Birla Institute of Technology, Mesra
Santashraya Prasad
Assistant Professor, Electronics and Communication Engg
Master of Engineering
Contact Address
Permanent Address Santashraya Prasad, S/O Dr. S .A Prasad Ex-Speaker House-B,Nayatola, Muzaffarpur, Bihar,842001
Local Address Santashraya Prasad, Assistant Professor, Department of Electronics Engineering Birla Institute of Technology, Mesra, Ranchi,835215
Phone (Office) 9934583162
Phone Residence 9934275802
Email Id
Joined Institute on : 1-Nov-2008
  Work Experience
Teaching : 8 Years

Research : 3 Years

Individual: 8 Years

  Professional Background

Creative and Analytical approach to work. A Post Graduate in Microwave engg. from B.I.T,Mesra. A quick learner and has ability to work on various technologies. Joined B.I.T on 1-11-2008 and is working on faculty position along with the PhD in the field of Device modeling using TCAD. Have work experience of 2.5 years in Industry ,worked on Microprocessor based companies and embedded system.

  Research Areas
  • Nanoscale Device modelling

 Publication in SCI /SSCI   journals 

  1. Shrey Khanna Debosmit Majumder Vikash Kumar Santashraya Prasad Aminul Islam “Impact of Temperature Variation on Resonant Frequency of Active Grounded Inductor-based Bandpass Filter”,Indian Journal of Science and Technology, ISSN (Print) : 0974-6846(Online) : 0974-5645,(sept-2016).
  2. Santashraya Preasad, Amit Krishna Triwadi, “Characterization of AlGaN/GaN and AlGaN/AlN/GaN HEMTs in Terms of Mobility and Subthreshold Slope”, Journal of Computational Electronics, Spinger, 1572-8137, 24-Sept.2015.

BOOK Chapter:

  1. Vikash Kumar, Rishab Mehra, Debosmit Majumder, Shrey Khanna, Santashraya Prasad and Aminul Islam, “Process and Voltage Variation-Aware Design and Analysis of Active Grounded Inductor-Based  Bandpass Filter” Progress in Intelligent Computing Techniques: Theory,Practice, and Applications, Advances in Intelligent Systems and Computing 518,DOI 10.1007/978-981-10-3373-5_31(2016).

Conference Papers:

  1. Santashraya Prasad, Manisha Guduri and Aminul Islam"Low Noise High Breakdown AlGaN/AlN/GaN Field Plated HEMT" ,IEEE conference on Multimedia, Signal Processing and Communication Technologies (IMPACT 2017), Aligarh Muslim University (AMU),November,24- 26 ,2017.
  2. Shreya Moonka, Anushruti Priya, Akshat Chitransh, Santashraya Prasad, Anumita Sengupta, Aminul Islam “Analysis of Al0.22Ga0.78As /In0.18Ga0.82As/GaAs Pseudomorphic HEMT Device with Higher Conductivity”, DevIC 2017 ,IEEE Conference, Kalyani Govt. Engg. Colleg ,pp. 360 – 363, 23-24 March, 2017.
  3.  Anushruti Priya, Shreya Moonka, Akshat Chitransh, Santashraya Prasad, Anumita Sengupta, Aminul Islam  “Development of HEMT Device with Surface Passivation for a Low Leakage Current and Steep Subthreshold Slope DevIC 2017 ,IEEE Conference, Kalyani Govt. Engg. Colleg pp. 364 – 367,23-24 March, 2017.
  4.  Akshat Chitransh, Shreya Moonka, Anushruti Priya, Santashraya Prasad, Anumita Sengupta, Aminul Islam  “Analysis of Breakdown Voltage of a Field Plated High Electron Mobility Transistor”, ”, DevIC 2017 ,IEEE Conference,  Kalyani Govt. Engg.Colleg ,pp.167 – 169 ,23-24 March, 2017.
  5. Pallavi Roy, Surbhi Jawanpuria, Vismita, Santashraya Prasad, Aminul Islam, “Characterization of AlGaN and GaN Based HEMT With AlN Interfacial Spacer”, IEEE International conference on Communication Systems and Network Technologies (CSNT-2015), pp. 786 – 788, April 4–6, 2015.
  6. Pulse Width Modulator Based On Second Generation Current Conveyor"Devices, Circuits and Commucication (ICDCCom),2014, 978-1-4799-1796-9.
  7. A Kumar, S. Prasad, A.Islam, “Realization and Optimization of CNFET Based Operational Amplifier at 32-nm Technology Node,” International Conclave 2013“Innovations in Engineering &Management”(ICIEM 2013), BIT, Patna, India,February 22-23, 2013.
  8. Kafeel, M.A. ; Hasan,M.; Alam, M.S. ; Kumar,A.;Prasad.S.;Islam.A“ Performance  evaluation of CNFET based operational amplifier at technology node beyond 45-nm”,, Conference (INDICON), 2013Annual IEEE, DOI: 10.1109/INDCON.2013.6725973 Publication Year: 2013 , Page(s): 1 – 5.