  https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7442565 

  1.  

Apr. 16

S. Pal and A. Islam, "Variation Tolerant Differential 8T SRAM Cell for Ultralow Power Applications," in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. 35, no. 4, pp. 549-558, April 2016. doi: 10.1109/TCAD.2015.2474408, https://doi.org/10.1109/TCAD.2015.2474408, SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7229279 

  1.  

Mar. 16

Manisha Guduri, Shruti Agrawal, Vikash Kumar, Aminul Islam, "Study of FinFET Based Circuit for Ultra-Low Power Operation," in Communications on Applied Electronics (CAE) Journal, Publisher: Foundation of Computer Science (FCS), NY, USA, vol. CCSN2015, No. 1, pp. 25–28, Mar. 2016.  SharedIt: and url: http://www.caeaccess.org/proceedings/ccsn2015/number1/554-1529

  1.  

Mar. 16

A. K. Dwivedi and A. Islam, "Design of magnetic tunnel junction-based tunable spin torque oscillator at nanoscale regime," in IET Circuits, Devices & Systems, vol. 10, no. 2, pp. 121-129,  3 2016.
SharedIt: and doi: https://doi.org/10.1049/iet-cds.2015.0104 , https://ietresearch.onlinelibrary.wiley.com/doi/epdf/10.1049/iet-cds.2015.0104

  1.  

Mar 16

Santashraya Prasad, Amit Krishna Dwivedi, Aminul Islam, "Characterization of AlGaN/GaN and AlGaN/AlN/GaN HEMTs in Terms of Mobility and Subthreshold Slope," in Journal of Computational Electronics, vol. 15, no. 1, pp. 172-180, Mar. 2016, Publisher: Springer US. DOI: 10.1007/s10825-015-0751-8, SharedIt: http://link.springer.com/article/10.1007%2Fs10825-015-0751-8#/page-1

  1.  

Dec. 15

Amit Krishna Dwivedi, A. Islam, “Nonvolatile and robust design of content addressable memory cell using magnetic tunnel junction at nanoscale regime,” in IEEE Transactions on Magnetics, vol. 51, no. 12, pp. 1-13, 17 Dec. 2015, article no.  3402013, DOI:  10.1109/TMAG.2015.2454477, http://dx.doi.org/10.1109/TMAG.2015.2454477, SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7153542  

  1.  

Jul. 15

Arko Mukherjee, Abhijeet Pasumarthy, Aminul Islam, “Design of MEMS Single Pole Double Throw Switch based on PZT,” in International Journal of Scientific and Engineering Research, vol. 6, No. 7, pp. 248 – 251, Jul. 2015. SharedIt: http://www.ijser.org/research-paper-publishing-july-2015_page2.aspx,

  1.  

Jul. 15

A. Tyagi, C. Gopi, P. Baldi and A. Islam, "CNFET-Based 0.1- to 1.2-V DC/DC Boost Converter with Voltage Regulation for Energy Harvesting Applications," in IEEE Transactions on Nanotechnology, vol. 14, no. 4, pp. 660-667, July 2015, DOI: 10.1109/TNANO.2015.2427292, http://dx.doi.org/10.1109/TNANO.2015.2427292, SharedIt:  https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7101282

  1.  

Jun. 15

Manisha Guduri, A. Islam, “Design of 4×4 Wallace Tree Multiplier for Ultralow Power Applications with Hybrid Compressors” in International Journal of Applied Engineering Research, vol. 10, no. 55, pp. 3584–3589, Jun. 2015. Publisher: Research India Publications.  SharedIt: http://www.ripublication.com/Volume/ijaerv10n55spl.htm

  1.  

Jun. 15

Soumitra Pal, Roshani Nipane, Aminul Islam, “Fully differential 10T SRAM Cell,” in International Journal of Applied Engineering Research, vol. 10, no. 55, pp. 502–506, Jun. 2015. Publisher: Research India Publications. SharedIt: http://www.ripublication.com/Volume/ijaerv10n55spl.htm

  1.  

Jun. 15

Soumitra Pal, Shivali Nath, Aminul Islam, “Characterization of Read Decoupled 7T SRAM Cell @ 16-nm Technology Node,” in International Journal of Applied Engineering Research, vol. 10, no. 55, pp. 384–388, Jun. 2015. Publisher: Research India Publications. SharedIt: http://www.ripublication.com/Volume/ijaerv10n55spl.htm

  1.  

Jun. 15

Pragya Srivastava, A. Islam, "CNFET-based design of resilient MCML XOR/XNOR circuit at 16-nm technology node," in Indian Journal of Engineering and Materials Sciences (IJEMS), vol. 22, no. 3, pp. 261 – 267, Jun. 2015. Publisher: National Institute of Science Communication and Information Resources (NISCAIR).  http://nopr.niscpr.res.in/handle/123456789/31748, SharedIt:  https://nopr.niscpr.res.in/bitstream/123456789/31748/1/IJEMS%2022(3)%20261-267.pdf

  1.  

May 15

Soumitra Pal, Malreddy Shekar Reddy, Aminul Islam, “Variation-Tolerant Sub-threshold SRAM Cell Design Technique,” in ARPN Journal of Engineering and Applied Sciences, vol. 10, no. 8, pp. 3597-3603, May. 2015. Publisher:  Asian Research Publishing Network (ARPN),  SharedIt:  http://www.arpnjournals.com/jeas/research_papers/rp_2015/jeas_0515_1969.pdf

  1.  

May 15

Amit Krishna Dwivedi, Abhijeet Pasumarthy, Rishab Mehra, Aminul Islam, “Versatile Noise Suppressed Variable Pulse Voltage Controlled Oscillator,” in International Journal of Applied Engineering Research (IJAER), vol. 10, no. 20, pp. 18633-18638, May. 2015. Research India Publications,  SharedIt: http://www.ripublication.com/Volume/ijaerv10n20spl.htm

  1.  

May 15

V. Dokania and A. Islam, "Circuit-level design technique to mitigate impact of process, voltage and temperature variations in complementary metal-oxide semiconductor full adder cells," in IET Circuits, Devices & Systems, vol. 9, no. 3, pp. 204-212, 5 2015. doi: 10.1049/iet-cds.2014.0167, SharedIt: https://ietresearch.onlinelibrary.wiley.com/doi/epdf/10.1049/iet-cds.2014.0167

  1.  

Mar. 15

Manisha Guduri, Vivek Kumar Agarwal, A. Islam, "Which is the Best 10T Static CMOS Full Adder for Ultralow-Power Applications?" in Journal of VLSI Design Tools & Technology (JoVDTT), vol. 5. No. 1, pp. 45-50, Mar. 2015. SharedIt:  

http://stmjournals.com/index.php?journal=JoVDTT&page=article&op=view&path%5B%5D=5351

  1.  

Mar. 15

Prashant Gupta, Shashank Kumar Ranu, Manish Kumar Pandey, Aminul Islam, "Hybrid CMOS-SET Inverter Design for Improved Performance Using Tied Body-Backgate Technique," in Journal of VLSI Design Tools & Technology (JoVDTT), vol. 5. No. 1, pp. 24-29, Mar. 2015. SharedIt:    http://stmjournals.com/index.php?journal=JoVDTT&page=article&op=view&path%5B%5D=5330

  1.  

Jan. 15

Soumitra Pal, Aminul Islam, “8T Double-Ended Read-Decoupled SRAM Cell,” in International Journal of Computer Applications in Engineering Sciences, vol. 5, no. special issue, pp. 47 – 54, Jan. 2015.

SharedIt: https://www.researchgate.net/publication/281835010_8T_Double-Ended_Read-Decoupled_SRAM_Cell 

  1.  

Jan. 15

Amit Krishna Dwivedi, Kumar Abhijeet Urma, A. Islam, "Trigger Pulse Generator Using Proposed Buffered Delay Model and its Application,” in Active and Passive Electronic Components, vol. 2015, Article ID 920508, pp. 1-9, Jan 2015. Publisher: Hindawi Publishing Corporation, http://dx.doi.org/10.1155/2015/920508

  1.  

May 14

Manish Kumar Pandey, Shashank Kumar Ranu, Aminul Islam, "A new robust and high-performance subthreshold XOR/XNOR circuit," in Journal of Semiconductor Devices and Circuits (JoSDC), vol. 1, no. 1, pp. 1-10, May 2014. Publisher: STM journals.

SharedIt: https://www.researchgate.net/publication/270900973_A_new_robust_and_high-performance_subthreshold_XORXNOR_circuit

  1.  

Aug. 14

Amit Krishna Dwivedi, A. Islam, "Triangular Waveform Generation Using Mixed Signal Modeling," in Journal of VLSI Design Tools & Technology (JoVDTT), vol. 4. No. 2, pp. 8-17, Aug. 2014. Publisher: STM Journals, SharedIt: https://engineeringjournals.stmjournals.in/index.php/JoVDTT/article/view/2926

  1.  

Jul. 14

A. Bhattacharya, A. Islam, "Implementation of MRAM-Based Full Adder for Sleep Mode Applications," Int. J. of Recent Trends in Engineering and Technology, vol. 11, no. 02, pp. 396–403, Jul. 2014. Publisher: ACEEE., SharedIt:  https://www.researchgate.net/publication/270901154_Implementation_of_MRAM-Based_Full_Adder_for_Sleep_Mode_Applications

  1.  

Jun. 14

A. Bhattacharya and A. Islam, “Design and Analysis of Robust Spin Transfer Torque Magnetic Random Access Memory Bitcell Using FinFET,” in Journal of Low Power Electronics, vol. 10, no. 2, pp. 220-227, Jun. 2014. Publisher: American Scientific Publishers. DOI: https://doi.org/10.1166/jolpe.2014.1319, SharedIt: http://www.aspbs.com/jolpe/

  1.  

Feb. 14

Pragya Srivastava, A. Islam, "Robust and Power-Aware Design of CNFET-Based XOR Circuit at 16-nm Technology Node," in International Journal of Advances in Computer Science and Technology (IJACST), vol. 3, no. 2, pp. 23 – 28, Feb. 2014. SharedIt: https://warse.org/pdfs/2014/iccsie2014sp05.pdf, http://warse.org/special-issue-iccdie-2014.html

  1.  

Jul. 13

Mohd. Ajmal Kafeel, Mohd. Hasan, Mohd. Shah Alam, Aminul Islam, “Performance Evaluation of CNFET Based Single-Ended 6T SRAM Cell,” in Wulfenia, vol. 20, no. 7, pp. 364–383, Jul. 2013. SharedIt: http://www.multidisciplinarywulfenia.org

  1.  

May 13

A. Islam, “A Technique for Designing Variation Resilient Subthreshold SRAM Cell,” in IIUM Engineering Journal, vol. 14, no. 1, pp. 52–65, May. 2013, Publisher: Kulliyyah Engineering , International Islamic University Malaysia, SharedIt:  https://journals.iium.edu.my/ejournal/index.php/iiumej/article/view/318/353, http://journals.iium.edu.my/ejournal/index.php/iiumej/issue/view/45

  1.  

Mar. 13

D. Roy, A. K. Singh, R. Anand, A. Islam, “Bit line and storage node decoupled 13T SRAM cell in 22-nm technology node,” in Wulfenia, vol. 20, no. 3, pp. 40–55, Mar. 2013, SharedIt: http://www.multidisciplinarywulfenia.org

  1.  

Jan. 13

S. Kushwaha, D. Kumar, M. Saw, A. Islam, “MTJ-Based Nonvolatile 9T SRAM Cell,” in ACEEE Int. J. of Recent Trends in Engineering and Technology, vol. 8, no. 2, pp. 26–30, Jan. 2013. Publisher: ACEEE. SharedIt:  https://www.researchgate.net/publication/234145314_MTJ-Based_Nonvolatile_9T_SRAM_Cell#fullTextFileContent

  1.  

Nov. 12

A. Imran, M. Hasan, A. Islam and S. A. Abbasi, "Optimized Design of a 32-nm CNFET-Based Low-Power Ultrawideband CCII," in IEEE Transactions on Nanotechnology, vol. 11, no. 6, pp. 1100-1109, Nov. 2012. DOI: 10.1109/TNANO.2012.2212248, http://dx.doi.org/10.1109/TNANO.2012.2212248. SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6263304

  1.  

Sep. 12

A. Islam, Mohd. Hasan, Tughrul Arslan, "Variation Resilient Subthreshold SRAM Cell Design Technique," in International Journal of Electronics, vol. 99, no. 9, pp. 1223-1227, Sep. 2012. Publisher: Taylor & Francis, DOI: 10.1080/00207217.2012.669708, SharedIt: http://dx.doi.org/10.1080/00207217.2012.669708

  1.  

Jun. 12

A. Islam. Mohd. Hasan, "Variability Aware Low Leakage Reliable SRAM Cell Design Technique," in Microelectronics reliability, vol. 52, no. 6, pp. 1247 – 1252, Jun. 2012. Publisher: Elsevier, SharedIt: and DOI: doi:10.1016/j.microrel.2012.01.003, http://dx.doi.org/10.1016/j.microrel.2012.01.003

  1.  

Mar. 12

A. Islam, Mohd. Hasan, “Leakage characterization of 10T SRAM cell,” in IEEE Transactions on Electron Devices, vol. 59, no. 3, pp. 631 – 638, Mar. 2012. DOI: 10.1109/TED.2011.2181387, http://dx.doi.org/10.1109/TED.2011.2181387, SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6140553

  1.  

Feb. 12

A. Islam and Mohd. Hasan, “A Technique to Mitigate Impact of Process, Voltage and Temperature Variations on Design Metrics of SRAM Cell,” in Microelectronics Reliability, vol. 52, no. 2, pp. 405 – 411, Feb. 2012. Publisher: Elsevier, SharedIt: and DOI: doi:10.1016/j.microrel.2011.09.034, http://dx.doi.org/10.1016/j.microrel.2011.09.034

  1.  

Jul. 11

A. Islam, Mohd. Hasan, “Design and Analysis of Power and Variability Aware Digital Summing Circuit,” in Int. J. on Communication, vol. 2, no. 2, pp. 6-14, Jul. 2011.  Publisher: ACEEE. SharedIt:  https://www.semanticscholar.org/paper/Design-and-Analysis-of-Power-and-Variability-Aware-Islam-Hasan/3aefea3dffa0ef43c746038959388ec708e53d0chttps://www.researchgate.net/publication/230774464_Design_and_Analysis_of_Power_and_Variability_Aware_Digital_Summing_Circuit

  1.  

Jun. 11

Islam, Mohd. Hasan, “Variability Analysis of 6T and 7T SRAM Cell in Sub-45nm Technology,” in IIUM Engineering Journal, vol. 12, no. 1, pp. 13–30, Jun. 2011. DOI: https://doi.org/10.31436/iiumej.v12i1

http://journals.iium.edu.my/ejournal/index.php/iiumej/issue/view/23, SharedIt: https://journals.iium.edu.my/ejournal/index.php/iiumej/article/view/25/83

  1.  

Mar. 11

A. Islam, M. W. Akram, Mohd. Hasan, “Energy Efficient and Process Tolerant Full Adder in Technologies Beyond CMOS,” in Int. J. of Recent Trends in Engineering and Technology, vol. 05, no. 01, pp. 1–7, Mar. 2011.  Publisher: ACEEE, SharedIt:  https://www.researchgate.net/publication/233391429_Energy_Efficient_and_Process_Tolerant_Full_Adder_in_Technologies_Beyond_CMOS

  1.  

Feb. 11

A. Islam, Mohd. Hasan, “Dual-Diameter Variation –Immune CNFET-based 7T SRAM Cell,” in Nanosciences and Nanotechnologies: An International Journal (NIJ), vol. 1, no. 1, pp. 1-14, Feb. 2011, Publisher: CSC Journals, Kuala Lumpur Malaysia, http://www.cscjournals.org/library/manuscriptinfo.php?mc=NIJ-3, SharedIt: https://www.cscjournals.org/manuscript/Journals/NIJ/Volume1/Issue1/NIJ-3.pdf

  1.  

Feb. 11

Islam, Mohd. Hasan, “Power optimized variation aware dual-threshold SRAM cell design technique,” in Nanotechnology, Science and Applications, vol. 4, pp. 25 – 33, Feb. 2011. Publisher: Dove Medical Press Limited. DOI: 10.2147/NSA.S15719, http://dx.doi.org/10.2147/NSA.S15719, SharedIt: https://www.dovepress.com/getfile.php?fileID=8789

  1.  

Jan. 11

A. Islam, Mohd. Hasan, “Single-Ended 6T SRAM Cell to Improve Dynamic Power Dissipation by Decreasing Activity Factor,” in The Mediterranean Journal of Electronics and Communications, vol. 7, no. 1, pp. 172–181, Jan. 2011.  Publisher: SoftMotor Ltd. SharedIt: http://www.medjec.com/papers%20archive/index.html

  1.  

Dec. 10

A. Islam, Mohd. Hasan, “Process Variation and Radiation-Immune Single Ended 6T SRAM Cell,” in Int. J. on Signal & Image Processing, vol. 01, no. 03, pp. 37-45, Dec. 2010, Publisher: ACEEE.  SharedIt: https://www.slideshare.net/ideseditor/process-variation-and-radiationimmune-single-ended-6t-sram-cell

 

 

 

CONFERENCE PAPERS

S. No.

Date

Authors/title with conference name/page nos./ date/year of publication

 

  1.  

 

Arundhati Shreya, Shagufta Parveen Asif Akhtar, Md. Waseem Akram and Aminul Islam “Impact of Bias-Voltage on Spin Polarization and Tunneling Magnetoresistance in CoFeB/WSe?/CoFeB Magnetic Tunnel Junction” in IEEE International Conference on Intelligent and Sustainable Electronics &
Computing Technologies 2026 (INSECT-2026)
,  India  (Accepted and registered).

  1.  

 

Gadipalli Varun Sai Kumar, Shagufta Parveen Asif Akhtar,  Sanskar Kumar Karn, Saisha Gandagatri , Aminul Islam, and Md. Waseem Akram Effect of Barrier Layer Variation on Tunnel Magnetoresistance in LiCrSi-based Magnetic Tunnel Junctions in IEEE International Conference on International Conference on Signal Analysis for Smart Systems SIGNASS-2026 (Kolkata section),  India  (Presented).

  1.  

 

Sanskar Kumar Karn, Shagufta Parveen Asif Akhtar, Saisha Gandagatri , Gadipalli Varun Sai Kumar, Md. Waseem Akram, and Aminul Islam, “LiCrSi/MgO/LiCrSi Magnetic Tunnel Junctions Based on Spin-Gapless Semiconductors with High Room-Temperature TMR” in IEEE 2nd International Conference on Sustainability and Technological Advancements in Engineering Domain ( SUSTAINED – 2026), India, submitted. (Presented).

  1.  

Mar. 26

M. Kumar, J. Jagathkar, K. Koley and A. Islam, "Innovations and Future Directions in Materials for Shielding Spacecraft and Electronic Systems," 2025 IEEE International Conference on Electrical, Electronics, Communication and Computers (ELEXCOM), Dhanbad, India, 26 Mar. 2026, pp. 1-6, doi: 10.1109/ELEXCOM67950.2025.11451211. https://doi.org/10.1109/ELEXCOM67950.2025.11451211

  1.  

Feb. 26

S. P. A. Akhtar, S. Prasad and A. Islam, "First-Principles Design and Analysis of Cr2O3-Based Antiferromagnetic Tunnel Junctions (AFMTJs) for Spintronic Applications," 2025 IEEE DELCON - International Conference on Recent Smart Technologies in Engineering for Sustainable Development, New Delhi, India, 2025, pp. 1-7, doi: 10.1109/DELCON68055.2025.11400107, published on 27 Feb. 2026.  https://doi.org/10.1109/DELCON68055.2025.11400107

  1.  

Dec. 25

Mukesh Kumar, Jatin Jagathkar, Kalyan Koley, and Aminul Islam Exploring the New Era of Post-MOSFET Devices for High-Speed and Computational Performance, ” in 2025  International Conference on Recent Trends in Intelligent Computing, Manufacturing and Electronics (rTime-2025) Ranchi, India.  (Accepted).

  1.  

 

Saisha Gandagatri, Shagufta Parveen Asif Akhtar, Sanskar Kumar Karn, Gadipalli Varun Sai Kumar, Aminul Islam, and Md. Waseem Akram, “Temperature-Invariant TMR in Fe?Si/2L-WSe?/Fe?Si Magnetic Tunnel Junctions from First-Principles Simulations,” in IEEE International Conference on Communication Networks and Computing, Sonbhadra, India, (Presented).

  1.  

Jan. 26

P. Kumar Gautam, M. Pandey, A. Pandey and A. Islam, "Comparative Analysis of CAM Cells," 2025 International Conference on Communication and Smart Devices (ICCoSD), Ranchi, India, 2025, pp. 1-5, doi: 10.1109/ICCoSD66074.2025.11348206, https://doi.org/10.1109/ICCoSD66074.2025.11348206

  1.  

Jan. 26

J. Jagathkar, Mukesh Kumar, P. R. Laxmankumar, S. Kumar, P. Ghosh and A. Islam, "Exploring Negative Differential Resistance in an Extended Source T-Shaped Channel NCTFET," 2025 International Conference on Communication and Smart Devices (ICCoSD), Ranchi, India, 2025, pp. 1-6, doi: 10.1109/ICCoSD66074.2025.11348471, https://doi.org/10.1109/ICCoSD66074.2025.11348471

  1.  

Jan. 26

Mukesh Kumar, K. Koley and A. Islam, "High-Performance SS-DP-DMG-TFET with Suppressed Ambipolar Behavior and Enhanced DC and RF Characteristics," 2025 International Conference on Communication and Smart Devices (ICCoSD), Ranchi, India, 2025, pp. 1-6, doi: 10.1109/ICCoSD66074.2025.11348478, https://doi.org/10.1109/ICCoSD66074.2025.11348478

  1.  

Jan. 26

Mukesh Kumar. Kumar, Satyam, A. Mritunjay, S. Kumar, Utkarsh and A. Islam, "Emerging Potential of GaN HEMTs: Advancements, Challenges, and Future Prospects," 2025 International Conference on Communication and Smart Devices (ICCoSD), Ranchi, India, 2025, pp. 1-6, doi: 10.1109/ICCoSD66074.2025.11348371, https://doi.org/10.1109/ICCoSD66074.2025.11348371

  1.  

Jan. 26

Mukesh Kumar, C. Rani, A. Bharti, H. Ranjan, P. N. Suman and A. Islam, "Exploring FinFET Technology: From Short-Channel Effect Mitigation to Market Trends," 2025 International Conference on Communication and Smart Devices (ICCoSD), Ranchi, India, 2025, pp. 1-6, doi: 10.1109/ICCoSD66074.2025.11348614, https://doi.org/10.1109/ICCoSD66074.2025.11348614

  1.  

Aug. 25

Mukesh Kumar et al., "Investigation of FinFET in terms of Device Design, Performance, and its Challenges," 2025 Devices for Integrated Circuit (DevIC), Kalyani, India, 2025, pp. 166-171, doi: 10.1109/DevIC63749.2025.11012504, https://doi.org/10.1109/DevIC63749.2025.11012504

  1.  

Aug. 25

D. Gandhi, Mukesh Kumar, S. Kumar, S. Prasad and A. Islam, "Study of Temperature Dependence on DC/RF Parameters of Extended Channel Gate Stacked Heterojunction TFET," 2025 Devices for Integrated Circuit (DevIC), Kalyani, India, 2025, pp. 107-112, doi: 10.1109/DevIC63749.2025.11012561, https://doi.org/10.1109/DevIC63749.2025.11012561

  1.  

Nov. 24

Sahil Kumar,  Utkarsh Singh, Swapnendu Mondal,  Harsh Ranjan,  Shashank Kumar Dubey,  Soumak Nandi, Mukesh Kumar, Aminul Islam, “Analysis of AlGaN/GaN Based HEMT with 3-Step Gate Field Plate for High Power Applications,”  in 2024 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON), Kolkata, India, 2024, 23-24 Nov. 2024, pp. 241-245, doi: https://doi.org/10.1109/EDKCON62339.2024.10870612

  1.  

Nov. 24

Mukesh Kumar, A. Chotalia, S. Singh, J.J. Kerketta, C. Rani, V. Nenavath, S. Prasad, and Aminul Islam, “ Design and Investigation of Ge Source Hetero-Dielectric L-shaped TFET for Low Power Applications,” in 2024 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON), Kolkata, India, 2024, 23-24 Nov. 2024, pp. 326-431, doi: https://doi.org/10.1109/EDKCON62339.2024.10870807

  1.  

Apr. 23

S. Nandi, S. K. Dubey, M. Kumar and A. Islam, "Analysis of Source, Drain and Gate Field Plated AlGaN/GaN Based HEMT for High Breakdown Voltage," 2023 IEEE Devices for Integrated Circuit (DevIC), Kalyani, India, 07-08 April 2023, pp. 526-530, doi: 10.1109/DevIC57758.2023.10135024.  https://doi.org/10.1109/DevIC57758.2023.10135024, SharedIt:  https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10135024  

  1.  

Nov. 22

M. Pandey and A. Islam, "Single Event Upset Mechanism in SRAM Latch and Its Circuit-Level prevention Technique," 2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON), Kolkata, India, 2022, 26-27 Nov. 2022, pp. 540-546, doi: 10.1109/EDKCON56221.2022.10032910. https://doi.org/10.1109/EDKCON56221.2022.10032910, SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10032910

  1.  

Nov. 22

M. Pandey and A. Islam, "Radiation Tolerant by Design 12-Transistor Static Random Access Memory," 2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON), Kolkata, India, 2022, 2022, 26-27 Nov. 2022, pp. 534-539, doi: 10.1109/EDKCON56221.2022.10032834. https://doi.org/10.1109/EDKCON56221.2022.10032834, SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10032834 

  1.  

Nov. 22

S. K. Dubey and A. Islam, "Analysis of AlGaN/GaN Based HEMT for Millimeter-Wave Applications," 2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON), Kolkata, India, 2022, 26-27 Nov. 2022, pp. 547-552, doi: 10.1109/EDKCON56221.2022.10032879. https://doi.org/10.1109/EDKCON56221.2022.10032879,  SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10032879

  1.  

May 21

S. R. Nayini, K. Sai Kushal Gella, S. K. Dubey, M. Guduri and A. Islam, "Robust Design of Noise Tolerant 2-Phase Non Overlapping Clock Generating Circuit," 2021 Devices for Integrated Circuit (DevIC), 19-20 May 2021, pp. 211-215, doi: 10.1109/DevIC50843.2021.9455843.  https://doi.org/10.1109/DevIC50843.2021.9455843, SharedIt:  https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9455843 

  1.  

May 21

S. K. Dubey and A. Islam, "AlGaN/GaN HEMT with Recessed T-Gate and Floating Metal for High Power Applications," 2021 Devices for Integrated Circuit (DevIC), 19-20 May 2021, pp. 216-220, doi: 10.1109/DevIC50843.2021.9455871. https://doi.org/10.1109/DevIC50843.2021.9455871, SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9455871

  1.  

May 21

J. P. Kotni, M. Pandey, S. Prasad and A. Islam, "Radiation-Hardened Low Read Delay 12T-SRAM Cell for Space Applications," 2021 Devices for Integrated Circuit (DevIC), 19-20 May 2021, pp. 512-516, doi: 10.1109/DevIC50843.2021.9455796. https://doi.org/10.1109/DevIC50843.2021.9455796, SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9455796 

  1.  

Oct. 18

Krishnpriya Sinha, Pawan Kumar Sahu, Ritesh Ranjan, Shashank Kumar Dubey, Aminul Islam, “Investigation of impact of high Al content with AlN/GaN HEMT,” 7th International Conference on Computing, Communication and Sensor Network (CCSN2018), Kolkata, 27-28 Oct. 2018, pp. 94-98.

  1.  

Oct. 18

Subhankar Bose, Soumitra Pal, Aminul Islam, “An SRAM Cell design for Wireless Sensor Network IoT applications,” 7th International Conference on Computing, Communication and Sensor Network (CCSN2018), Kolkata, 27-28 Oct. 2018, pp. 131-137.

  1.  

Oct. 18

Nilay Aishwarya, Abhijeet Nayak, Subhankar Bose, Vikash Kumar, and Aminul Islam, “A Memristor Emulator Circuit Using CNFET,” 7th International Conference on Computing, Communication and Sensor Network (CCSN2018), Kolkata, 27-28 Oct. 2018, pp. 248-252.

  1.  

May 18

Ashish Kumar, Pinki Kumari, Priya Murmu, Santashraya Prasad, Aminul Islam, "Indium Phosphide based High Electron Mobility Transistor," 5th International Conference on Microelectronics, Circuits and Systems (Micro2018), Bhubaneswar, Odisha, India, 19-20 May 2018, vol. 2, pp. 10-13.

  1.  

May 18

Rohan Kumar, Om Prakash, Kumar Ankit, Vikash Kumar, Shashank Kumar Dubey and Aminul Islam, "Performance Analysis of CMOS LNA Using Active Inductors," 5th International Conference on Microelectronics, Circuits and Systems (Micro2018), Bhubaneswar, Odisha, India, 19-20 May 2018, vol. 2, pp. 43-46.

  1.  

May 18

Anushka Gon, Utkarsh Raj, Vikash Kumar and Aminul Islam, "Fractional Order Filter Design Using Two VDTA," 5th International Conference on Microelectronics, Circuits and Systems (Micro2018), Bhubaneswar, Odisha, India, 19-20 May 2018, vol. 2, pp. 47-50.

  1.  

May 18

Srinithya Nagiri, Sananya Majumder, Riya, Soumitra Pal, CM Roy and Aminul Islam, "CNFET based RRAM cell using memristor as memory element," 5th International Conference on Microelectronics, Circuits and Systems (Micro2018), Bhubaneswar, Odisha, India, 19-20 May 2018, vol. 2, pp. 83-87.

  1.  

May 18

Sesha Sree, Rashmi Virupaksha, Rishav Raj, Santashraya Prasad, Manisha Guduri, Aminul Islam, "Characterization of AlInN and GaN Based HEMT on SiC Using AlN as Interfacial Spacer Layer and Si3N4 Passivation Layer," 5th International Conference on Microelectronics, Circuits and Systems (Micro2018), Bhubaneswar, Odisha, India, 19-20 May 2018, vol. 2, pp. 118-123.

  1.  

May 18

Vivek Gupta, Soumitra Pal, Aminul Islam, "Robust and Highly Stable SRAM cell Design for Low Power Application," 5th International Conference on Microelectronics, Circuits and Systems (Micro2018), Bhubaneswar, Odisha, India, 19-20 May 2018, vol. 1, pp. 43-48.

  1.  

May 18

Priya Murmu, Pinki Kumari, Ashish Kumar, Shashank Kumar Dubey, Santashraya Prasad, Aminul Islam, "Investigation on characteristic properties of AlGaN/GaN HEMT using Sapphire, Si and SiC substrate materials," 5th International Conference on Microelectronics, Circuits and Systems (Micro2018), Bhubaneswar, Odisha, India, 19-20 May 2018, vol. 1, pp. 104-108.

  1.  

May 18

Indrajit Pal, Sagnik Saha, Vikash Kumar, Nilay Aishwarya, Abhijeet Nayak and Aminul Islam, "A Novel VDTA Based Memristor Emulator Circuit," 5th International Conference on Microelectronics, Circuits and Systems (Micro2018), Bhubaneswar, Odisha, India, 19-20 May 2018, vol. 1, pp. 139-141.

  1.  

Mar. 18

S. Nagiri, S. Majumder, Riya and A. Islam, "Design of low power RRAM cell using CNFET," 2018 4th International Conference on Recent Advances in Information Technology (RAIT), Dhanbad, 15-17 March 2018, pp. 1-5. doi: 10.1109/RAIT.2018.8389016,  https://doi.org/10.1109/RAIT.2018.8389016, SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8389016

  1.  

Dec. 17

V. Rashmi, Ch. Seshasaisree, Manisha Guduri and Aminul Islam, “Design and Analysis of Logic Gates Using Quantum Dot Cellular Automata (QCA),” 4th International Conference on Computing, Communication and Sensor Network (CCSN-2017), Kolkata, 30-31, Dec. 2017, vol. 2, pp. 50-55.

  1.  

Dec. 17

Pragati Thakur, Nikita Gupta, Shashank Kumar Dubey, Aminul Islam, “Design of Nonvolatile MRAM Bitcell Using FinFET,” 4th International Conference on Computing, Communication and Sensor Network (CCSN-2017), Kolkata, 30-31, Dec. 2017, vol. 2, pp. 38-43.

  1.  

Dec. 17

Shashank Kumar Dubey, Vikash Kumar, Sabyasachi Mishra, Ashish Singh, Prem Kumar and Aminul Islam, “A CMOS Programmable CCCII+ Based Active Grounded Inductor,” 4th International Conference on Computing, Communication and Sensor Network (CCSN-2017), Kolkata, 30-31, Dec. 2017, vol. 2, pp. 18-21.

  1.  

Dec. 17

Vivek Gupta, Soumitra Pal and Aminul Islam, “Memristor-based Low-Power Compact Synchronous Flip Flops: Design and Analysis,” 4th International Conference on Computing, Communication and Sensor Network (CCSN-2017), Kolkata, 30-31, Dec. 2017, vol. 1, pp. 77-82.

  1.  

Dec. 17

Lakshmi Pujitha Patnaik, Spurthi Felisha, Vikash Kumar and Aminul Islam, “A New Voltage-mode Biquad Filter Configuration using Voltage Differencing Transconductance Amplifier,” 4th International Conference on Computing, Communication and Sensor Network (CCSN-2017), Kolkata, 30-31, Dec. 2017, vol. 1, pp. 26-28.

  1.  

Dec. 17

Anushka Gon, Vikash Kumar, Saumya Pandey and Aminul Islam, “A Current-Mode Universal Filter Design using Single VDTA,” 4th International Conference on Computing, Communication and Sensor Network (CCSN-2017), Kolkata, 30-31, Dec. 2017, vol. 1, pp. 13-15.

  1.  

Dec. 17

A. Oraon, S. Shreya, R. Kumari and A. Islam, "A double trench 4H — SiC MOSFET as an enhanced model of SiC UMOSFET," 2017 7th International Symposium on Embedded Computing and System Design (ISED), Durgapur, 18-20, Dec. 2017, pp. 1-5.  doi: 10.1109/ISED.2017.8303939, https://doi.org/10.1109/ISED.2017.8303939, SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8303939  

  1.  

Dec. 17

N. Gupta, P. Thakur, S. K. Dubey and A. Islam, "Design of nonvolatile MRAM bitcell," 2017 7th International Symposium on Embedded Computing and System Design (ISED), Durgapur, India, 2017, pp. 1-4, doi: 10.1109/ISED.2017.8303917. https://doi.org/10.1109/ISED.2017.8303917, SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8303917 

  1.  

Nov. 17

K. Ankit, R. Kumar, O. Prakash, A. Sengupta, M. Guduri and A. Islam, "Study of Al0.22Ga0.78As/In0.18Ga0.82As/GaAs PHEMT with delta doping and lower Al mole fraction," 2017 International Conference on Multimedia, Signal Processing and Communication Technologies (IMPACT), Aligarh, 24-26 Nov. 2017, pp. 118-122. doi: 10.1109/MSPCT.2017.8363987,  https://doi.org/10.1109/MSPCT.2017.8363987, SharedIt:  https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8363987  

  1.  

Nov. 17

S. Prasad, M. Guduri and A. Islam, "High breakdown (958 V) low threshold GaN HEMT," 2017 International Conference on Multimedia, Signal Processing and Communication Technologies (IMPACT), Aligarh, 24-26 Nov. 2017, pp. 94-96. doi: 10.1109/MSPCT.2017.8363981. SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8363981  https://doi.org/10.1109/MSPCT.2017.8363981

  1.  

Jun.17

A. K. Dwivedi, A. Mal and A. Islam, "Analysis of various delay elements @ 16-nm technology node," 2017 International Conference on Intelligent Computing and Control (I2C2), Coimbatore, 23-24 June 2017, pp. 1-6.
doi: 10.1109/I2C2.2017.8321786, SharedIt:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8321786, https://doi.org/10.1109/I2C2.2017.8321786

  1.  

Jun. 17

Riya, Sananya Majumder, Vikash Kumar, and Aminul Islam, “Single Input Three Output Filter Design using VDVTA,” in 4th International Conference on Microelectronics, Circuits and Systems (Micro2017), Darjeeling, India, 3-4 Jun. 2017, vol. 1, pp. 180-182.

  1.  

Jun.17

N. S. Ranjan, Arko Mukherjee, Harshit Sinha,  Santashraya Prasad, Aminul Islam, "Optimal Design of Nonvolatile CAM Cell with Magnetic Tunnel Junction," in 4th International Conference on Microelectronics, Circuits and Systems (Micro2017), Darjeeling, India, 3-4 Jun. 2017,   vol. 2, pp. 82-86.

  1.  

Jun.17

Ankan Dutta, Yashdeep Singh, Agnish Mal, Vikash Kumar and Aminul Islam, "Voltage and Temperature Variability Performance of CMOS Active Inductors," 4th International Conference on Microelectronics, Circuits and Systems (Micro2017), Darjeeling, India, 3-4 Jun. 2017, vol. 1, pp. 57-60.

  1.  

Jun.17

Shruti Agrawal, Chandramauleshwar Roy, B.B. Pal, Aminul Islam, "Design of Low Power 8T SRAM Cell," 4th International Conference on Microelectronics, Circuits and Systems (Micro2017), Darjeeling, India, 3-4 Jun. 2017, vol. 2, pp. 50-53.

  1.  

Jun.17

Shruti Agrawal, Chandramauleshwar Roy, B.B Pal, Aminul Islam, "10T SRAM Cell With Reduced Leakage Power," 4th International Conference on Microelectronics, Circuits and Systems (Micro2017), Darjeeling, India, 3-4 Jun. 2017,   vol. 2, pp. 159-162.

  1.  

Mar. 17

A. Chitransh, S. Moonka, A. Priya, S. Prasad, A. Sengupta and A. Islam, "Analysis of breakdown voltage of a field plated High Electron Mobility Transistor," 2017 Devices for Integrated Circuit (DevIC), Kalyani, India, 2017, pp. 167-169. SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8073929,
doi: 10.1109/DEVIC.2017.8073929
, https://doi.org/10.1109/DEVIC.2017.8073929

  1.  

Mar. 17

A. Sengupta and A. Islam, "Performance comparison of AlGaN/GaN HFET with sapphire and 4H-SiC substrate," 2017 Devices for Integrated Circuit (DevIC), Kalyani, India, 2017, pp. 190-195.
doi: 10.1109/DEVIC.2017.8073934
,
https://doi.org/10.1109/DEVIC.2017.8073934  SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8073934

  1.  

Mar. 17

S. Chatterjee, A. Sengupta, S. Kundu and A. Islam, "Analysis of AlGaN/GaN high electron mobility transistor for high frequency application," 2017 Devices for Integrated Circuit (DevIC), Kalyani, India, 2017, pp. 196-199.
doi: 10.1109/DEVIC.2017.8073935
, https://doi.org/10.1109/DEVIC.2017.8073935, SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8073935

  1.  

Mar. 17

S. Moonka, A. Priya, A. Chitransh, S. Prasad, A. Sengupta and A. Islam, "Analysis of Al0.22Ga0.78As/In0.18Ga0.82As/GaAs Pseudomorphic HEMT device with higher conductivity," 2017 Devices for Integrated Circuit (DevIC), Kalyani, India, 2017, pp. 360-363.
doi: 10.1109/DEVIC.2017.8073969
, https://doi.org/10.1109/DEVIC.2017.8073969, SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8073969 

  1.  

Mar. 17

A. Priya, S. Moonka, A. Chitransh, S. Prasad, A. Sengupta and A. Islam, "Development of HEMT device with surface passivation for a low leakage current and steep subthreshold slope," 2017 Devices for Integrated Circuit (DevIC), Kalyani, India, 2017, pp. 364-367.
doi: 10.1109/DEVIC.2017.8073970
, https://doi.org/10.1109/DEVIC.2017.8073970, SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8073970    

  1.  

Mar. 17

R. Mehra, A. Mal, A. K. Dwivedi and A. Islam, "Compact 6T design of voltage controlled tunable resistor for high frequency applications," 2017 Devices for Integrated Circuit (DevIC), Kalyani, India, 2017, pp. 578-583.
doi: 10.1109/DEVIC.2017.8074017,
https://doi.org/10.1109/DEVIC.2017.8074017, SharedIt:  https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8074017  

  1.  

Mar. 17

D. Bharti and A. Islam, "Performance improvement in 4H-SiC UMOSFET with HfO2/Al2O3 gate dielectric stack," 2017 Devices for Integrated Circuit (DevIC), Kalyani, India, 2017, pp. 804-807.
doi: 10.1109/DEVIC.2017.8074064,
https://doi.org/10.1109/DEVIC.2017.8074064, SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8074064 

  1.  

Dec. 16

 

Amit Krishna Dwivedi, Sarika Tyagi, Basab Bijoy Pal, Aminul Islam, “Compact Design of Trigger Pulse Generator Circuit Using Delay Element and its potential Applications,” 5th International Conference on Computing, Communication and Sensor Network (CCSN-2016), Kolkata, India, Dec. 24-25, 2016, vol. 2, pp. 177– 181.

  1.  

Dec. 16

Chandaramauleshwar Roy, Aminul Islam, “Ultra Low Power Differential 7T SRAM Cell at 16 nm Technology node,” 5th International Conference on Computing, Communication and Sensor Network (CCSN-2016), Kolkata, India, Dec. 24-25, 2016, vol. 2, pp. 102– 106.

  1.  

Dec. 16

 

Manisha Guduri, Ch.Seshasaisree, V. Rashmi and Aminul Islam, “FDSOI device modeling @ 32 nm technology node for designing ultra-low power circuits,” 5th International Conference on Computing, Communication and Sensor Network (CCSN-2016), Kolkata, India, Dec. 24-25, 2016, vol. 2, pp. 61– 65.

  1.  

Dec. 16

Divya Thakur, Srinithya Nagiri, Chandaramauleshwar Roy, Aminul Islam, “Comparative study of various 8T SRAM Cells,” 5th International Conference on Computing, Communication and Sensor Network (CCSN-2016), Kolkata, India, Dec. 24-25, 2016, vol. 2, pp. 42– 46.

  1.  

Dec. 16

Indrajit Pal, Aminul Islam, “Novel Delay-Resilient Dynamic Schmitt Trigger Logic,” 5th International Conference on Computing, Communication and Sensor Network (CCSN-2016), Kolkata, India, Dec. 24-25, 2016, vol. 1, pp. 95– 100.

  1.  

Dec. 16

Arko Mukherjee, Harshit Sinha, Aminul Islam, “A Novel Concept of Metal-Piezo Thermal Sensor and Energy Harvester,” 5th International Conference on Computing, Communication and Sensor Network (CCSN-2016), Kolkata, India, Dec. 24-25, 2016, vol. 2, pp. 37– 41.

  1.  

Dec. 16

Sagnik Saha, Soham Banerjee, Chandaramauleshwar Roy, Aminul Islam, “Comparative analysis of 7T SRAM cells in subthreshold regime at 16 nm technology node,” 5th International Conference on Computing, Communication and Sensor Network (CCSN-2016), Kolkata, India, Dec. 24-25, 2016, vol. 1, pp. 79– 82.

  1.  

Dec. 16

 

Rishav Raj, Ashish Kumar, A. Islam, “Characterization of AlInN and GaN Based HEMT Using AlN as Interfacial Spacer Layer and Si3N4 Passivation Layer,” 5th International Conference on Computing, Communication and Sensor Network (CCSN-2016), Kolkata, India, Dec. 24-25, 2016, vol. 2, pp. 6– 10.

  1.  

Dec. 16

 

Pratyush Dwivedi, Krishna Kumar, Rishab Mehra, Aminul Islam, “Analysis and Characterization of a Titanium Oxide Memristor,” 5th International Conference on Computing, Communication and Sensor Network (CCSN-2016), Kolkata, India, Dec. 24-25, 2016, vol. 2, pp. 1– 5.

  1.  

Jul.16

Manisha Guduri, Sananya Majumder, Riya, Aminul Islam, "Circuit Level Power Reduction Techniques for Robust Carry-Skip Adder Circuit," International Conference on Microelectronics, Circuits and Systems (Micro2016), Kolkata, India, 9-10 Jul. 2016, pp. 410-415.

  1.  

Jul.16

Vikash Kumar, Aminul Islam, "Design of Active Grounded Inductor Based Bandpass Filter for Analog Signal Processing Applications," International Conference on Microelectronics, Circuits and Systems (Micro2016), Kolkata, India, 9-10 Jul. 2016, pp. 360-362.

  1.  

Jul.16

Amresh Kumar, Aminul Islam, "Performance Evaluation of D Flip-Flop Across 3 Different Technologies – MOSFET, CNFET and FinFET," International Conference on Microelectronics, Circuits and Systems (Micro2016), Kolkata, India, 9-10 Jul. 2016, pp. 168-172.

  1.  

Jul.16

Ankan Dutta, Yashdeep Singh, Vikash Kumar and Aminul Islam, "Comparative Analysis of Delay and Variability of D Flip-Flops," International Conference on Microelectronics, Circuits and Systems (Micro2016), Kolkata, India, 9-10 Jul. 2016, pp. 144-147.

  1.  

Jul.16

Indranil Chatterjee, Lakshya Jain, Aminul Islam, "Analysis of PPV-Based Organic FET having Au Source-Drain Contacts for Obtaining Output and Transconductance Characteristics, "International Conference on Microelectronics, Circuits and Systems (Micro2016), Kolkata, India, 9-10 Jul. 2016, pp. 135-138.

  1.  

Mar. 16

Manisha Guduri, Sudip Kundu, Aminul Islam, "Investigation on Electrical Characteristics of FDSOI Device for Ultra-Low Power Operation," IEEE International Conference on Recent Advances in Information Technology (RAIT-2016), ISM, Dhanbad, India, Mar. 03-05, 2016, pp.  534 - 536. DOI:  10.1109/RAIT.2016.7507957http://dx.doi.org/10.1109/RAIT.2016.7507957, SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7507957

  1.  

Mar. 16

Sushant Agrawal, Vikash Kumar, Nitin Anand, Vivek Kumar Agarwal, Aminul Islam, "Development of Data Acquisition System and Data Analysis Technique for Automotive Applications," IEEE World Conference on Futuristic Trends in Research and Innovation for Social Welfare (Startup Conclave-2016), Coimbatore Coimbatore, India, Feb. 29-Mar. 01, 2016, pp. 1-4. DOI: 10.1109/STARTUP.2016.7583954http://dx.doi.org/10.1109/STARTUP.2016.7583954, SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7583954  

  1.  

Jan. 16

Agnish Mal, Amit Krishna Dwivedi, Aminul Islam, "A Comparative Analysis of Various Programmable Delay Elements using Predictive Technology Model," International Conference on Microelectronics, Computing and Communication (MicroCom 2016), NIT, Durgapur, India, Jan. 23-25, 2016, pp.  1 - 5. Publisher: IEEE, Date Added to IEEE Xplore: 28 Jul. 2016, pp. 1-5,   DOI:  10.1109/MicroCom.2016.7522456http://dx.doi.org/10.1109/MicroCom.2016.7522456,  SharedIt:  https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7522456

  1.  

Jan. 16

Saurav Kumar, Vikash Kumar, Aminul Islam, "Characterisation of Field Plated High Electron Mobility Transistor," International Conference on Microelectronics, Computing and Communications (MicroCom 2016), NIT, Durgapur, India, Jan. 23-25, 2016, pp.  1 - 3. Publisher: IEEE, Date Added to IEEE Xplore: 28 Jul. 2016, DOI: 10.1109/MicroCom.2016.7522455, http://dx.doi.org/10.1109/MicroCom.2016.7522455, SharedIt:  https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7522455

  1.  

Jan. 16

P. Dwivedi, K. Kumar and A. Islam, "Comparative study of subthreshold leakage in CNFET & MOSFET @ 32-nm technology node," 2016 International Conference on Microelectronics, Computing and Communications (MicroCom), Durgapur, 2016, pp. 1-5.  Publisher: IEEE, Date Added to IEEE Xplore: 28 Jul. 2016, DOI:  10.1109/MicroCom.2016.7522453http://dx.doi.org/10.1109/MicroCom.2016.7522453, SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7522453

  1.  

Dec. 15

Chandaramauleshwar Roy, Aminul Islam, "Low Power Single-Ended 7T SRAM Cell at 16 nm Technology node," International Conference on Computing, Communication and Sensor Network (CCSN-2015), Kolkata, India, Dec. 24-25, 2015, vol. 2, pp. 56 – 60.

  1.  

Dec. 15

Manisha G, Aminul Islam, "Device Sizing for Minimum Energy Operation of CMOS Inverter in Deep Subthreshold Region for Ultra Low Power Applications," "International Conference on Computing, Communication and Sensor Network (CCSN-2015), Kolkata, India, Dec. 24-25, 2015, vol. 2, pp. 66–70.

  1.  

Dec. 15

Rishab Mehra, Aminul Islam, "Variability Analysis of CS Amplifier @ 45 nm Technology Node," International Conference on Computing, Communication and Sensor Network (CCSN-2015), Kolkata, India, Dec. 24-25, 2015, vol. 1, pp. 26–31.

  1.  

Dec. 15

Sarika Tyagi, Amit Krishna Dwivedi, Basab Bijoy Pal, Animul Islam, "Threshold Voltage Extraction Techniques for Device @ 16 nm Technology Node," in 2015 International Conference on Smart Sensors and Systems (IC-SSS), M.S. Ramaiah Institute of Technology, Bangalore, India, Dec. 21-23, 2015, pp. 1 – 6. Publisher: IEEE, date added to IEEE Xplore 9 Mar. 2017, Print on Demand (PoD) ISBN: 978-1-4673-9329-4, DOI: 10.1109/SMARTSENS.2015.7873598, https://doi.org/10.1109/SMARTSENS.2015.7873598, SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7873598   

  1.  

Dec. 15

Sarika Tyagi, Amit Krishna Dwivedi, Animul Islam, "Revisiting Performance of Various Delay Elements to Realize a Trigger Pulse Generator," International conference on smart sensors and systems (IC-SSS-2015), M.S. Ramaiah Institute of Technology, Bangalore, India, Dec. 21-23, 2015, pp. 1 – 6. Publisher: IEEE, date added to IEEE Xplore 9 Mar. 2017, Print on Demand (PoD) ISBN: 978-1-4673-9329-4, DOI:  10.1109/SMARTSENS.2015.7873605, https://doi.org/10.1109/SMARTSENS.2015.7873605, SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7873605    

  1.  

Dec. 15

Anubhav Sinha, Vikash Kumar, Aminul Islam, "Low-Power 9T Subthreshold SRAM Cell with Single-Ended Write Scheme," 12th IEEE India International Conference (INDICON 2015), Jamia Millia Islamia, New Delhi, India, Dec. 17-20, 2015, pp. 1 – 6. Print 978-1-4673-7398-2. DOI:  10.1109/INDICON.2015.7443137, SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7443137, https://doi.org/10.1109/INDICON.2015.7443137 

  1.  

Dec. 15

V. Kumar, R. K. Prinshu, Y. Singh and A. Islam, "Design of CNFET based charge pump for RF energy harvesting applications," 2015 Annual IEEE India Conference (INDICON), New Delhi, 2015, pp. 1-3. Print 978-1-4673-7398-2. DOI:  10.1109/INDICON.2015.7443153, http://dx.doi.org/10.1109/INDICON.2015.7443153, SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7443153

  1.  

Nov. 15

Manish Kumar Pandey, Shashank Kumar Ranu, Prashant Gupta, Aminul Islam, “7-transistor 2-memristor based non-volatile static random access memory cell design,” in IEEE International Conference on Green Engineering and Technologies (IC-GET 2015), Karpagam College of Engineering, Coimbatore, Tamilnadu, India, Nov. 27, 2015, pp. 1 – 4. INSPEC Accession Number: 15936749, DOI:  10.1109/GET.2015.7453861, https://doi.org/10.1109/GET.2015.7453861, SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7453861

  1.  

Oct. 15

Abhijeet Pasumarthy, Harshit Sinha, Aminul Islam, “Electrothermally Actuated MEMS Based Gecko Foot for Robotics,” in COMSOL conference 2015, Hyatt Regency, Pune, Maharashtra, India, Oct. 29-30, 2015, pp. 1–5, DOI: http://www.comsol.com/paper/download/296881/pasumarthy_paper.pdf

  1.  

Sep. 15

Harsh Choudhary, Amresh Kumar, Aminul Islam, “Propagation Delay and its Robustness Study of Inverter Topologies,” in Proc. IEEE Int. conf. on Reliability, Infocom technologies and Optimization (ICRITO) (Trends and Future Directions), Amity University, Noida, Sep. 2-4, 2015, pp. 1 – 6. Print DOI:   10.1109/ICRITO.2015.7359332http://dx.doi.org/10.1109/ICRITO.2015.7359332,  SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7359332

  1.  

Sep. 15

Himanshu Kumar, Amresh Kumar, Aminul Islam, “Comparative Analysis of D Flip-Flops in Terms of Delay and its Variability,” in Proc. IEEE Int. conf. on Reliability, Infocom technologies and Optimization (ICRITO) (Trends and Future Directions), Amity University, Noida, Sep. 2-4, 2015, pp. 1 – 6. DOI:  10.1109/ICRITO.2015.7359339http://dx.doi.org/10.1109/ICRITO.2015.7359339, SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7359339

  1.  

Jul. 15

Anubhav Sinha, Aminul Islam, “Half-Select Free Data-Dependent Stack PMOS Switching 10T Single-Ended SRAM Cell,” International Conference on Microelectronics, Circuits and Systems (Micro2015), Kolkata, India, 11-12 Jul. 2015, vol. 2, pp. 135-141.

  1.  

Jul. 15

Amresh Kumar, Aminul Islam, “Robust Design of Nanoscale Summing Circuit using Multi-Gate Devices @ 32-nm Technology Node,” International Conference on Microelectronics, Circuits and Systems (Micro2015), Kolkata, India, 11-12 Jul. 2015, vol. 2, pp. 22-27.

  1.  

Jul. 15

Manisha Guduri, Pragya Srivastava, Aminul Islam, “A Circuit-Level Technique to Design Robust Summing Circuit for Ultra-Low Power Application,” International Conference on Microelectronics, Circuits and Systems (Micro2015), Kolkata, India, 11-12 Jul. 2015, vol. 2, pp. 77-82.

  1.  

Jul. 15

Chandaramauleshwar Roy, Aminul Islam “Comparative Analysis of Various 9T SRAM Cell at 22-nm Technology Node,” in Proc. 2nd IEEE Int. Conf. on Recent Trends in Information Systems (ReTIS-15), Jadavpur University, Kolkta, India, Jul. 9-11, 2015, pp. 491 – 496.  DOI:  http://dx.doi.org/10.1109/ReTIS.2015.7232929,  SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7232929   

  1.  

Jun. 15

Aminul Islam, "Technology scaling and its side effects,"  IEEE International Symposium on VLSI Design and Test (VDAT), Nirma University, Ahmedabad, Gujarat, India, 26-29 June 2015, pp. 1, http://dx.doi.org/10.1109/ISVDAT.2015.7208164, SharedIt:  https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7208164 

  1.  

May 15

Debosmit Majumder, Shrey Khanna, Aminul Islam, “An Ultralow-Power Low-Voltage Class-AB Fully Differential Op Amp with Cascoded Input Stage and Indirect Compensation,” in IEEE International Conference on Industrial Instrumentation and Control (ICIC 2015), College of Engineering Pune COEP), Pune, Maharashtra, India, May 28-29, 2015, pp. 1089 – 1093. INSPEC Accession Number: 15290853, http://dx.doi.org/10.1109/IIC.2015.7150909, SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7150909 

  1.  

Apr. 15

Amit Krishna Dwivedi, Rishab Mehra, Sarika Tyagi, Animul Islam, “A Compact Low Power High Frequency Pulse Generator,” in IEEE International conference on Communication Systems and Network Technologies (CSNT-2015), Gwalior, India, April 4–6, 2015, pp.  6 – 10, DOI:   10.1109/CSNT.2015.159http://dx.doi.org/10.1109/CSNT.2015.159, SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7279868  

  1.  

Apr. 15

V. Kumar and A. Islam, "CNFET Based Voltage Multiplier Circuit for RF Energy Harvesting Applications," 2015 Fifth International Conference on Communication Systems and Network Technologies, Gwalior, 2015, pp. 789-791. DOI:   10.1109/CSNT.2015.59http://dx.doi.org/10.1109/CSNT.2015.59, SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7280027

  1.  

Apr. 15

Pallavi Roy, Surbhi Jawanpuria, Vismita, Santashraya Prasad, Aminul Islam, “Characterization of AlGaN and GaN Based HEMT With AlN Interfacial Spacer,” in IEEE International conference on Communication Systems and Network Technologies (CSNT-2015), Gwalior, India, April 4–6, 2015, pp. 786 – 788, DOI: 10.1109/CSNT.2015.103http://dx.doi.org/10.1109/CSNT.2015.103, SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7280026

  1.  

Mar. 15

Amit Krishna Dwivedi, Agnish Mal, Aminul Islam, “Performance Estimation of Various Delay Elements @ 16-nm Technology Node,” in IEEE International Conference on Knowledge Collaboration in Engineering (ICKCE-2015), Kathir College of Engineering, Coimbatore, Tamilnadu, India, March 27-28, 2015, pp. 1 – 4

  1.  

Mar. 15

Rishab Mehra, Agnish Mal, Amit Krishna Dwivedi, Aminul Islam, “Voltage Controlled Tunable Resistor and its Application in Communication System,” in IEEE International Conference on Knowledge Collaboration in Engineering (ICKCE-2015), Kathir College of Engineering, Coimbatore, Tamilnadu, India, March 27-28, 2015, 1 – 4.

  1.  

Mar. 15

Agnish Mal, Rishab Mehra, Amit Krishna Dwivedi, Aminul Islam, “CMOS Based Compact Wide Band Tunable Active Inductor Design,” in IEEE International conference on Innovations in Information, Embedded and Communication Systems (ICIIECS’15), Karpagam College of Engineering, Coimbatore, Tamilnadu, India, March 19-20, 2015, pp. 1 – 6. DOI: http://dx.doi.org/10.1109/ICIIECS.2015.7193277, SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7193277

  1.  

Feb. 15

Soumitra Pal, Aminul Islam, "Device Bias Technique to Improve Design Metrics of 6T SRAM Cell for Subthreshold Operation," in Proc. IEEE International conference on Signal Processing & Integrated Network (SPIN), Amity University, Sector – 125, Noida, NCR-Delhi, Uttar Pradesh, India, February 19-20, 2015, pp. 865 – 870, DOI:  10.1109/SPIN.2015.7095170,  http://dx.doi.org/10.1109/SPIN.2015.7095170, SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7095170

  1.  

Feb. 15

Manisha Guduri, Aminul Islam, "Design of Hybrid Full Adder in Deep Subthreshold Region for Ultralow Power Applications," in Proc. IEEE International Conference on Signal Processing & Integrated Network (SPIN), Amity University, Sector – 125, Noida, NCR-Delhi, Uttar Pradesh, India, February 19-20, 2015, pp. 931 – 935, DOI:  10.1109/SPIN.2015.7095348, http://dx.doi.org/10.1109/SPIN.2015.7095348,  SharedIt:

  1.  

Feb. 15

Vivek Kumar Agarwal, Manisha Guduri, Aminul Islam, “Which is the Best 2-to-1 Line Multiplexer for Ultralow-Power Applications?,” IEEE International Conference on Computational Intelligence & Communication Technology (ICCICT), ABES Engineering College, Ghaziabad, U.P., India, February 13-14, 2015, pp. 655 – 660, DOI:  10.1109/CICT.2015.128, http://dx.doi.org/10.1109/CICT.2015.128 (Best paper award), SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7078785

  1.  

Feb. 15

Nitin Anand, Anubhav Sinha, Chandramauleshwar Roy, Aminul Islam, “Design of a Stable Read-Decoupled 6T SRAM Cell at 16-nm Technology Node” IEEE International Conference on Computational Intelligence & Communication Technology (CICT), ABES Engineering College, Ghaziabad, U.P., India, February 13-14, 2015, pp. 524 – 528, DOI:  10.1109/CICT.2015.117, http://dx.doi.org/10.1109/CICT.2015.117, SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7078758

  1.  

Feb. 15

Amit Krishna Dwivedi, Sarika Tyagi, Animul Islam, “Threshold Voltage Extraction and its Reliance on Device Parameters @ 16-nm Process Technology,” IEEE International Conference on Computer, Communication, Control and Information Technology (C3IT), Academy of Technology, Hooghly, W.B., India, February 7-8, 2015, pp. 1 – 6. DOI: 10.1109/C3IT.2015.7060166, http://dx.doi.org/10.1109/C3IT.2015.7060166,  SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7060166

  1.  

Jan. 15

Abhijeet Pasumarthy, Amit Krishna Dwivedi, Aminul Islam, “Optimized Design of Au-Polysilicon Electrothermal Microgripper for Handling Micro Objects,” in IEEE International Conference on Electrical, Electronics, Signals, Communications & Optimization (EESCO), Vignan’s Institute of Information Technology, Duvvada, Visakhapatnam, Andhra Pradesh, India, January 24-25, 2015, pp. 1 –5, DOI: http://dx.doi.org/10.1109/EESCO.2015.7253751,  SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7253751

  1.  

Jan. 15

Richa Varma, Vishesh Dokania, Ankita Sarkar, Aminul Islam, “MOSFET aspect ratio optimization for minimized transistor mismatch at UDSM technology nodes,” in IEEE International conference on computer, communication and informatics (ICCCI 2015), Coimbatore, Tamilnadu, India, January 08-10, 2015, pp. 1 – 4, DOI:  http://dx.doi.org/10.1109/ICCCI.2015.7218134,  SharedIt:  https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7218134

  1.  

Dec. 14

Nitin Anand, Chandaramauleshwar Roy, and Aminul Islam, “Highly Stable Subthreshold Single-ended 7T SRAM Cell,” in IEEE Emerging Technology Trends in Electronics, Communication and Networking (ET2ECN-2014), SVNIT, Surat, Gujarat, India, December 26-27, 2014, pp. 1 – 4. DOI:  10.1109/ET2ECN.2014.7044928, http://dx.doi.org/10.1109/ET2ECN.2014.7044928,  SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7044928

  1.  

Dec. 14

Soumitra Pal, Aminul Islam, “A Double-Ended Read-Decoupled 8T SRAM Cell with Improved Stability,” in 3rd International Conference on Computing, Communication and Sensor Network (CCSN2014), Puri, Odisha, India, December 12-14, 2014, pp. 230 – 232.

  1.  

Dec. 14

Nitin Anand, Soumitra Pal, Aminul Islam, "Stability and Variability Enhancement of 9T SRAM cell for Subthreshold Operation," in IEEE Annual India Conference (INDICON), Yashada, Pune, India, December 11-13, 2014 pp. 1 – 5, Publisher: IEEE,  DOI: 10.1109/INDICON.2014.7030462http://dx.doi.org/10.1109/INDICON.2014.7030462,   SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7030462

  1.  

Oct. 14

Arpit Anand and Aminul Islam, "CNFET-based ternary inverter and its variability analysis," Proceedings of 3rd International Conference on Reliability, Infocom Technologies and Optimization, Noida, 2014, pp. 1-6. Publisher: IEEE, DOI: 10.1109/ICRITO.2014.7014670, http://dx.doi.org/10.1109/ICRITO.2014.7014670,   SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7014670

  1.  

Oct. 14

Vivek Kumar Agarwal, Manisha Guduri, Aminul Islam, "Power and Variability Analysis of CMOS Logic Families @ 22-nm Technology Node," in IEEE 3rd International Conference on Reliability, Infocom Technologies and Optimization (ICRITO 2014), Amity University, Noida, Uttar Pradesh, India, October 8-10, 2014, pp. 1-6, Publisher: IEEE, DOI: 10.1109/ICRITO.2014.7014674http://dx.doi.org/10.1109/ICRITO.2014.7014674,   SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7014674

  1.  

Sep. 14

Amit Krishna Dwivedi, Smriti Kumari, Aminul Islam, "Characterization of Phase-Change Material using Verilog-A and its Validation as a Memory Element," in IEEE International Conference on Devices, Circuits and Communications (ICDCCom – 2014), BIT, Mesra, Ranchi, India, September 12-13, 2014, pp. 1 – 5, Publisher: IEEE, DOI: 10.1109/ICDCCom.2014.7024702, http://dx.doi.org/10.1109/ICDCCom.2014.7024702,   SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7024702

  1.  

Sep. 14

Amit Krishna Dwivedi, Kumar Abhijeet Urma, Amresh Kumar, Aminul Islam, "Robust Design of CNFET Based Buffered Delay Model and Microwave Pulse Generator," in IEEE International Conference on Devices, Circuits and Communications (ICDCCom – 2014), BIT, Mesra, Ranchi, India, September 12-13, 2014, pp. 1 – 4, Publisher: IEEE, DOI: 10.1109/ICDCCom.2014.7024742, http://dx.doi.org/10.1109/ICDCCom.2014.7024742,  SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7024742

  1.  

Jul. 14

Anubhav Sinha, Nitin Anand, Aminul Islam, "Design Metrics Improvement of 10TSRAM Cell using CNFET," in IEEE International Conference on Control, Instrumentation, Communication & Computational Technologies (ICCICCT-2014), Noorul Islam Centre for Higher Education, Noorul Islam University, Kumaracoil, Thuckalay, 
Kanyakumari District, Tamilnadu, India, July 10-11, 2014, pp. 317-321,  Publisher: IEEE,  DOI
10.1109/ICCICCT.2014.6992977, http://dx.doi.org/10.1109/ICCICCT.2014.6992977,   SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6992977

  1.  

May 14

Amit Krishna Dwivedi, Pragya Srivastava, Farha Tarannum, Smriti Suman, Aminul Islam, “Performance Evaluation of MCML-Based XOR/XNOR Circuit at 16-nm Technology Node,” in IEEE International Conference on Advanced Communications, Control and Computing Technologies (ICACCCT), Ramanathapuram, Tamilnadu, India, May 08-10, 2014, pp. 512 – 516, Publisher: IEEE, DOI:  10.1109/ICACCCT.2014.7019138, http://dx.doi.org/10.1109/ICACCCT.2014.7019138,   SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7019138

  1.  

May 14

Pragya Srivastava, Amit Krishna Dwivedi, Aminul Islam, “Power - and Variability-Aware Design of FinFET-Based XOR Circuit at Nanoscale Regime,” in IEEE International Conference on Advanced Communications, Control and Computing Technologies (ICACCCT), Ramanathapuram, Tamilnadu, India, May 08-10, 2014, pp. 440 – 444, Publisher: IEEE, DOI:  10.1109/ICACCCT.2014.7019481, http://dx.doi.org/10.1109/ICACCCT.2014.7019481, SharedIt:  https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7019481

  1.  

May 14

S. Pal, A. Bhattacharya, A. Islam, “Comparative study of CMOS- and FinFET-based 10T SRAM Cell in Subthreshold regime,” in IEEE International Conference on Advanced Communications, Control and Computing Technologies (ICACCCT), Ramanathapuram, Tamilnadu, India, May 08-10, 2014, pp. 507 – 511, Publisher: IEEE, DOI: 10.1109/ICACCCT.2014.7019137, http://dx.doi.org/10.1109/ICACCCT.2014.7019137, SharedIt:  https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7019137

  1.  

May 14

A. Bhattacharya, S. Pal and A. Islam, "Implementation of FinFET based STT-MRAM bitcell," 2014 IEEE International Conference on Advanced Communications, Control and Computing Technologies, Ramanathapuram, 2014, pp. 435-439. Publisher: IEEE. DOI:  10.1109/ICACCCT.2014.7019480, http://dx.doi.org/10.1109/ICACCCT.2014.7019480, SharedIt:  https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7019480

  1.  

Mar. 14

Aditya Tyagi, Ch Gopi, Prayank Baldi, Vikash Kumar, Aminul Islam, "CNFET-Based 0.1 V to 0.6 V DC/DC Converter," in IEEE International conference on recent advances in engineering and computational sciences, Punjab University, Chandigarh, India, March 6 – 8, 2014, pp. 1 – 5. DOI:  10.1109/RAECS.2014.6799605http://dx.doi.org/10.1109/RAECS.2014.6799605,  SharedIt:  https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6799605

  1.  

Feb. 14

Prashant Gupta, A. Islam, "Robustness Study and CNFET Realization of Optimal Logic Circuit for Ultralow Power Applications," in IEEE International conference on Signal Processing & Integrated Network (SPIN), Amity University, Sector – 125, Noida, NCR-Delhi, Uttar Pradesh, India, February 20-21, 2014, pp. 618 – 623. DOI: 10.1109/SPIN.2014.6777028,  http://dx.doi.org/10.1109/SPIN.2014.6777028, SharedIt:  https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6777028

  1.  

Dec. 13

Mohd. Ajmal Kafeel, Mohd. Hasan, Mohd. Shah Alam, A. Kumar, S. Prasad, A. Islam, “Performance evaluation of CNFET based operational amplifier at technology node beyond 45-nm,” in IEEE Annual India Conference (INDICON), IIT, Bombay, India, December 13-15, 2013, pp. 1 – 5. DOI:  10.1109/INDCON.2013.6725973http://dx.doi.org/10.1109/INDCON.2013.6725973,  SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6725973

  1.  

Dec. 13

V. Dokania, A. Islam, “Design of variation-resilient CNFET-based Schmitt trigger circuits with optimum hysteresis at 16-nm technology node,” in IEEE Annual India Conference (INDICON), IIT, Bombay, India, December 13-15, 2013, pp. 1 – 6. DOI:  10.1109/INDCON.2013.6725885,  http://dx.doi.org/10.1109/INDCON.2013.6725885, SharedIt:  https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6725885  

  1.  

Nov. 13

V. Dokania, A. Imran and A. Islam, "Investigation of robust full adder cell in 16-nm CMOS technology node," IMPACT-2013, Aligarh, 2013, pp. 207-211. DOI: 10.1109/MSPCT.2013.6782120,  http://dx.doi.org/10.1109/MSPCT.2013.6782120, SharedIt:  https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6782120

  1.  

Jul. 13

V. Dokania, A. Islam, "Variability Analysis and Comparison of Full Adder Topologies in 16-nm Technology Node," in Diamond Jubilee Zonal Seminar on Advances of Electronics, Information and Communication Technology in India, Organized by IETE, Ranchi Centre, Jharkhand, India, BNR Chanakya, Ranchi, Jharkhand, India, July 13-14, 2013, pp. 12.

  1.  

Jul. 13

R. Kejariwal, S. C. Bose, A. Islam, "Performance Evaluation of Op Amp Using Emerging Device," in Diamond Jubilee Zonal Seminar on Advances of Electronics, Information and Communication Technology in India, Organized by IETE, Ranchi Centre, Jharkhand, India, BNR Chanakya, Ranchi, Jharkhand, India, July 13-14, 2013, pp. 09. (Best paper award).

  1.  

Feb. 13

A. Kumar, S. Prasad, A. Islam, “Realization and Optimization of CNFET Based Operational Amplifier at 32-nm Technology Node,” in International Conclave 2013," in Innovations in Engineering & Management” (ICIEM 2013), BIT, Patna, India, February 22-23, 2013.

  1.  

Jan. 13

Dhruva Kumar, Monisha Saw, A. Islam, “Design of 2:1 Multiplexer and 1:2 Demultiplexer Using Magnetic Tunnel Junction Elements,” in IEEE International Conference on Engineering Trends in VLSI, Embedded Systems, Nanoelectronics and Telecommunication Systems (ICEVENT), SKP Engineering College, Tiruvannamalai, Tamil Nadu, India, January 7-9, 2013, pp. 1 – 5. DOI:   10.1109/ICEVENT.2013.6496589,  (Best paper award). http://dx.doi.org/10.1109/ICEVENT.2013.6496589,  SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6496589

  1.  

Dec. 12

S. Kushwaha, S. Prasad, A. Islam, “Variation Mitigation Technique in SRAM Cell using Adaptive Body Bias,” in IEEE International Conference on Communications, Devices, and Intelligent Systems (CODIS), Jadavpur University, Kolkata, India, December 28-29, 2012, pp. 117 – 120. DOI: 10.1109/CODIS.2012.6422150, http://dx.doi.org/10.1109/CODIS.2012.6422150, SharedIt:  https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6422150

  1.  

Dec. 12

A. Islam, Mohd. Hasan, “FinFET-based Variation Resilient 8T SRAM Cell,” in IEEE Annual India Conference (INDICON), Kochi, Kerala, India, December 7-9, 2012, pp. 121 – 125. DOI:  10.1109/INDCON.2012.6420600http://dx.doi.org/10.1109/INDCON.2012.6420600, SharedIt:  https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6420600

  1.  

Nov. 12

A. Islam, Mohd. Ajmal Kafeel, Tanjeem Iqbal, Mohd. Hasan, "Variability Analysis of MTJ-based circuit," in IEEE 3nd International Conference on Computer and Communication Technology (ICCCT), MNNIT, Allahabad, Uttar Pradesh, India, November 23-25, 2012, pp. 57 – 62. DOI: 10.1109/ICCCT.2012.20http://dx.doi.org/10.1109/ICCCT.2012.20, SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6394667

  1.  

Mar. 12

A. Islam, Mohd. Ajmal Kafeel, S. D. Pable, Mohd. Hasan, “Variation immune near threshold SRAM cell,” in IEEE International conference on recent Trend in Information Technology (RAIT), ISM, Dhanbad, India, March 15-17, 2012, pp. 286 – 291.   SharedIt: https://www.researchgate.net/publication/233389793_Variation_immune_near_threshold_SRAM_cell

  1.  

Dec. 11

A. Islam, Mohd. Ajmal Kafeel, Ale Imran, Mohd. Hasan, “Low Active Power High Speed Cache Design,” in IEEE International Symposium on Electronic System Design (ISED), Kochi, Kerala, India, December 19-21, 2011, pp. 254–259. DOI: 10.1109/MSPCT.2011.6150447, https://doi.org/10.1109/ISED.2011.46, SharedIt:   https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6117360&tag=1

  1.  

Dec. 11

A. Islam, Ale Imran, Mohd. Hasan, “Robust Subthreshold Full Adder Design Technique,” in IEEE International Conference on Multimedia, Signal Processing and Communication Technologies (IMPACT), AMU, Aligarh, India, December 17-19, 2011, pp. 99 – 102. DOI: 10.1109/MSPCT.2011.6150447, http://dx.doi.org/10.1109/MSPCT.2011.6150447, SharedIt:  https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6150447

  1.  

Dec. 11

Ale Imran, S. D. Pable, A. Islam, Mohd. Hasan, “Optimized Design of Hybrid CMOS and CNFET 32 nm Dual-X Current Conveyor,” in IEEE International Conference on Multimedia, Signal Processing and Communication Technologies (IMPACT), AMU, Aligarh, India, December 17-19, 2011, pp. 76 – 79. DOI: 10.1109/MSPCT.2011.6150440http://dx.doi.org/10.1109/MSPCT.2011.6150440, SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6150440

  1.  

Dec. 11

A. Islam, Mohd. Hasan, “Performance and variability improvement of subthreshold SRAM cell using DTMOS and cell content body bias techniques,” in International Conference on Meta Computing (ICoMec), National Institute of Oceanography, Dona Paula, Goa, India, December 15-16, 2011, pp. 29–32.

  1.  

Sep. 11

A. Islam, A. Imran, Mohd. Hasan, "Variability Analysis and FinFET-based Design of XOR and XNOR Circuit," in IEEE 2nd International Conference on Computer and Communication Technology (ICCCT), MNNIT, Allahabad, Uttar Pradesh, India, September 15-17, 2011, pp. 239 – 245. DOI: 10.1109/ICCCT.2011.6075163http://dx.doi.org/10.1109/ICCCT.2011.6075163,  SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6075163

  1.  

Feb. 11

A. Islam, Farhan Aziz, Mohd. Hasan, M. W. Akram, “Analysis of Impact of Device Parameters Fluctuation on SRAM Cell for Process-Tolerant Cache Architecture,” in International Conference on Advances in Electrical & Electronics Engineering (ICAEEE), MIT, Muradabad, Uttar Pradesh, India, February 25-26, 2011.

  1.  

Feb. 11

A. Islam, M. W. Akram, Mohd. Hasan, "Variability Immune FinFET-Based Full Adder Design in Subthreshold Region," in IEEE International Conference on Devices and Communications (ICDeCom), BIT, Mesra, Ranchi, Jharkhand, India, February 24-25, 2011, pp. 1-5. DOI: 10.1109/ICDECOM.2011.5738477, http://dx.doi.org/10.1109/ICDECOM.2011.5738477,  SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5738477

  1.  

Dec. 10

A. Islam, M. W. Akram, Mohd. Hasan, "Variation Resilient Subthreshold Full Adder Cell," in National Conference on Information and Communication Technology (NCICT-10), NYSS College of Engg. & Research, Nagpur, Maharashtra, India, December 23-25, 2010, pp. 27-32.

  1.  

Dec. 10

A. Islam, M. W. Akram, Ale Imran, Mohd. Hasan, “Energy Efficient and Process Tolerant Full Adder Design in Near Threshold Region using FinFET,” in IEEE International Symposium on Electronic System Design (ISED), Bhubaneswar, Orissa, India, December 20-22, 2010, pp. 56 – 60. DOI: 10.1109/ISED.2010.19http://dx.doi.org/10.1109/ISED.2010.19,   SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5715149

  1.  

Dec. 10

A. Islam, Mohd. Hasan, “Power and Variability Aware Design of SRAM using Carbon Nanotube Field Effect Transistor,” in IEEE Annual India Conference (INDICON), Jadavpur University, Kolkata, India, December 17-19, 2010, pp. 1 – 4 DOI:  10.1109/INDCON.2010.5712597, http://dx.doi.org/10.1109/INDCON.2010.5712597,  SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5712597

  1.  

Dec. 10

A. Islam, M. W. Akram, S. D. Pable, Mohd. Hasan, “Robust 1-Bit Full Adder Design using FinFET at 32 nm Technology Node,” in International Conference on Communication, Computers and Devices (ICCCD), IIT, Kharagpur, India, December 10-12, 2010.

  1.  

Dec. 10

S. D. Pable, M. W. Akram, Mohd. Hasan, A. Islam, “Variability aware interconnect driver design for subthreshold circuits,” in International Conference on Communication, Computers and Devices (ICCCD), IIT, Kharagpur, India, December 10-12, 2010.

  1.  

Oct. 10

A. Islam, M. W. Akram, S. D. Pable, Mohd. Hasan, “Design and Analysis of Robust Dual Threshold CMOS Full Adder Circuit in 32nm Technology,” in IEEE International Conference on Advances in Recent Technologies in Communication & Computing (ARTCom), Kottayam, Kerala, India, October 16-17, 2010, pp. 418-420. DOI: 10.1109/ARTCom.2010.20,  http://dx.doi.org/10.1109/ARTCom.2010.20,  SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5655587

  1.  

Oct. 10

A. Islam, M. W. Akram, S. D. Pable, Mohd. Hasan, “Statistical Data Stability and Leakage Evaluation of SRAM Cell in Sub-45nm Technology,” in IEEE International Conference on Advances in Communication, Network, and Computing (CNC), Calicut, Kerala India, October 4-5, 2010, pp. 149-152.

  1.  

Sep. 10

S. D. Pable, A. Imran, Mohd. Hasan, A. Islam, “Performance Optimization of LUT of Subthreshold FPGA in Deep Submicron,” in IEEE International Conference on Computer and Communication Technology (ICCCT), MNNIT, Allahabad, Uttar Pradesh, India, September 17-19, 2010, pp. 64-69. DOI: 10.1109/ICCCT.2010.5640383, http://dx.doi.org/10.1109/ICCCT.2010.5640383,   SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5640383

  1.  

Jul. 10

A. Islam, M. W. Akram, S. D. Pable, Mohd. Hasan, “Design of a Novel CNTFET-Based 1-Bit Full Adder in Deep Submicron Technology,” in 14th VLSI Design and Test Symposium (VDAT), Chitkara University, Himachal Pradesh, India, July 7 - 9, 2010.

  1.  

Jul. 10

S. D. Pable, A. Islam, M. W. Akram, Mohd. Hasan, “Design of Robust Subthreshold Circuits,” in 14th VLSI Design and Test Symposium (VDAT), Chitkara University, Himachal Pradesh, India, July 7 - 9, 2010.

  1.  

Dec. 09

A. Islam, Mohd. Hasan, “Design and Development of Clocked Transmission Gate Cross-coupled Adiabatic Circuit,” in IEEE International Conference on Advances in Computing, Control, and Telecommunication Technologies (ACT), Trivandrum, Kerala, India, December 28-29, 2009, pp. 650−653. DOI: 10.1109/ACT.2009.165,  http://dx.doi.org/10.1109/ACT.2009.165,  SharedIt: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5375912

  1.  

Feb. 09

A. Islam, Shashank Kumar, Ratish Kumar Mishra, Himanshu Raj, “Design and Development of Low-Voltage High-Speed CMOS Schmitt trigger”, in 3rd National Conference on Embedded Systems-2009 (EMCON-‘09), Kalasalingam University, Anand Nagar, Krishnankoil-626190, Srivilliputtur (via), Virudhunagar (Dt.), Feb 19 - 20, 2009, pp. 15 – 21.

  1.  

Dec. 08

A. Islam, Shashank Kumar, “Design of Signed Multiplier based on Carry Save Adder and modified Booth algorithm”, in National Seminar on Micro/Nano Manufacturing -2008 (NSMNM-08), Cambridge Institute of Technology (CIT), Tatisilwai, Ranchi, Jharkhand, Department of Mechanical Engineering, CIT, December 6 -7, 2008.

  1.  

Oct. 08

V. Nath, A. Islam, “Design and Development of CMOS Low-Power Digital Systems based on Adiabatic-Switching Principles in VLSI”, in 24th national convention of Electronics & Communication Engineers & National seminar on Recent Advances in Wireless & Mobile telecommunications -2008 (RAWMTEL-08), The Institute of Engineers (India) & Department of ECE, BIT, Mesra, Ranchi, Jharkhand State Centre, Nepal Kothi, Engineers Bhawan, Doranda, Ranchi, Jharkhand, India, October 18th – 19th, 2008.

  1.  

Jan. 07

A. Islam, S.S. Solanki, “Automatic Inventory Management System”, in All India Seminar-2007 on Achievements and challenges in Electronics and Telecommunication Engineering (ACETE-07), The Institute of Engineers (India), Jharkhand State Centre, Engineers Bhawan, Nepal Kothi, Doranda, Ranchi, Jharkhand, India, Jan. 20 – 21, 2007, pp. 39.

Member of Professional Bodies

 

MEMBER OF NATIONAL BODIES: Member of Institution of Engineers (India) (Membership No. M-146490-0)

MEMBER OF INTERNATIONAL BODIES:

  1. Senior Member of IEEE (Membership No. 90857260)
  2. Member of IEEE Electron Device Society
  3. Member of IEEE Council on Electronic Design Automation
  4. Member of IEEE Council on RFID
  5. Member of IEEE Sensors Council
  6. Member of IEEE Nanotechnology Council 
Current Sponsored Projects

Text and Reference Books

CHAPTERS IN BOOKS

S. No.

Date

Title of the book with Page Nos. and title of the chapter /Publication date / Publisher & ISSN / ISBN No

  1.  

Mar. 26

M. Kumar, K. Koley, and A. Islam, “Exploring the new era of Post-MOSFET devices for High-Speed and computational performance,” in Advances in engineering research/Advances in Engineering Research, 2026, pp. 264–273. doi: 10.2991/978-94-6239-628-9_24, Publisher: ATLANTIS PRESS, Part of SPRINGER NATURE, ISSN (Online): 2352-5401, ISSN (Print): 2731-8079, https://doi.org/10.2991/978-94-6239-628-9_24

  1.  

May 25

Atharv Kapre, Vaibhav Gupta, Shashank Kumar Dubey, Monalisa Pandey and Aminul Islam, Chapter Title: “Design of a Triple Node Upset Tolerant Nonvolatile Latch”, BOOK TITLE: “Intelligent Assistive Devices: Paradigms and Applications”. Publisher: Apple Academic Press (AAP), co-publication with CRC Press Taylor and Francis Group.

https://www.taylorfrancis.com/chapters/edit/10.1201/9781003534037-21/design-triple-node-upset-tolerant-nonvolatile-latch-atharv-kapre-vaibhav-gupta-shashank-kumar-dubey-monalisa-pandey-aminul-islam

  1.  

May 25

Saianudeep Reddy Nayini, Krishna Sai Kushal Gella, Shashank Kumar Dubey, Manisha Guduri, Aminul Islam, Chapter Title: “A Technique to Mitigate PVT Variations in Double-Phase Nonoverlapping Clock Generating Circuit”, BOOK TITLE: “Intelligent Assistive Devices: Paradigms and Applications”. Publisher: Apple Academic Press (AAP), co-publication with CRC Press Taylor and Francis Group.

https://www.taylorfrancis.com/chapters/edit/10.1201/9781003534037-12/development-cnn-based-mask-detection-technique-using-python-tensorflow-rishu-jeet-shashank-kumar-dubey-aminul-islam

  1.  

May 25

Rishu Jeet, Shashank Kumar Dubey, Aminul Islam, Chapter Title: “Development of CNN-Based Mask Detection Technique Using Python and TensorFlow”, BOOK TITLE: “Intelligent Assistive Devices: Paradigms and Applications”. Publisher: Apple Academic Press (AAP), co-publication with CRC Press Taylor and Francis Group.

https://www.taylorfrancis.com/chapters/edit/10.1201/9781003534037-22/technique-mitigate-pvt-variations-double-phase-nonoverlapping-clock-generating-circuit-saianudeep-reddy-nayini-krishna-sai-kushal-gella-shashank-kumar-dubey-manisha-guduri-aminul-islam

  1.  

Apr. 25

Nishant Biyani (Birla Institute of Technology Mesra, Ranchi, India), Monalisa Pandey (Meerut Institute of Engineering and Technology, India), Shashank Kumar Dubey (Global Academy of Technology, Bengaluru, India), and Aminul Islam (Birla Institute of Technology Mesra, Ranchi, India), Chapter Title: “Overview of RadiationHardened SRAM Cell Design Techniques,” BOOK TITLE:  Exploring the Intricacies of Digital and Analog VLSI (pp. 277-292), editors: Koushik Guha, Jyoti Kandpal, and Swagata Devi, ISBN13: 9798369380840ISBN13: 9798369380840, ISBN13 Softcover: 9798369380857, EISBN13: 9798369380864, DOI: 10.4018/979-8-3693-8084-0.ch010, Link of Chapter: https://www.igi-global.com/gateway/chapter/375691

  1.  

Mar. 25

Shashank Kumar Dubey, Soumak Nandi, Kondaveeti Girija Sravani, Sandip Swarnakar, Mukesh Kumar, and Aminul Islam, Chapter Title: “Heterojunction Concept and Technology for FET Developments,” BOOK TITLE:  Field Effect Transistors, Book Editor(s): P. Suveetha Dhanaselvam, K. Srinivasa Rao, Shiromani Balmukund Rahi, Dharmendra Singh Yadav, Publisher: Wiley, https://doi.org/10.1002/9781394248506.ch19

  1.  

June 24

Dubey, S.K., Islam, A. (2024). Analysis of High Frequency AlGaN/GaN-Based HEMT for Resistive Load Inverter. In: Sikander, A., Zurek-Mortka, M., Chanda, C.K., Mondal, P.K. (eds) Advances in Energy and Control Systems. ESDA 2022. Lecture Notes in Electrical Engineering, vol 1148, pp. 211–221. Springer, Singapore. https://doi.org/10.1007/978-981-97-0154-4_16, Online ISBN: 978-981-97-0154-4, Print ISBN: 978-981-97-0153-7

  1.  

June 24

Ranjan, N., Dubey, S.K., Islam, A. (2024). Study of High Electron Mobility Transistor for Biological Sensors. In: Sikander, A., Zurek-Mortka, M., Chanda, C.K., Mondal, P.K. (eds) Advances in Energy and Control Systems. ESDA 2022. Lecture Notes in Electrical Engineering, vol 1148, pp. 249–260. Springer, Singapore. https://doi.org/10.1007/978-981-97-0154-4_19, Online ISBN: 978-981-97-0154-4, Print ISBNL: 978-981-97-0153-7

  1.  

June 24

Jeet, R., Dubey, S.K., Islam, A. (2024). Heart Problem Prediction Using Machine Learning Technique. In: Sikander, A., Zurek-Mortka, M., Chanda, C.K., Mondal, P.K. (eds) Advances in Energy and Control Systems. ESDA 2022. Lecture Notes in Electrical Engineering, vol 1148, pp. 283–293. Springer, Singapore. https://doi.org/10.1007/978-981-97-0154-4_22, Online ISBN: 978-981-97-0154-4, Print ISBN978-981-97-0153-7

  1.  

Aug. 23

Vaibhav GuptaAtharv KapreShashank Kumar Dubey and Aminul Islam. (2023). Implementation and Analysis of CNFET-Based PCRAM Cell Using 32 nm Technology. In: Szymanski, J.R., Chanda, C.K., Mondal, P.K., Khan, K.A. (eds) Energy Systems, Drives and Automations. ESDA 2021. Lecture Notes in Electrical Engineering, vol 1057, pp. 252-263. Springer, Singapore. https://doi.org/10.1007/978-981-99-3691-5_21, https://link.springer.com/book/10.1007/978-981-99-3691-5?page=2#toc 

  1.  

Aug. 23

Rishi Jain, Harsh Malpani, Sanyam Jain, Monalisa Pandey, Aminul Islam. (2023). Characterization of Dynamic C-Gate Using GNRFET @ 16-nm Technology Generation. In: Szymanski, J.R., Chanda, C.K., Mondal, P.K., Khan, K.A. (eds) Energy Systems, Drives and Automations. ESDA 2021. Lecture Notes in Electrical Engineering, vol 1057, 225-237. Springer, Singapore. https://doi.org/10.1007/978-981-99-3691-5_19, https://link.springer.com/book/10.1007/978-981-99-3691-5?page=2#toc 

  1.  

Aug. 23

Kumar, S., Saraiyan, S., Saurabh, A., Dubey, S.K., Prasad, S., Islam, A. (2023). Design of a 2.45 GHz Cascode Low Noise Amplifier with π Matching Technique. In: Szymanski, J.R., Chanda, C.K., Mondal, P.K., Khan, K.A. (eds) Energy Systems, Drives and Automations. ESDA 2021. Lecture Notes in Electrical Engineering, vol 1057, 201-2012. Springer, Singapore. https://doi.org/10.1007/978-981-99-3691-5_18, https://link.springer.com/book/10.1007/978-981-99-3691-5 

  1.  

Aug. 23

Firdoush, S., Mishra, I., Xalxo, R., Dubey, S.K., Prasad, S., Islam, A. (2023). Study and Analysis of AlGaN/GaN-Based HEMT and MOSHEMT. In: Szymanski, J.R., Chanda, C.K., Mondal, P.K., Khan, K.A. (eds) Energy Systems, Drives and Automations. ESDA 2021. Lecture Notes in Electrical Engineering, vol 1057, pp. 239-249. Springer, Singapore. https://doi.org/10.1007/978-981-99-3691-5_20, https://link.springer.com/book/10.1007/978-981-99-3691-5?page=2#toc 

  1.  

Aug. 23

Satyam SaraiyanAbhinit SaurabhShubham KumarShashank Kumar Dubey and Aminul Islam. (2023). A 2.45 GHz Low Noise Figure CMOS-Based LNA Using Constant gm Biasing Technique. In: Szymanski, J.R., Chanda, C.K., Mondal, P.K., Khan, K.A. (eds) Energy Systems, Drives and Automations. ESDA 2021. Lecture Notes in Electrical Engineering, vol 1057, pp. 201-212. Springer, Singapore. https://doi.org/10.1007/978-981-99-3691-5_17, https://link.springer.com/book/10.1007/978-981-99-3691-5 

  1.  

Jun. 23

Prasad, S., Islam, A. (2023). Influence of AlN Spacer Layer on SiN-Passivated AlGaN/GaN HEMT. In: Abhijit BiswasAminul IslamRishu ChaujarOlga Jaksic (eds) Microelectronics, Circuits and Systems. Lecture Notes in Electrical Engineering, vol 976, pp. 233-242. Springer, Singapore. https://doi.org/10.1007/978-981-99-0412-9_20, https://link.springer.com/book/10.1007/978-981-99-0412-9 

  1.  

Jun. 23

Ravi Teja YekulaMonalisa Pandey and  Aminul Islam. (2023). Highly Reliable PMOS Pass Transistor-Based Radiation Tolerant 12T SRAM Cell for Deep Space Applications. In: Abhijit BiswasAminul IslamRishu ChaujarOlga Jaksic (eds) Microelectronics, Circuits and Systems. Lecture Notes in Electrical Engineering, vol 976, pp. 1-11. Springer, Singapore. https://doi.org/10.1007/978-981-99-0412-9_1, https://link.springer.com/book/10.1007/978-981-99-0412-9

  1.  

Jun. 23

Monika Rani, G. Sai Namith, Shashank Kumar Dubey, Aminul Islam. (2023). Majority PFET-Based Radiation Tolerant Static Random Access Memory Cell. In: Biswas, A., Islam, A., Chaujar, R., Jaksic, O. (eds) Microelectronics, Circuits and Systems. Lecture Notes in Electrical Engineering, vol 976, pp. 13–23. Springer, Singapore. https://doi.org/10.1007/978-981-99-0412-9_2, https://link.springer.com/book/10.1007/978-981-99-0412-9 

  1.  

Jun. 23

Faizan Khan, M., Chowdhury, S., Kumar, R., Dubey, S.K., Prasad, S., Islam, A. (2023). Comparative and Robustness Study of 3-Bit Adder. In: Abhijit BiswasAminul IslamRishu ChaujarOlga Jaksic (eds) Microelectronics, Circuits and Systems. Lecture Notes in Electrical Engineering, vol 976, pp. 287-299,  Springer, Singapore. https://doi.org/10.1007/978-981-99-0412-9_25, https://link.springer.com/book/10.1007/978-981-99-0412-9?page=2#toc

  1.  

Feb. 23

Shashank Kumar Dubey and Aminul Islam, chapter 3: “Alternate Device Architectures to Mitigate Challenges,” pp. 39-61, Book title: Nanoelectronics: Physics, Materials and Devices, Editors: Angsuman Sarkar, Arpan Deyasi, Arezki Benfdila, publisher: Elsevier, ISBN: 978-0-323-91832-9, Copyright © 2023 Elsevier Inc., https://doi.org/10.1016/C2020-0-03814-4, https://www.sciencedirect.com/science/article/abs/pii/B9780323918329000129

  1.  

Aug. 21

Aakansha, G. S. Namith, A. Dinesh, A. Sai Ram, S. K. Dubey and A. Islam. (2021). “A Highly Reliable and Radiation-Hardened Majority PFET-Based 10T SRAM Cell,” In: Biswas A., Saxena R., De D. (eds) Microelectronics, Circuits and Systems. Lecture Notes in Electrical Engineering, vol 755, pp. 113-122. Springer, Singapore. https://doi.org/10.1007/978-981-16-1570-2_11, https://link.springer.com/book/10.1007/978-981-16-1570-2

  1.  

Aug. 21

Pawan Kumar Sahu, Sparsh Koushik, Shashank Kumar Dubey and Aminul Islam, (2021) “Radiation Tolerant Memory Cell for Aerospace applications,” In: Biswas A., Saxena R., De D. (eds) Microelectronics, Circuits and Systems. Lecture Notes in Electrical Engineering, vol 755, pp. 101-110. Springer, Singapore. https://doi.org/10.1007/978-981-16-1570-2_10, https://link.springer.com/book/10.1007/978-981-16-1570-2

  1.  

Aug. 21

Sparsh KoushikPawan Kumar SahuShashank Kumar Dubey and Aminul Islam. (2021). “Radiation Immune SRAM Cell for Deep Space Applications”. In: Biswas, A., Saxena, R., De, D. (eds) Microelectronics, Circuits and Systems. Lecture Notes in Electrical Engineering, vol 755, pp. 147-156,  Springer, Singapore. https://doi.org/10.1007/978-981-16-1570-2_14, https://link.springer.com/book/10.1007/978-981-16-1570-2   

  1.  

Sep. 20

Shashank Kumar Dubey and Aminul Islam, “Effect of Source, Drain and Channel Spacing from Gate of HEMT,” book series:  Lecture Notes in Electrical Engineering (LNEE), vol. 664, pp. 81 – 90, Sep. 2020, title of the book: Energy Systems, Drives and Automations, edited by Afzal Sikander,  Dulal Acharjee, Chandan Kumar Chanda, Pranab Kumar Mondal, Piyush Verma, Print 978-981-15-5088-1,  Online: ISBN 978-981-15-5089-8, publisher: Springer Nature Singapore Pte Ltd. 2020, https://doi.org/10.1007/978-981-15-5089-8_8, https://link.springer.com/chapter/10.1007/978-981-15-5089-8_8

  1.  

Sep. 20

Vikash Kumar, Vidya Shree, D. Tejaswini, Shahid Afridi Qureshi, and Aminul Islam, “Active Multifunctional Filter Design Using Carbon Nanotube Transistors,” book series:  Lecture Notes in Electrical Engineering (LNEE), vol. 664, pp. 103 – 111, Sep. 2020, title of the book: Energy Systems, Drives and Automations, edited by Afzal Sikander, Dulal Acharjee, Chandan Kumar Chanda, Pranab Kumar Mondal, Piyush Verma, Print 978-981-15-5088-1, Online: ISBN 978-981-15-5089-8, publisher: Springer Nature Singapore Pte Ltd. 2020, https://doi.org/10.1007/978-981-15-5089-8_10, https://link.springer.com/book/10.1007/978-981-15-5089-8

  1.  

Sep. 20

Shashank Kumar Dubey and Aminul Islam, “Indium Phosphide Based Dual Gate High Electron Mobility Transistor,” book series:  Lecture Notes in Electrical Engineering (LNEE), vol. 664, pp. 255 – 264, Sep. 2020, title of the book: Energy Systems, Drives and Automations, edited by Afzal Sikander,  Dulal Acharjee, Chandan Kumar Chanda, Pranab Kumar Mondal, Piyush Verma, Print 978-981-15-5088-1,  Online: ISBN 978-981-15-5089-8, publisher: Springer Nature Singapore Pte Ltd. 2020, https://doi.org/10.1007/978-981-15-5089-8_24, https://link.springer.com/book/10.1007/978-981-15-5089-8

  1.  

Sep. 20

Vikash Kumar, Shashank Kumar Dubey and Aminul Islam, “Comparative Study of Active Inductor-Based Low-Noise Amplifiers,” book series:  Lecture Notes in Electrical Engineering (LNEE), vol. 664, pp. 411 – 418, Sep. 2020, title of the book: Energy Systems, Drives and Automations, edited by Afzal Sikander,  Dulal Acharjee, Chandan Kumar Chanda, Pranab Kumar Mondal, Piyush Verma, Print 978-981-15-5088-1,  Online: ISBN 978-981-15-5089-8, publisher: Springer Nature Singapore Pte Ltd. 2020, https://doi.org/10.1007/978-981-15-5089-8_40, https://link.springer.com/book/10.1007/978-981-15-5089-8

  1.  

Sep. 20

Divya Sri Dodla, Sayonee Mohapatra, Yashasvi Vijayvargiya, Shashank Kumar Dubey, Vikash Kumar, and Aminul Islam, “Design of Robust Ratioed CMOS SR Latch,” book series:  Lecture Notes in Electrical Engineering (LNEE), vol. 664, pp. 429 – 441, Sep. 2020, title of the book: Energy Systems, Drives and Automations, edited by Afzal Sikander,  Dulal Acharjee, Chandan Kumar Chanda, Pranab Kumar Mondal, Piyush Verma, Print 978-981-15-5088-1,  Online: ISBN 978-981-15-5089-8, publisher: Springer Nature Singapore Pte Ltd. 2020, https://doi.org/10.1007/978-981-15-5089-8_42, https://link.springer.com/book/10.1007/978-981-15-5089-8

  1.  

Sep. 20

Shashank Kumar Dubey and Aminul Islam, “Study and Analysis of AlInN/GaN Based High Electron Mobility Transistor,” book series:  Lecture Notes in Electrical Engineering (LNEE), vol. 664, pp. 449 – 459, Sep. 2020, title of the book: Energy Systems, Drives and Automations, edited by Afzal Sikander,  Dulal Acharjee, Chandan Kumar Chanda, Pranab Kumar Mondal, Piyush Verma, Print 978-981-15-5088-1,  Online: ISBN 978-981-15-5089-8, publisher: Springer Nature Singapore Pte Ltd. 2020, https://doi.org/10.1007/978-981-15-5089-8_44, https://link.springer.com/book/10.1007/978-981-15-5089-8

  1.  

Sep. 20

Abhinit Saurabh, Amresh Kumar, Shashank Kumar Dubey, and Aminul Islam, “A Technique to Design Robust Single-Stage Operational Amplifier,” book series:  Lecture Notes in Electrical Engineering (LNEE), vol. 664, pp. 469 – 478, Sep. 2020, title of the book: Energy Systems, Drives and Automations, edited by Afzal Sikander,  Dulal Acharjee, Chandan Kumar Chanda, Pranab Kumar Mondal, Piyush Verma, Print 978-981-15-5088-1,  Online: ISBN 978-981-15-5089-8, publisher: Springer Nature Singapore Pte Ltd. 2020, https://doi.org/10.1007/978-981-15-5089-8_46, https://link.springer.com/book/10.1007/978-981-15-5089-8

  1.  

Sep. 20

Vikash Kumar, Shashank Kumar Dubey and Aminul Islam, “A Current-Mode Memristor Emulator Circuit,” book series:  Lecture Notes in Electrical Engineering (LNEE), vol. 664, pp. 493 – 501, Sep. 2020, title of the book: Energy Systems, Drives and Automations, edited by Afzal Sikander,  Dulal Acharjee, Chandan Kumar Chanda, Pranab Kumar Mondal, Piyush Verma, Print 978-981-15-5088-1,  Online: ISBN 978-981-15-5089-8, publisher: Springer Nature Singapore Pte Ltd. 2020, https://doi.org/10.1007/978-981-15-5089-8_48, https://link.springer.com/book/10.1007/978-981-15-5089-8

  1.  

Sep. 20

Vikash Kumar and Aminul Islam, “Design of Fractional-Order Low-Pass and High-Pass Filter,” book series:  Lecture Notes in Electrical Engineering (LNEE), vol. 664, pp. 535 – 542, Sep. 2020, title of the book: Energy Systems, Drives and Automations, edited by Afzal Sikander,  Dulal Acharjee, Chandan Kumar Chanda, Pranab Kumar Mondal, Piyush Verma, Print 978-981-15-5088-1,  Online: ISBN 978-981-15-5089-8, publisher: Springer Nature Singapore Pte Ltd. 2020, https://doi.org/10.1007/978-981-15-5089-8_52, https://link.springer.com/book/10.1007/978-981-15-5089-8

  1.  

Sep. 20

Vikash Kumar, Indrajit Pal and Aminul Islam, “A Fully Integrated Tunable Memristor Emulator Circuit,” book series:  Lecture Notes in Electrical Engineering (LNEE), vol. 664, pp. 553 – 560, Sep. 2020, title of the book: Energy Systems, Drives and Automations, edited by Afzal Sikander,  Dulal Acharjee, Chandan Kumar Chanda, Pranab Kumar Mondal, Piyush Verma, Print 978-981-15-5088-1,  Online: ISBN 978-981-15-5089-8, publisher: Springer Nature Singapore Pte Ltd. 2020, https://doi.org/10.1007/978-981-15-5089-8_54, https://link.springer.com/book/10.1007/978-981-15-5089-8

  1.  

Nov. 18

Deepshikha Bharti and Aminul Islam (2018), “U-Shaped Gate Trench Metal Oxide Semiconductor Field Effect Transistor: Structures and Characteristics,” chapter: 4, pp. 69 – 90, title of the book: Nanoscale devices: physics, modeling, and their application, edited by Brajesh Kumar Kaushik, Print: ISBN 9781138060340,  Online: ISBN 9781315163116, publisher: CRC Press Taylor & Francis Group, Boca Raton, Florida, USA. https://books.google.co.in/books/about/Nanoscale_Devices.html?id=Bjd7DwAAQBAJ&source=kp_book_description&redir_esc=y, https://doi.org/10.1201/9781315163116

  1.  

Nov. 18

Deepshikha Bharti and Aminul Islam, “Operational Characteristics of Vertically Diffused Metal Oxide Semiconductor Field Effect Transistor,” chapter: 5, pp. 91 – 108, title of the book: Nanoscale devices: physics, modeling, and their application, edited by Brajesh Kumar Kaushik, Print: ISBN 9781138060340,  Online: ISBN 9781315163116, Publisher: CRC Press, Taylor & Francis Group, Boca Raton, Florida, USA. https://doi.org/10.1201/9781315163116, https://books.google.co.in/books/about/Nanoscale_Devices.html?id=Bjd7DwAAQBAJ&source=kp_book_description&redir_esc=y

  1.  

Aug. 18

Saha S., Dubey S.K., Banerjee S., Pal I., Islam A. (2018) Nonvolatile Write Driver for Spin Transfer Torque Memory and Logic Design. In: Mandal J., Sinha D. (eds) Social Transformation – Digital Way. CSI 2018. Communications in Computer and Information Science, pp. 156 – 166, vol 836, 24 August 2018. Publisher, Springer, Singapore, DOI: https://doi.org/10.1007/978-981-13-1343-1_17, print ISBN: 978-981-13-1342-4, Online ISBN: 978-981-13-1343-1, https://link.springer.com/chapter/10.1007/978-981-13-1343-1_17, https://link.springer.com/book/10.1007/978-981-13-1343-1

  1.  

Aug. 18

Agrawal K., Chowdhury S., Dubey S.K., Islam A. (2018) Robustness Study of Muller C-element. In: Mandal J., Sinha D. (eds) Social Transformation – Digital Way. CSI 2018. Communications in Computer and Information Science, pp. 131- 139, vol 836, 24 August 2018. Publisher, Springer, Singapore, DOI: https://doi.org/10.1007/978-981-13-1343-1_15, print ISBN: 978-981-13-1342-4, Online ISBN: 978-981-13-1343-1,

https://link.springer.com/chapter/10.1007/978-981-13-1343-1_15, https://link.springer.com/book/10.1007/978-981-13-1343-1

  1.  

Aug. 18

Gon A., Kumar V., Pandey S., Islam A. (2018) Multi-functional Active Filter Design Using Three VDTAs. In: Mandal J., Sinha D. (eds) Social Transformation – Digital Way. CSI 2018. Communications in Computer and Information Science, pp. 124 – 130, vol 836, 24 August 2018. Publisher: Springer, Singapore, https://doi.org/10.1007/978-981-13-1343-1_14, print ISBN: 978-981-13-1342-4, Online ISBN: 978-981-13-1343-1,

https://link.springer.com/chapter/10.1007/978-981-13-1343-1_14, https://link.springer.com/book/10.1007/978-981-13-1343-1

  1.  

Aug. 18

Pal I., Kumar V., Saha S., Banerjee S., Islam A. (2018) An Electronically-Tuneable VDTA Based Sinusoidal Oscillator. In: Mandal J., Sinha D. (eds) Social Transformation – Digital Way. CSI 2018. Communications in Computer and Information Science, pp. 115 – 123, vol 836, 24 August 2018. Publisher, Springer, Singapore, DOI: https://doi.org/10.1007/978-981-13-1343-1_13, print ISBN: 978-981-13-1342-4, Online ISBN: 978-981-13-1343-1, https://link.springer.com/book/10.1007/978-981-13-1343-1

  1.  

Aug. 18

Pallavi Singh, Vikash Kumar, Lakshmi Pujitha Patnaik and Aminul Islam. (2018) A VDIBA Based Voltage-Mode Highpass and Bandpass Filter. In: Mandal J., Sinha D. (eds) Social Transformation – Digital Way. CSI 2018. Communications in Computer and Information Science, pp. 83 – 89, vol 836, 24 August 2018. Publisher: Springer, Singapore, DOI: https://doi.org/10.1007/978-981-13-1343-1_9, print ISBN: 978-981-13-1342-4, Online ISBN: 978-981-13-1343-1,

https://link.springer.com/book/10.1007/978-981-13-1343-1

  1.  

Aug. 18

Ankit K., Kumar R., Prakash O., Islam A. (2018) Optimization of InP HEMT Using Multilayered Cap and Asymmetric Gate Recess. In: Mandal J., Sinha D. (eds) Social Transformation – Digital Way. CSI 2018. Communications in Computer and Information Science, pp. 19-28, vol 836, 24 August 2018. Publisher, Springer, Singapore, DOI: https://doi.org/10.1007/978-981-13-1343-1_3, print ISBN: 978-981-13-1342-4, Online ISBN: 978-981-13-1343-1,

https://link.springer.com/chapter/10.1007/978-981-13-1343-1_3, https://link.springer.com/book/10.1007/978-981-13-1343-1

  1.  

Jul. 18

Dwivedi A.K., Guduri M., Islam A., “Performance Enhancement of Full Adder Circuit: Current Mode Operated Majority Function Based Design”, In: Bhateja V., Tavares J., Rani B., Prasad V., Raju K. (eds) Book Title: Proceedings of the Second International Conference on Computational Intelligence and Informatics, Series title:  Advances in Intelligent Systems and Computing (AISC) book series, vol. 712, pp. 569-578, 24 July 2018, Publisher: Springer, Singapore,  Print ISBN: 978-981-10-8227-6, Online ISBN: 978-981-10-8228-3, DOI: https://doi.org/10.1007/978-981-10-8228-3_52, https://link.springer.com/book/10.1007/978-981-10-8228-3

  1.  

Jul. 17.

Kumar V., Mehra R., Majumder D., Khanna S., Prasad S., Islam A. (2018), “Process and Voltage Variation-Aware Design and Analysis of Active Grounded Inductor-Based Bandpass Filter”, In: Sa P., Sahoo M., Murugappan M., Wu Y., Majhi B. (eds) Book subtitle: Progress in Intelligent Computing Techniques: Theory, Practice, and Applications. Series Title: Advances in Intelligent Systems and Computing, vol. 518, pp. 309-315, 13 July 2017. Print ISBN: 978-981-10-3372-8, Online ISBN: 978-981-10-3373-5, Publisher: Springer, Singapore, eBook chapter,

 https://doi.org/10.1007/978-981-10-3373-5_31, https://link.springer.com/book/10.1007/978-981-10-3373-5

  1.  

Nov. 16

Sarita Kumari, Rishab Mehra, Amit Krishna Dwivedi, Aminul Islam, "Estimation of MOS Capacitance Across Different Technology Nodes," one chapter contributed to the book subtitled "Proceedings of the First International Conference on Intelligent Computing and Communication" pp. 297-306, Copyright: 2017, Print ISBN: 978-981-10-2034-6, Online ISBN: 978-981-10-2035-3, Series Title:  Advances in Intelligent Systems and Computing, Series Volume: 458, Series ISSN: 2194-5357, Publisher: Springer Singapore, Copyright Holder: Springer Science+Business Media Singapore, Editors:  Jyotsna Kumar Mandal, Suresh Chandra Satapathy, Manas Kumar Sanyal, Vikrant Bhateja, Series Editor: Janusz Kacprzyk, DOI: 10.1007/978-981-10-2035-3_30, Date of Publication: 23 November 2016. http://link.springer.com/chapter/10.1007/978-981-10-2035-3_30, https://link.springer.com/book/10.1007/978-981-10-2035-3, https://doi.org/10.1007/978-981-10-2035-3_30  

  1.  

Nov. 16

Rishab Mehra, Sarita Kumari, Aminul Islam, "Cross-Coupled Dynamic CMOS Latches: Scalability Analysis," one chapter contributed to the book subtitled "Proceedings of the First International Conference on Intelligent Computing and Communication" pp. 307-315, Copyright: 2017, Print ISBN: 978-981-10-2034-6, Online ISBN: 978-981-10-2035-3, Series Title:  Advances in Intelligent Systems and Computing, Series Volume: 458, Series ISSN: 2194-5357, Publisher: Springer Singapore, Copyright Holder: Springer Science+Business Media Singapore, Editors:  Jyotsna Kumar Mandal, Suresh Chandra Satapathy, Manas Kumar Sanyal, Vikrant Bhateja, Series Editor: Janusz Kacprzyk, DOI: 10.1007/978-981-10-2035-3_31, Date of Publication: 23 November 2016, http://link.springer.com/chapter/10.1007/978-981-10-2035-3_31, https://link.springer.com/book/10.1007/978-981-10-2035-3, https://doi.org/10.1007/978-981-10-2035-3_31  

  1.  

Nov. 16

Rishab Mehra, Swapnil Sourav, Aminul Islam, "Cross-Coupled Dynamic CMOS Latches: Robustness Study of Timing," one chapter contributed to the book subtitled "Proceedings of the First International Conference on Intelligent Computing and Communication" pp. 317-325, Copyright: 2017, Print ISBN: 978-981-10-2034-6, Online ISBN: 978-981-10-2035-3, Series Title:  Advances in Intelligent Systems and Computing, Series Volume: 458, Series ISSN: 2194-5357, Publisher: Springer Singapore, Copyright Holder: Springer Science+Business Media Singapore, Editors:  Jyotsna Kumar Mandal, Suresh Chandra Satapathy, Manas Kumar Sanyal, Vikrant Bhateja, Series Editor: Janusz Kacprzyk, DOI: 10.1007/978-981-10-2035-3_32, Date of Publication: 23 November 2016, http://link.springer.com/chapter/10.1007/978-981-10-2035-3_32, https://link.springer.com/book/10.1007/978-981-10-2035-3, https://doi.org/10.1007/978-981-10-2035-3_32  

  1.  

Feb. 16

N. S. Ranjan, Soumitra Pal, Aminul Islam, "Design of a Low-delay-write Model of a TMCAM," one chapter contributed to the book entitled "Information Systems Design and Intelligent Applications", book subtitled "Proceedings of Third International Conference INDIA 2016, Volume 3" pp. 41-47, Copyright: 2016, Print ISBN: 978-81-322-2756-4, Online ISBN: 978-81-322-2757-1, Series Title:  Advances in Intelligent Systems and Computing, Series Volume: 435, Series ISSN: 2194-5357, Publisher: Springer India, Copyright Holder: Springer India, Editors:  Suresh Chandra Satapathy, Jyotsna Kumar Mandal, Siba K. Udgata, Vikrant Bhateja,  Series Editor: Janusz Kacprzyk, DOI: 10.1007/978-81-322-2757-1_5, Date of Publication: 06 Feb. 2016,  http://link.springer.com/chapter/10.1007/978-81-322-2757-1_5, https://link.springer.com/book/10.1007/978-81-322-2757-1, https://doi.org/10.1007/978-81-322-2757-1_5 

  1.  

Feb. 16

Krishna Kumar, Pratyush Dwivedi, Aminul Islam, “Study and Analysis of Subthreshold Leakage Current in Sub-65 nm NMOSFET," one chapter contributed to the book entitled "Information Systems Design and Intelligent Applications", book subtitled "Proceedings of Third International Conference INDIA 2016, Volume 1" pp. 1-10, Copyright: 2016, Print ISBN: 978-81-322-2753-3, Online ISBN: 978-81-322-2755-7, Series Title:  Advances in Intelligent Systems and Computing, Series Volume: 433, Series ISSN: 2194-5357, Publisher: Springer India, Copyright Holder: Springer India, Editors:  Suresh Chandra Satapathy, Jyotsna Kumar Mandal, Siba K. Udgata, Vikrant Bhateja,  Series Editor: Janusz Kacprzyk, DOI: 10.1007/978-81-322-2755-7_1, Date of Publication: 06 Feb. 2016, http://link.springer.com/chapter/10.1007/978-81-322-2755-7_1, https://link.springer.com/book/10.1007/978-81-322-2755-7, https://doi.org/10.1007/978-81-322-2755-7_1  

  1.  

Sep. 15

Soumitra Pal, Y. Krishna Madan, Aminul Islam, "Low-Leakage, Low-Power, High-Stable SRAM Cell Design", one chapter contributed to the book entitled "Proceedings of the 2nd International Conference on Computer and Communication Technologies", 24-26 July 2015, book subtitled: IC3T 2015, Volume 1, pp. 549 – 556, Copyright: 2016, Print ISBN: 978-81-322-2516-4, Online ISBN: 978-81-322-2517-1, Series Title: Advances in Intelligent Systems and Computing, Series Volume: 379, Series ISSN: 2194-5357, Publisher: Springer India, Copyright Holder: Springer India, Editors:  Suresh Chandra Satapathy, K. Srujan Raju, Jyotsna Kumar Mandal, Vikrant Bhateja,  Series Editor: Janusz Kacprzyk, DOI: 10.1007/978-81-322-2517-1_53, Date of Publication: 05 Sep. 2015 https://doi.org/10.1007/978-81-322-2517-1_53, http://link.springer.com/chapter/10.1007%2F978-81-322-2517-1_53, http://www.springer.com/in/book/9788132225164, https://link.springer.com/book/10.1007/978-81-322-2517-1?page=3#toc

  1.  

Sep. 15

Amit Krishna Dwivedi, Manisha Guduri, Rishab Mehra, Aminul Islam, "A Monotonic Digitally Controlled Delay Element Based Programmable Trigger Pulse Generator", one chapter contributed to the book entitled "Proceedings of the 2nd International Conference on Computer and Communication Technologies", 24-26 July 2015, book subtitled: IC3T 2015, Volume 1, pp. 365 – 374, Copyright: 2016, Print ISBN: 978-81-322-2516-4, Online ISBN: 978-81-322-2517-1, Series Title: Advances in Intelligent Systems and Computing, Series Volume: 379, Series ISSN: 2194-5357, Publisher: Springer India, Copyright Holder: Springer India, Editors:  Suresh Chandra Satapathy, K. Srujan Raju, Jyotsna Kumar Mandal, Vikrant Bhateja,  Series Editor: Janusz Kacprzyk, DOI: 10.1007/978-81-322-2517-1_36, Date of Publication: 05 Sep. 2015, http://link.springer.com/chapter/10.1007%2F978-81-322-2517-1_36, http://www.springer.com/in/book/9788132225164, https://doi.org/10.1007/978-81-322-2517-1_36  

  1.  

Feb. 15

Amit Krishna Dwivedi, Anubhav Sinha, Aminul Islam, "Design of a Signal Sensor for analyzing Biological Activities at Cellular Level", one chapter contributed to the book entitled "Intelligent Computing and Applications", book subtitled "Proceedings of the International Conference on ICA", 22-24 December 2014, pp. 405-412, Copyright: 2015, Series Title: Advances in Intelligent Systems and Computing, Series Volume: 343, Series ISSN: 2194-5357, Publisher: Springer India, Copyright Holder: Springer India, Editors: Durbadal Mandal, Rajib Kar, Swagatam Das, Bijaya Ketan Panigrahi, Series Editor: Janusz Kacprzyk, DOI: 10.1007/978-81-322-2268-2_42, Print ISBN: 978-81-322-2267-5, Online ISBN: 978-81-322-2268-2, Date of Publication: 24 Feb. 2015, https://doi.org/10.1007/978-81-322-2268-2_42 , http://link.springer.com/chapter/10.1007%2F978-81-322-2268-2_42, https://link.springer.com/book/10.1007/978-81-322-2268-2?page=3#toc

  1.  

Sep. 10

A. Islam, Mohd. Hasan, "High Speed Cache Design Using Multi-Diameter CNFET at 32nm Technology", one chapter contributed to the book entitled "Information and Communication Technologies", book subtitled "International Conference, ICT 2010", Sep. 7-9, 2010. pp. 215-222, Copyright: 2010, Print ISBN: 978-3-642-15765-3, Online ISBN: 978-3-642-15766-0, Series Title: Communications in Computer and Information Science, Series Volume: 101, Series ISSN: 1865-0929, Publisher: Springer Berlin Heidelberg, Copyright Holder: Springer-Verlag Berlin Heidelberg, Editors:  Venu V. Das, R. Vijay Kumar, DOI: 10.1007/978-3-642-15766-0_31, https://link.springer.com/book/10.1007/978-3-642-15766-0?page=2#toc, http://link.springer.com/chapter/10.1007/978-3-642-15766-0_31, https://doi.org/10.1007/978-3-642-15766-0_31

 

 

 

 

BOOK (EDITED)

Sl. No.

Year of Publication

Title of the book, subtitle of the book, editors,  Series Title, DOI, Publisher, Hardcover ISBN, Softcover ISBN, eBook ISBN, Series ISSN, Series E-ISSN, Edition Number, Number of Pages

  1.  

27 June 23

Book Title: Microelectronics, Circuits and Systems; Book Subtitle: Select Proceedings of Micro2021; Editors: Abhijit Biswas, Aminul Islam, Rishu Chaujar, Olga Jaksic; Series Title: Lecture Notes in Electrical Engineering; DOI: https://doi.org/10.1007/978-981-99-0412-9; Publisher: Springer Singapore; Hardcover ISBN: 978-981-99-0411-2, Published on: 27 June 2023; Softcover ISBN: 978-981-99-0414-3, Due on 28 July 2023; eBook ISBN: 978-981-99-0412-9, Published on 26 June 2023; Series ISSN: 1876-1100; Series E-ISSN: 1876-1119; Edition Number: 1; Number of Pages: XIII, 579.

 

 

Intellectual Property Rights (IPR)

Patents (Applied/Published/Granted)  

S.

No. 

Name of the Inventor 

Title of the 

Invention 

Filing date

Application / Patent No.

Publication date

Date of Grant  

Short Description about the patent

1

Islam, A. Dubey, S.K., Mishra, M

AlGaN/GaN based HEMT for RF and Low Noise Application

10/06/2021

202141025986 A/ 511487

03/12/2021

Granted on 16/02/2024

Disclosed is an AlGaN/GaN based HEMT (100) for RF and low noise application, which includes a Silicon Carbide (6-H SiC) substrate (102). The Gallium Nitride channel layer (104) is placed at the top of the Silicon Carbide substrate (102). Furthermore, the AlGaN barrier layer (106) is placed above the gallium nitride channel layer (104) and between two n+ wells. Additionaly, the n-GaN cap layer (108) is placed above the AlGaN barrier layer (106). Furthermore, the gate terminal (114) is embedded at the middle of the n-GaN cap layer (108) and between the source terminal (112) and the drain terminal (116).

2

Aminul Islam, S. S. Solanki, Maherukh

Design of Embedded Radiation Hardened Cache Memory Cell

10/06/2021

202141025985 A

03/12/2021

-

Disclosed is a cache memory cell circuit 100, which includes two PMOS access transistors (P8 and P9) which is connected to the word line (WL). A word line (WL) is further connected to VDD. The PMOS access transistors (P8 and P9) are directly controlled by the word line. The PMOS access transistors P8 and P9 are further connected with the world lines BL and BLB respectively. Plurality of NMOS transistors (N0, N1, N2 and N3) are connected to the nodes Q and QB. Furthermore, the PMOS access transistors P8 and P9 are connected with the storage nodes QB and Q respectively. Two redundant nodes, S0 and S1 located at the drain of P1 and P3 transistors respectively. Plurality of PMOS transistors (P0, P1, P2, P3, P4, P5, P6 and P7) are interconnected to VDD, two PMOS access transistors P8 and P9, WL, bit lines, storage nodes (Q and QB) and plurality of redundant nodes (S1 and S0).

3

Munaganuri Vishnuvardhan, Dr. Manisha Guduri, Dr. Aminul Islam, Dr. Amit Krishna Dwivedi

13.9 Tera Hertz Resonant Tunneling Diode Based Oscillator.

28/11/2022

202241068436 A/ 573139

 

03/02/2023

 

 

Granted on 31/10/2025

13.9 Tera Hertz Resonant Tunneling Diode Based Oscillator A RTD based oscillator circuit with an output frequency of 13.9 THz, with a supply voltage of 0.5 V, the current drawn from the supply source is 6.84 mA giving rise to consumed power by the proposed RTD-based oscillator circuit is 3.42 mW. The present oscillator circuit produces the stable frequency of oscillations with the predetermined arrangement of the components (resistors, capacitors, RTD, inductor) at the room temperature of 25?C.

4

Dr. Aminul Islam, Shashank Kumar Dubey, Meena Mishra

A High Electron Mobility Transistor and A Method of Manufacturing Thereof

08/12/2022

202211070869

14/06/2024

Granted on 20/02/2026

This research work is based on the study and analysis of Al0.30Ga0.70N/GaN based HEMT for RF applications. DC, RF and Noise parameters have been discussed in detail for the proposed device. Al0.30Ga0.70N/GaN based HEMT having T-shaped gate exhibits good DC, RF and Noise parameters. DC parameters including maximum drain current (IDMAX), threshold voltage (Vt) and transconductance (gm) have been analysed with good results. The simulated value of IDMAX is 808 mA/mm at VGS = 0 V, Vt is −0.957 V and gm is 741 mS/mm. RF parameters including cut off frequency (fT) and maximum oscillation frequency (fMAX) have been simulated and the observed values are suitable for RF applications. The observed value of fT is 100 GHz and fMAX is 147 GHz. Noise parameters including minimum noise figure (NFMIN), noise resistance (Rn) and optimum reflection coefficient (?OPT) have been discussed in detail for low noise applications such as low noise amplifier (LNA). All the observed values of noise parameters are lying in the acceptable range for low noise applications. All the noise parameters simulation has been done in the frequency range from 10 GHz to 100 GHz which covers the Ku, K, Ka, V and W bands (described in IEEE standard) of Radio Frequency (RF). All the simulated and observed values of DC, RF and Noise parameters are verified using Silvaco TCAD tool.

 

Fellow