Birla Institute of Technology, Mesra
Faculty Image

Santashraya Prasad

Joined Institute on : 2-Nov-2008

  • Assistant Professor
  • Electronics and Communication Engg
  • Ph.D(In Device Modeling),M.E,BE
Contact Address

Dr.Santashraya Prasad, Assistant Professor, Department of Electronics and Communication Engineering , Birla Institute of Technology, Mesra, Ranchi,835215

Dr.Santashraya Prasad, S/O Dr. S .A Prasad .Ex-Speaker House-B(Campus),Nayatola, Muzaffarpur, Bihar,842001

  • Phone Office - 08340185216
  • Phone Residence - 08340185216
  • Email - s.prashad@bitmesra.ac.in
Work Experience

Teaching : 14 Years

Research : 12 Years

Individual: 8 Years
Professional Background

Creative and Analytical approach to work. Ph.D in the field of Device modeling and Post Graduate(M.E)  from B.I.T,Mesra. A quick learner and has ability to work on various technologies. Joined B.I.T on 1-11-2008 and is working on faculty position . Have work experience of 2.5 years in Industry ,worked on Microprocessor based companies and embedded system.
Research Areas
  • Nanoscale Device modelling
  • Rf device Modelling 
Publications

International Journal

  1.  Santashraya Prasad and Aminul Islam "Y-shaped double-gate high electron mobility transistor for radio frequency applications", 2022, ISSN: 1753-2507, eISSN: 1753-2515, pp. l8I-20l, International Journal of Nanoparticles, vol.14, pp.No.2-4, https://doi.org/ I0.1504/UNP.2022.126356.
  1. Santashraya Prasad and Aminul Islam, "Characterization of AllnN/GaN Based HEMT for Radiofrequency Applications" in Micro and Nanosystems, vol. 15, May 2022. Publisher: Bentham Science Publishers B.V. DOI: 10.2174/l 876402914666220510112625.
  1. Pratik Kumar Singh, Rohit Raj, Vivek Kumar, Monalisa Pandey, Santashraya Prasad and Aminul Islam, "Comparative Analysis and Robustness Study of Logic Styles," in Microsystem Technologies-Micro-and Nano systems- information Storage and Processing Systems. Publisher: Springer. Oct 2022, vo1.28 (7), pp.1-14, DOI: http1, ://doi.org/10. 1007/s00542-022-05378-6.
  1. V. Karthik Reddy, Manisha Guduri, N Lakshmi Dheshik Reddy, Peddi Dharani, Santashraya Prasad, A. Islam, "Threshold Voltage Extraction of 220 nm FDSOI Device Using Linear Extrapolation Method," in Indian Journal of Science and Technology, vol. 9, no. 40, pp. 1-4, Oct. 2016. DOI: 10.17485/ijst/2016/v9i40/99511, Publisher: Indian Society for Education and Environment. http://www.indjst.org/index.php/indjst/article/view/99511.
  1. Shrey Khanna, Debosmit Majumder, Vikash Kumar, Santashraya Prasad, Aminul Islam, "Impact of Temperature Variation on Resonant Frequency of Active Grounded Inductor Based Bandpass Filter,” in Indian Journal of Science and Technology, vol. 9, no. 33, pp. 1-4, Sep. 2016. DOI: 10.17485/ijst/2016/v9i33/99505, Publisher: Indian Society for Education and Environment. http://www.indjst.org/index.php/indjst/article/view/99505.
  1. Prasad, S., Dwivedi, A.K. & Islam, A. Characterization of AlGaN/GaN and AlGaN/AlN/GaN HEMTs in terms of mobility and subthreshold slope. J Comput Electron 15, 172–180 (2016). https://doi.org/10.1007/s10825-015-0751-8.

Conference

  1. J. P. Kotni, M. Pandey, S. Prasad and A. Islam, "Radiation-Hardened Low Read Delay 12T-SRAM Cell for Space Applications," 2021 Devices for Integrated Circuit (DevIC), 19-20 May 2021, pp. 512-516,doi:10.1109/DevIC50843.2021.9455796.https://doi.org/10.1109/DevIC50843.2021.9455796.
  2. S. Singha, A. S. Singh, S. Prasad and A. Alam, "A Study on Power Optimization Techniques in PSoC," 2019 International Conference on Communication and Signal Processing (ICCSP), 2019, pp. 0225-0229, doi: 10.1109/ICCSP.2019.8698070,2019.
  3. Ashish Kumar, Pinki Kumari, Priya Murmu, Santashraya Prasad, A. Islam, "Indium Phosphide based High Electron Mobility Transistor," 5th International Conference on Microelectronics, Circuits and Systems (Micro2018), Bhubaneswar, Odisha, India, 19-20 May 2018, vol. 2, pp. 10-13.
  4. Sesha Sree, Rashmi Virupaksha, Rishav Raj, Santashraya Prasad, Manisha Guduri, A. Islam, "Characterization of AlInN and GaN Based HEMT on SiC Using AlN as Interfacial Spacer Layer and Si3N4 Passivation Layer," 5th International Conference on Microelectronics, Circuits and Systems (Micro2018), Bhubaneswar, Odisha, India, 19-20 May 2018, vol. 2, pp. 118-123.
  5. Pinki Kumari, Priya Murmu, Ashish Kumar, Shashank Kumar Dubey, Santashraya Prasad and A. Islam, "Influence of AlN spacer layer on SiN-passivated AlGaN/GaN HEMT," 5th International Conference on Microelectronics, Circuits and Systems (Micro2018), Bhubaneswar, Odisha, India, 19-20 May 2018, vol. 1, pp. 54-58.
  6. Priya Murmu, Pinki Kumari, Ashish Kumar, Shashank Kumar Dubey, Santashraya Prasad and A. Islam, "Investigation on characteristic properties of AlGaN/GaN HEMT using Sapphire, Si and SiC substrate materials," 5th International Conference on Microelectronics, Circuits and Systems (Micro2018), Bhubaneswar, Odisha, India, 19-20 May 2018, vol. 1, pp. 104-108.
  7. S. Prasad, M. Guduri and A. Islam, "High breakdown (958 V) low threshold GaN HEMT," 2017 International Conference on Multimedia, Signal Processing and Communication Technologies (IMPACT), Aligarh, 24-26 Nov. 2017, pp. 94-96. doi: 10.1109/MSPCT.2017.8363981. https://doi.org/10.1109/MSPCT.2017.8363981.
  8. N. S. Ranjan, Arko Mukherjee, Harshit Sinha, Santashraya Prasad, Aminul Islam, "Optimal Design of Nonvolatile CAM Cell with Magnetic Tunnel Junction," in 4th International Conference on Microelectronics, Circuits and Systems (Micro2017), Darjeeling, India, 3-4 Jun. 2017, vol. 2, pp. 82-86.
  9. A. Chitransh, S. Moonka, A. Priya, S. Prasad, A. Sengupta and A. Islam, "Analysis of breakdown voltage of a field plated High Electron Mobility Transistor," 2017 Devices for Integrated Circuit (DevIC), Kalyani, India, 2017, pp. 167-169. doi: 10.1109/DEVIC.2017.8073929, https://doi.org/10.1109/DEVIC.2017.8073929.
  10. S. Moonka, A. Priya, A. Chitransh, S. Prasad, A. Sengupta and A. Islam, "Analysis of Al0.22Ga0.78As/In0.18Ga0.82As/GaAs Pseudomorphic HEMT device with higher conductivity," 2017 Devices for Integrated Circuit (DevIC), Kalyani, India, 2017, pp. 360-363. doi: 10.1109/DEVIC.2017.8073969, https://doi.org/10.1109/DEVIC.2017.8073969.
  11. A. Priya, S. Moonka, A. Chitransh, S. Prasad, A. Sengupta and A. Islam, "Development of HEMT device with surface passivation for a low leakage current and steep subthreshold slope," 2017 Devices for Integrated Circuit (DevIC), Kalyani, India, 2017, pp. 364-367. doi: 10.1109/DEVIC.2017.8073970, https://doi.org/10.1109/DEVIC.2017.8073970.
  12. V. Karthik Reddy, M. Guduri, N. Lakshmi Dheshik Reddy, P. Dharani, S. Prasad, A. Islam, ''Threshold Voltage Extraction of 220 nm FDSOI Device Using Linear Extrapolation Method," in Indian Society for Education and Environment, vol.9, no.40, pp. L-4, Oct.2016. doi:10.17485/ijst/2016/v9i40/99511.
  13. Pallavi Roy, Surbhi Jawanpuria, Vismita, Santashraya Prasad, Aminul Islam, “Characterization of AlGaN and GaN Based HEMT With AlN Interfacial Spacer,” in IEEE International conference on Communication Systems and Network Technologies (CSNT-2015), Gwalior, India, April 4–6, 2015, pp. 786 – 788, DOI: 10.1109/CSNT.2015.103, http://dx.doi.org/10.1109/CSNT.2015.103.
  14. Mohd. Ajmal Kafeel, Mohd. Hasan, Mohd. Shah Alam, A. Kumar, S. Prasad, A. Islam, “Performance evaluation of CNFET based operational amplifier at technology node beyond 45-nm,” in IEEE Annual India Conference (INDICON), IIT, Bombay, India, December 13-15, 2013, pp. 1 – 5. DOI: 10.1109/INDCON.2013.6725973, http://dx.doi.org/10.1109/INDCON.2013.6725973.
  15. S. Kushwaha, S. Prasad, A. Islam, “Variation Mitigation Technique in SRAM Cell using Adaptive Body Bias,” in IEEE International Conference on Communications, Devices, and Intelligent Systems (CODIS), Jadavpur University, Kolkata, India, December 28-29, 2012, pp. 117 – 120. DOI: 10.1109/CODIS.2012.6422150, http://dx.doi.org/10.1109/CODIS.2012.6422150.

National Conference:

  1. A. Kumar, S. Prasad, A. Islam, “Realization and Optimization of CNFET Based Operational Amplifier at 32-nm Technology Node,” in International Conclave 2013," in Innovations in Engineering & Management” (ICIEM 2013), BIT, Patna, India, February 22-23, 2013.

Book Chapter

  1. Kumar V., Mehra R., Majumder D., Khanna S., Prasad S., Islam A. (2018) Process and Voltage Variation-Aware Design and Analysis of Active Grounded Inductor-Based Bandpass Filter. In: Sa P., Sahoo M., Murugappan M., Wu Y., Majhi B. (eds) Progress in Intelligent Computing Techniques: Theory, Practice, and Applications. Advances in Intelligent Systems and Computing, vol. 518, pp. 309-315, 13 July 2017. Print ISBN: 978-981-10-3372-8, Online ISBN: 978- 981-10-3373-5, Publisher: Springer, Singapore, eBook chapter, https://doi.org/10.1007/978-981-10-3373-5_31